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SUB75P03-07-E3-VB Product details
Back to previous pageProduct introduction：
1. **Product Introduction**
SUB75P03-07-E3-VB is a unipolar P-channel power MOSFET in TO263 package, using advanced Trench technology. Its maximum drain-source voltage (VDS) is -30V, suitable for low-voltage and high-current power management and power conversion applications. This MOSFET has a low on-resistance (RDS(ON)), which is 8mΩ at VGS = 10V, which can reduce power loss and improve efficiency under high current loads. Its maximum drain current (ID) is -75A, suitable for circuits that require high current drive, such as battery management systems (BMS), power tools, motor drives, and switching power supplies. SUB75P03-07-E3-VB also has good thermal stability and electrical performance, suitable for use in high power density designs.
SUB75P03-07-E3-VB is a unipolar P-channel power MOSFET in TO263 package, using advanced Trench technology. Its maximum drain-source voltage (VDS) is -30V, suitable for low-voltage and high-current power management and power conversion applications. This MOSFET has a low on-resistance (RDS(ON)), which is 8mΩ at VGS = 10V, which can reduce power loss and improve efficiency under high current loads. Its maximum drain current (ID) is -75A, suitable for circuits that require high current drive, such as battery management systems (BMS), power tools, motor drives, and switching power supplies. SUB75P03-07-E3-VB also has good thermal stability and electrical performance, suitable for use in high power density designs.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -30V | -2.5V | -75A | 8mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -30V | -2.5V | -75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -30V | -2.5V | -75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P |
2. **Detailed parameter description**
- **Package**: TO263
- **Configuration**: Single-P-Channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Throw-on voltage (Vth)**: -2.5V
- **On-resistance (RDS(ON))**:
- 11mΩ (at VGS = 4.5V)
- 8mΩ (at VGS = 10V)
- **Maximum drain current (ID)**: -75A
- **Technology**: Trench technology (Trench MOSFET)
**Notes:**
- **VDS (drain-source voltage)**: This MOSFET The maximum drain-source voltage is -30V, which is suitable for low-voltage applications such as low-voltage power management, load switching, etc.
- **VGS (gate-source voltage)**: The maximum gate-source voltage is ±20V, supporting a variety of drive voltages to meet the needs of different control circuits.
- **RDS(ON) (on-resistance)**: It has a low on-resistance of 11mΩ (VGS = 4.5V) and 8mΩ (VGS = 10V), which effectively reduces conduction losses and improves overall system efficiency.
- **ID (drain current)**: The maximum drain current of this MOSFET is -75A, which can meet the needs of high current loads and is particularly suitable for high-power circuits.
- **Package**: TO263
- **Configuration**: Single-P-Channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Throw-on voltage (Vth)**: -2.5V
- **On-resistance (RDS(ON))**:
- 11mΩ (at VGS = 4.5V)
- 8mΩ (at VGS = 10V)
- **Maximum drain current (ID)**: -75A
- **Technology**: Trench technology (Trench MOSFET)
**Notes:**
- **VDS (drain-source voltage)**: This MOSFET The maximum drain-source voltage is -30V, which is suitable for low-voltage applications such as low-voltage power management, load switching, etc.
- **VGS (gate-source voltage)**: The maximum gate-source voltage is ±20V, supporting a variety of drive voltages to meet the needs of different control circuits.
- **RDS(ON) (on-resistance)**: It has a low on-resistance of 11mΩ (VGS = 4.5V) and 8mΩ (VGS = 10V), which effectively reduces conduction losses and improves overall system efficiency.
- **ID (drain current)**: The maximum drain current of this MOSFET is -75A, which can meet the needs of high current loads and is particularly suitable for high-power circuits.
Domain and module applications：
3. **Application fields and module examples**
**1. Power management and load switch:**
SUB75P03-07-E3-VB can be used as a load switch in power management systems, especially for controlling the battery charging and discharging process in battery management systems (BMS). Due to its low on-resistance and high current carrying capacity, it can effectively control the battery current and maintain low power loss under high current load, thereby improving the efficiency of the battery system. It is widely used in mobile devices, power tools and electric vehicles.
