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SUB85N08-08-GE3-VB Product details
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1. **Product Introduction**
SUB85N08-08-GE3-VB is a unipolar N-channel power MOSFET in TO263 package. It adopts advanced Trench technology to provide efficient current transmission capability and low power loss. Its maximum drain-source voltage (VDS) is 80V, which is suitable for medium and low voltage power management systems, load switches, motor drives and other fields. The maximum drain current (ID) of this MOSFET is 120A, which can meet the needs of high current loads and is widely used in power electronic equipment that requires high performance and high reliability. The low on-resistance (RDS(ON)) of SUB85N08-08-GE3-VB further optimizes power efficiency, provides low switching losses and high load carrying capacity, and is particularly suitable for systems that require high current handling, such as battery management, power tools, inverters, etc.
SUB85N08-08-GE3-VB is a unipolar N-channel power MOSFET in TO263 package. It adopts advanced Trench technology to provide efficient current transmission capability and low power loss. Its maximum drain-source voltage (VDS) is 80V, which is suitable for medium and low voltage power management systems, load switches, motor drives and other fields. The maximum drain current (ID) of this MOSFET is 120A, which can meet the needs of high current loads and is widely used in power electronic equipment that requires high performance and high reliability. The low on-resistance (RDS(ON)) of SUB85N08-08-GE3-VB further optimizes power efficiency, provides low switching losses and high load carrying capacity, and is particularly suitable for systems that require high current handling, such as battery management, power tools, inverters, etc.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. **Detailed parameter description**
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 80V
- **Gate-source voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 10mΩ (at VGS = 4.5V)
- 6mΩ (at VGS = 10V)
- **Maximum drain current (ID)**: 120A
- **Technology**: Trench technology (Trench MOSFET)
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 80V
- **Gate-source voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 10mΩ (at VGS = 4.5V)
- 6mΩ (at VGS = 10V)
- **Maximum drain current (ID)**: 120A
- **Technology**: Trench technology (Trench MOSFET)
Domain and module applications：
3. **Application fields and module examples**
**1. Power management and load switch:**
SUB85N08-08-GE3-VB is widely used as a load switch in power management systems. Its low on-resistance and high current carrying capacity enable it to maintain high efficiency under high power load. In the battery management system (BMS), it can effectively control the charging and discharging process of the battery to prevent overcurrent or short circuit, thereby improving the safety and stability of the battery system. It is especially suitable for high current applications such as mobile devices, power tools, portable power supplies and electric vehicles.
**2. Motor drive and control:**
In the motor drive system, SUB85N08-08-GE3-VB is used as an N-channel MOSFET to drive the switch, especially for brushless DC motor (BLDC) control systems. Due to its high current carrying capacity (120A) and low on-resistance (RDS(ON) = 6mΩ), it can provide efficient motor drive performance, reduce energy loss and improve motor efficiency. In applications such as power tools, automation equipment, drones and electric scooters, it can provide efficient and stable motor control.
**3. Switching Power Supplies and DC-DC Converters: **
SUB85N08-08-GE3-VB is very suitable for switching power supplies (SMPS) and DC-DC converters, especially as a low-side switch. In these power converters, the low on-resistance and high current capability of this MOSFET enable higher conversion efficiency and lower energy loss. Whether it is used for LED driver power supply, DC-DC power adapter or power supply module, SUB85N08-08-GE3-VB can provide efficient power conversion.
**4. Battery Protection and Battery Charger: **
This MOSFET is suitable for battery protection circuits and battery chargers, and can provide precise current control during battery charging to prevent battery overcharge or over discharge. Due to its low RDS(ON) and high current handling capability, SUB85N08-08-GE3-VB can effectively protect batteries from damage, especially playing a key role in high-efficiency battery management systems, which are widely used in portable battery chargers, electric vehicles and energy storage systems.
**5. Power Conversion and Inverter Systems: **
In solar inverters and uninterruptible power supply (UPS) systems, SUB85N08-08-GE3-VB can be used for high-efficiency power conversion. The low on-resistance and high current carrying capacity of the MOSFET enable the device to provide stable power output and efficient energy conversion in the inverter, reducing system power loss and improving overall efficiency. This MOSFET is suitable for power management and conversion applications in solar power generation, wind power generation and other renewable energy systems.
**Summary**:
SUB85N08-08-GE3-VB is a high-efficiency, low-power loss N-channel MOSFET suitable for power management, battery protection, motor drive, power conversion and other fields. With its low on-resistance (6mΩ @ VGS = 10V), high current handling capability (120A) and advanced trench technology, it is able to provide stable operation in high-load circuits and is widely used in high-power applications such as power tools, electric vehicles, switching power supplies, battery management systems and inverters to help improve system performance and efficiency.
**1. Power management and load switch:**
SUB85N08-08-GE3-VB is widely used as a load switch in power management systems. Its low on-resistance and high current carrying capacity enable it to maintain high efficiency under high power load. In the battery management system (BMS), it can effectively control the charging and discharging process of the battery to prevent overcurrent or short circuit, thereby improving the safety and stability of the battery system. It is especially suitable for high current applications such as mobile devices, power tools, portable power supplies and electric vehicles.
**2. Motor drive and control:**
In the motor drive system, SUB85N08-08-GE3-VB is used as an N-channel MOSFET to drive the switch, especially for brushless DC motor (BLDC) control systems. Due to its high current carrying capacity (120A) and low on-resistance (RDS(ON) = 6mΩ), it can provide efficient motor drive performance, reduce energy loss and improve motor efficiency. In applications such as power tools, automation equipment, drones and electric scooters, it can provide efficient and stable motor control.
**3. Switching Power Supplies and DC-DC Converters: **
SUB85N08-08-GE3-VB is very suitable for switching power supplies (SMPS) and DC-DC converters, especially as a low-side switch. In these power converters, the low on-resistance and high current capability of this MOSFET enable higher conversion efficiency and lower energy loss. Whether it is used for LED driver power supply, DC-DC power adapter or power supply module, SUB85N08-08-GE3-VB can provide efficient power conversion.
**4. Battery Protection and Battery Charger: **
This MOSFET is suitable for battery protection circuits and battery chargers, and can provide precise current control during battery charging to prevent battery overcharge or over discharge. Due to its low RDS(ON) and high current handling capability, SUB85N08-08-GE3-VB can effectively protect batteries from damage, especially playing a key role in high-efficiency battery management systems, which are widely used in portable battery chargers, electric vehicles and energy storage systems.
**5. Power Conversion and Inverter Systems: **
In solar inverters and uninterruptible power supply (UPS) systems, SUB85N08-08-GE3-VB can be used for high-efficiency power conversion. The low on-resistance and high current carrying capacity of the MOSFET enable the device to provide stable power output and efficient energy conversion in the inverter, reducing system power loss and improving overall efficiency. This MOSFET is suitable for power management and conversion applications in solar power generation, wind power generation and other renewable energy systems.
**Summary**:
SUB85N08-08-GE3-VB is a high-efficiency, low-power loss N-channel MOSFET suitable for power management, battery protection, motor drive, power conversion and other fields. With its low on-resistance (6mΩ @ VGS = 10V), high current handling capability (120A) and advanced trench technology, it is able to provide stable operation in high-load circuits and is widely used in high-power applications such as power tools, electric vehicles, switching power supplies, battery management systems and inverters to help improve system performance and efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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