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SUB75N08-10-E3-VB Product details
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SUB75N08-10-E3-VB is a high-performance single N-Channel MOSFET in TO263 package, suitable for high current and high efficiency power electronics applications. It has a rated drain-source voltage of 80V and a maximum drain current of 120A. Based on advanced Trench technology, it has an ultra-low on-resistance (RDS(ON)). The low on-resistance of this MOSFET makes it particularly suitable for applications requiring high efficiency and low power loss. It can be widely used in power management, electric vehicle drive, industrial control, and high-power converters, and performs particularly well in high-efficiency DC-DC converters and battery management systems.
**
SUB75N08-10-E3-VB is a high-performance single N-Channel MOSFET in TO263 package, suitable for high current and high efficiency power electronics applications. It has a rated drain-source voltage of 80V and a maximum drain current of 120A. Based on advanced Trench technology, it has an ultra-low on-resistance (RDS(ON)). The low on-resistance of this MOSFET makes it particularly suitable for applications requiring high efficiency and low power loss. It can be widely used in power management, electric vehicle drive, industrial control, and high-power converters, and performs particularly well in high-efficiency DC-DC converters and battery management systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
：**
- **Package:** TO263
- **Configuration:** Single N-Channel
- **VDS (Drain-Source Voltage):** 80V
- **VGS (Gate-Source Voltage):** ±20V
- **Vth (Threshold Voltage):** 3V
- **RDS(ON) (On-Resistance):**
- 10mΩ @ VGS = 4.5V
- 6mΩ @ VGS = 10V
- **ID (Maximum Drain Current):** 120A
- **Technology Type:** Trench
- **Maximum Power Dissipation:** 150W
- **Operating Temperature Range:** -55°C to +150°C
**Application Examples:**
1. **Power Management and Converters:**
The low RDS(ON) characteristics of SUB75N08-10-E3-VB make it widely used in high-efficiency power conversion modules, especially in high-frequency DC-DC converters and power regulators. It can significantly reduce power loss and improve overall conversion efficiency, making it very suitable for communication equipment, data center power systems, and embedded power management units.
2. **Electric Vehicles (EV) and Battery Management Systems (BMS):**
This MOSFET can be used in the battery management system (BMS) of electric vehicles to achieve efficient current control of the battery pack. Its excellent conduction performance and high current handling capability ensure that electric vehicle batteries remain efficient and stable during charging and discharging, optimizing battery life and charging efficiency.
3. **Industrial Automation and Motor Drive:**
In industrial automation systems, SUB75N08-10-E3-VB can be used as an efficient switching element for motor drive systems. Its high current capability and low on-resistance enable it to provide fast response and low energy consumption in motor drive, transmission control and other high-power applications, improving the overall performance and efficiency of industrial equipment.
4. **Solar inverter and energy storage system:**
In solar inverter and energy storage system, this MOSFET provides high-efficiency energy conversion through low RDS(ON), ensuring that the system has lower heat loss during the conversion process, thereby improving the energy efficiency and stability of the system, and is particularly suitable for battery management modules of high-efficiency solar power generation and power storage systems.
- **Package:** TO263
- **Configuration:** Single N-Channel
- **VDS (Drain-Source Voltage):** 80V
- **VGS (Gate-Source Voltage):** ±20V
- **Vth (Threshold Voltage):** 3V
- **RDS(ON) (On-Resistance):**
- 10mΩ @ VGS = 4.5V
- 6mΩ @ VGS = 10V
- **ID (Maximum Drain Current):** 120A
- **Technology Type:** Trench
- **Maximum Power Dissipation:** 150W
- **Operating Temperature Range:** -55°C to +150°C
**Application Examples:**
1. **Power Management and Converters:**
The low RDS(ON) characteristics of SUB75N08-10-E3-VB make it widely used in high-efficiency power conversion modules, especially in high-frequency DC-DC converters and power regulators. It can significantly reduce power loss and improve overall conversion efficiency, making it very suitable for communication equipment, data center power systems, and embedded power management units.