**2. Motor drive and control:**
In motor control systems, SUB75P03-07-E3-VB can be used as a P-channel MOSFET for the high-side switch of the motor, suitable for brushless DC motor (BLDC) drive and power tool drive. Due to its maximum drain current carrying capacity of 75A, it can work stably under high current load, suitable for various power tools, electric scooters and motor drives of household appliances.
**3. Switching Power Supplies and DC-DC Converters: **
This MOSFET is suitable for switching power supplies (SMPS) and DC-DC converters, especially when used as a high-side switch in these power systems. Its low RDS(ON) can effectively reduce switching losses and improve power conversion efficiency. SUB75P03-07-E3-VB is particularly suitable for applications such as high-frequency power converters, LED driver power supplies, and portable battery chargers.
**4. Battery Protection and Chargers: **
SUB75P03-07-E3-VB also plays an important role in battery protection circuits and chargers. P-channel MOSFET can effectively control the charging and discharging process of the battery, prevent battery overcurrent, short circuit and other problems, and improve system stability. Especially in battery management systems in electric vehicles, portable devices and renewable energy storage systems, it can ensure the safe and efficient operation of the battery.
**5. Power Conversion and Inverter Systems: **
SUB75P03-07-E3-VB is suitable for various power conversion systems, such as solar inverters and UPS (uninterruptible power supply) systems. In these applications, MOSFETs can provide efficient power conversion and ensure stable operation of the system under high current and high load conditions. Its low on-resistance helps to improve the overall power conversion efficiency and reduce energy waste.
**Summary**:
SUB75P03-07-E3-VB is a high-efficiency, low-power loss P-channel power MOSFET suitable for power management, battery protection, motor drive, power conversion and other fields. With its low on-resistance, strong current carrying capacity and high efficiency performance, it can provide stable and efficient operation in high-load circuits, and is widely used in high-power application scenarios such as power tools, battery management, switching power supplies and electric vehicles.
**1. Power management and load switch:**
SUB75P03-07-E3-VB can be used as a load switch in power management systems, especially for controlling the battery charging and discharging process in battery management systems (BMS). Due to its low on-resistance and high current carrying capacity, it can effectively control the battery current and maintain low power loss under high current load, thereby improving the efficiency of the battery system. It is widely used in mobile devices, power tools and electric vehicles.
**2. Motor drive and control:**
In motor control systems, SUB75P03-07-E3-VB can be used as a P-channel MOSFET for the high-side switch of the motor, suitable for brushless DC motor (BLDC) drive and power tool drive. Due to its maximum drain current carrying capacity of 75A, it can work stably under high current load, suitable for various power tools, electric scooters and motor drives of household appliances.
**3. Switching Power Supplies and DC-DC Converters: **
This MOSFET is suitable for switching power supplies (SMPS) and DC-DC converters, especially when used as a high-side switch in these power systems. Its low RDS(ON) can effectively reduce switching losses and improve power conversion efficiency. SUB75P03-07-E3-VB is particularly suitable for applications such as high-frequency power converters, LED driver power supplies, and portable battery chargers.
**4. Battery Protection and Chargers: **
SUB75P03-07-E3-VB also plays an important role in battery protection circuits and chargers. P-channel MOSFET can effectively control the charging and discharging process of the battery, prevent battery overcurrent, short circuit and other problems, and improve system stability. Especially in battery management systems in electric vehicles, portable devices and renewable energy storage systems, it can ensure the safe and efficient operation of the battery.
**5. Power Conversion and Inverter Systems: **
SUB75P03-07-E3-VB is suitable for various power conversion systems, such as solar inverters and UPS (uninterruptible power supply) systems. In these applications, MOSFETs can provide efficient power conversion and ensure stable operation of the system under high current and high load conditions. Its low on-resistance helps to improve the overall power conversion efficiency and reduce energy waste.
**Summary**:
SUB75P03-07-E3-VB is a high-efficiency, low-power loss P-channel power MOSFET suitable for power management, battery protection, motor drive, power conversion and other fields. With its low on-resistance, strong current carrying capacity and high efficiency performance, it can provide stable and efficient operation in high-load circuits, and is widely used in high-power application scenarios such as power tools, battery management, switching power supplies and electric vehicles.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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