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SUB85N02-06-GE3-VB Product details
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Product Introduction
**SUB85N02-06-GE3-VB** is a **single N-channel** MOSFET in **TO263** package, designed for low voltage, high current applications, using advanced **Trench technology**, with low **RDS(ON)** and excellent switching performance. This model has a **VDS** of **20V**, a maximum drain current of **85A**, and provides extremely low on-resistance (6mΩ @ VGS=4.5V and 9mΩ @ VGS=2.5V). Its lower **Vth** (0.5V~1.5V) enables it to switch at a lower gate drive voltage, which is very suitable for applications that require fast switching, low power consumption and high efficiency. **SUB85N02-06-GE3-VB** can be widely used in low voltage power conversion, load switching, DC-DC converters and battery management.
**SUB85N02-06-GE3-VB** is a **single N-channel** MOSFET in **TO263** package, designed for low voltage, high current applications, using advanced **Trench technology**, with low **RDS(ON)** and excellent switching performance. This model has a **VDS** of **20V**, a maximum drain current of **85A**, and provides extremely low on-resistance (6mΩ @ VGS=4.5V and 9mΩ @ VGS=2.5V). Its lower **Vth** (0.5V~1.5V) enables it to switch at a lower gate drive voltage, which is very suitable for applications that require fast switching, low power consumption and high efficiency. **SUB85N02-06-GE3-VB** can be widely used in low voltage power conversion, load switching, DC-DC converters and battery management.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 20V | 0.5~1.5V | 85A | 9mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 20V | 0.5~1.5V | 85A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 20V | 0.5~1.5V | 85A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- 9mΩ @ VGS = 2.5V
- 6mΩ @ VGS = 4.5V
- **Maximum drain current (ID)**: 85A
- **Technology**: Trench technology
- **Operating temperature range**: Suitable for high-performance and low-power applications, and can operate stably in a wide range of working environments.
- **Package type**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- 9mΩ @ VGS = 2.5V
- 6mΩ @ VGS = 4.5V
- **Maximum drain current (ID)**: 85A
- **Technology**: Trench technology
- **Operating temperature range**: Suitable for high-performance and low-power applications, and can operate stably in a wide range of working environments.
Domain and module applications：
Application areas and module examples
1. **Low voltage DC-DC converter**: **SUB85N02-06-GE3-VB** is suitable for DC-DC converters in low voltage systems. Its low on-resistance and low gate threshold voltage (Vth) enable it to switch efficiently at a low gate drive voltage, especially suitable for low voltage conversion applications such as 5V and 12V, effectively reducing energy loss and improving conversion efficiency.
2. **Battery Management System (BMS)**: In battery management systems, **SUB85N02-06-GE3-VB** is an ideal choice, especially in applications that require fast and precise switching. Its low Vth and low **RDS(ON)** characteristics help optimize the battery charging and discharging process, ensuring high-efficiency and low-power battery management.
3. **Load Switch**: **SUB85N02-06-GE3-VB** can be used in various load switch applications, especially in low-power load control that requires a low gate drive voltage. Its fast switching capability and high current carrying capacity make it suitable for devices and systems that require precise control.
4. **Portable Power and Power Tools**: This MOSFET is particularly suitable for power tools, battery-driven devices, and portable power systems. Due to its low on-resistance and high current carrying capacity, it can reduce switching losses and provide higher efficiency, allowing the battery to continue working for a longer time.
5. **Smart Power Management**: **SUB85N02-06-GE3-VB** performs well in smart power management applications, especially in computer power supplies, mobile phone battery chargers, and other mobile devices. Its low Vth and low RDS(ON) characteristics enable it to reduce energy loss and improve system stability in high-efficiency power management.
6. **Electric Vehicles (EV) and Hybrid Electric Vehicles (HEV)**: In the battery and power conversion systems of electric vehicles and hybrid vehicles, **SUB85N02-06-GE3-VB** can be used as an efficient power switch to ensure efficient power conversion between the battery and the motor, and support fast battery charging and discharging.
Through its excellent low on-resistance, low gate threshold voltage and high current capability, **SUB85N02-06-GE3-VB** performs well in low-voltage, high-efficiency power and load management systems, suitable for a variety of high-efficiency applications, ensuring high efficiency and stability of the system.
1. **Low voltage DC-DC converter**: **SUB85N02-06-GE3-VB** is suitable for DC-DC converters in low voltage systems. Its low on-resistance and low gate threshold voltage (Vth) enable it to switch efficiently at a low gate drive voltage, especially suitable for low voltage conversion applications such as 5V and 12V, effectively reducing energy loss and improving conversion efficiency.
2. **Battery Management System (BMS)**: In battery management systems, **SUB85N02-06-GE3-VB** is an ideal choice, especially in applications that require fast and precise switching. Its low Vth and low **RDS(ON)** characteristics help optimize the battery charging and discharging process, ensuring high-efficiency and low-power battery management.
3. **Load Switch**: **SUB85N02-06-GE3-VB** can be used in various load switch applications, especially in low-power load control that requires a low gate drive voltage. Its fast switching capability and high current carrying capacity make it suitable for devices and systems that require precise control.
4. **Portable Power and Power Tools**: This MOSFET is particularly suitable for power tools, battery-driven devices, and portable power systems. Due to its low on-resistance and high current carrying capacity, it can reduce switching losses and provide higher efficiency, allowing the battery to continue working for a longer time.
5. **Smart Power Management**: **SUB85N02-06-GE3-VB** performs well in smart power management applications, especially in computer power supplies, mobile phone battery chargers, and other mobile devices. Its low Vth and low RDS(ON) characteristics enable it to reduce energy loss and improve system stability in high-efficiency power management.
6. **Electric Vehicles (EV) and Hybrid Electric Vehicles (HEV)**: In the battery and power conversion systems of electric vehicles and hybrid vehicles, **SUB85N02-06-GE3-VB** can be used as an efficient power switch to ensure efficient power conversion between the battery and the motor, and support fast battery charging and discharging.
Through its excellent low on-resistance, low gate threshold voltage and high current capability, **SUB85N02-06-GE3-VB** performs well in low-voltage, high-efficiency power and load management systems, suitable for a variety of high-efficiency applications, ensuring high efficiency and stability of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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