2. **Electric Vehicles (EV) and Battery Management Systems (BMS):**
This MOSFET can be used in the battery management system (BMS) of electric vehicles to achieve efficient current control of the battery pack. Its excellent conduction performance and high current handling capability ensure that electric vehicle batteries remain efficient and stable during charging and discharging, optimizing battery life and charging efficiency.
3. **Industrial Automation and Motor Drive:**
In industrial automation systems, SUB75N08-10-E3-VB can be used as an efficient switching element for motor drive systems. Its high current capability and low on-resistance enable it to provide fast response and low energy consumption in motor drive, transmission control and other high-power applications, improving the overall performance and efficiency of industrial equipment.
4. **Solar inverter and energy storage system:**
In solar inverter and energy storage system, this MOSFET provides high-efficiency energy conversion through low RDS(ON), ensuring that the system has lower heat loss during the conversion process, thereby improving the energy efficiency and stability of the system, and is particularly suitable for battery management modules of high-efficiency solar power generation and power storage systems.
Domain and module applications：
Application Examples: **
1. **Power Management and Converters: **
The low RDS(ON) characteristics of SUB75N08-10-E3-VB make it widely used in high-efficiency power conversion modules, especially in high-frequency DC-DC converters and power regulators. It can significantly reduce power loss and improve overall conversion efficiency, making it very suitable for communication equipment, data center power systems, and embedded power management units.
2. **Electric Vehicles (EV) and Battery Management Systems (BMS): **
This MOSFET can be used in the battery management system (BMS) of electric vehicles to achieve efficient current control of the battery pack. Its excellent conduction performance and high current handling capability ensure that electric vehicle batteries remain efficient and stable during charging and discharging, optimizing battery life and charging efficiency.
3. **Industrial Automation and Motor Drive: **
In industrial automation systems, SUB75N08-10-E3-VB can be used as an efficient switching element for motor drive systems. Its high current capability and low on-resistance enable it to provide fast response and low energy consumption in motor drive, transmission control and other high-power applications, improving the overall performance and efficiency of industrial equipment.
4. **Solar inverter and energy storage system:**
In solar inverter and energy storage system, this MOSFET provides high-efficiency energy conversion through low RDS(ON), ensuring that the system has lower heat loss during the conversion process, thereby improving the energy efficiency and stability of the system, and is particularly suitable for battery management modules of high-efficiency solar power generation and power storage systems.
1. **Power Management and Converters: **
The low RDS(ON) characteristics of SUB75N08-10-E3-VB make it widely used in high-efficiency power conversion modules, especially in high-frequency DC-DC converters and power regulators. It can significantly reduce power loss and improve overall conversion efficiency, making it very suitable for communication equipment, data center power systems, and embedded power management units.
2. **Electric Vehicles (EV) and Battery Management Systems (BMS): **
This MOSFET can be used in the battery management system (BMS) of electric vehicles to achieve efficient current control of the battery pack. Its excellent conduction performance and high current handling capability ensure that electric vehicle batteries remain efficient and stable during charging and discharging, optimizing battery life and charging efficiency.
3. **Industrial Automation and Motor Drive: **
In industrial automation systems, SUB75N08-10-E3-VB can be used as an efficient switching element for motor drive systems. Its high current capability and low on-resistance enable it to provide fast response and low energy consumption in motor drive, transmission control and other high-power applications, improving the overall performance and efficiency of industrial equipment.
4. **Solar inverter and energy storage system:**
In solar inverter and energy storage system, this MOSFET provides high-efficiency energy conversion through low RDS(ON), ensuring that the system has lower heat loss during the conversion process, thereby improving the energy efficiency and stability of the system, and is particularly suitable for battery management modules of high-efficiency solar power generation and power storage systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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