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SUB75N08-09L-E3-VB Product details
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Product Introduction
**SUB75N08-09L-E3-VB** is a unipolar N-channel power MOSFET in TO263 package, which adopts advanced Trench technology to provide low on-resistance and excellent current handling capability. This MOSFET is suitable for high-power applications such as power conversion, electric drive, battery management and automotive electronics. The product has a maximum drain-source voltage (VDS) of 80V, a maximum drain current of 120A, and supports a gate-source voltage (VGS) of ±20V, enabling it to operate stably over a wide operating voltage range. The low RDS(ON) value, especially at higher gate-source voltages, can significantly reduce power losses during current transmission and improve system efficiency.
**SUB75N08-09L-E3-VB** is a unipolar N-channel power MOSFET in TO263 package, which adopts advanced Trench technology to provide low on-resistance and excellent current handling capability. This MOSFET is suitable for high-power applications such as power conversion, electric drive, battery management and automotive electronics. The product has a maximum drain-source voltage (VDS) of 80V, a maximum drain current of 120A, and supports a gate-source voltage (VGS) of ±20V, enabling it to operate stably over a wide operating voltage range. The low RDS(ON) value, especially at higher gate-source voltages, can significantly reduce power losses during current transmission and improve system efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package type**: TO263
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 80V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 10mΩ (VGS = 4.5V)
- 6mΩ (VGS = 10V)
- **Maximum drain current (ID)**: 120A
- **Technology type**: Trench technology
- **Package type**: TO263
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 80V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 10mΩ (VGS = 4.5V)
- 6mΩ (VGS = 10V)
- **Maximum drain current (ID)**: 120A
- **Technology type**: Trench technology
Domain and module applications：
Applications and module examples: 1. **Power converters and DC-DC converters: Due to its low on-resistance and high current carrying capacity, **SUB75N08-09L-E3-VB** is very suitable for high-efficiency power conversion systems, especially DC-DC converters, AC-DC converters, etc. In these applications, the low RDS(ON) value of MOSFET can reduce power loss and improve conversion efficiency. It is suitable for power systems that require high efficiency and low heat generation, such as server power supplies, battery charging equipment, and communication equipment power supplies. 2. **Electric vehicles and battery management systems: In battery management modules for electric vehicles (EVs), hybrid electric vehicles (HEVs), and energy storage systems, **SUB75N08-09L-E3-VB** can efficiently control the charging and discharging process of the battery. It can support drain currents up to 120A to ensure stability during battery charging and discharging. The low on-resistance enables it to maintain low power loss at high current operation, which helps improve the overall efficiency of the system and battery life.
3. **Electric drive system**:
In electric drive systems (such as power tools, electric bicycles, electric ships, etc.), **SUB75N08-09L-E3-VB** can be used as a switching element to achieve efficient motor control due to its high current handling capability. The low on-resistance of this MOSFET helps reduce energy loss and ensure high efficiency and long-term stable operation of the electric drive system.
4. **Automotive power management**:
This MOSFET can be widely used in automotive power management systems, especially in battery management and power conversion modules of electric vehicles. Through optimized switching characteristics and high current carrying capacity, **SUB75N08-09L-E3-VB** helps reduce power loss and can provide efficient current control, thereby improving the overall performance and safety of the automotive power system.
5. **Industrial Power Systems**:
In industrial power and power conditioning systems, **SUB75N08-09L-E3-VB** can be used as a high-efficiency power switch, handling currents up to 120A. It is widely used in power conditioning, automation control equipment, and high-power power systems. It has excellent low-resistance conduction characteristics and switching performance, helping to improve the efficiency and reliability of industrial equipment.
6. **Smart Home and Energy Management System**:
With the rise of smart homes and green energy management systems, **SUB75N08-09L-E3-VB** is suitable for providing stable power control in these high-efficiency power management applications, especially in solar inverters and energy storage systems. Low RDS(ON) helps reduce system energy loss, improve overall system efficiency, and ensure stable power supply.
Through these application examples, **SUB75N08-09L-E3-VB** shows its wide applicability in application scenarios with high current load, high power conversion, and strict requirements on low power loss. Whether in electric vehicles, industrial automation, or power management systems, this MOSFET can provide excellent performance and reliability.
3. **Electric drive system**:
In electric drive systems (such as power tools, electric bicycles, electric ships, etc.), **SUB75N08-09L-E3-VB** can be used as a switching element to achieve efficient motor control due to its high current handling capability. The low on-resistance of this MOSFET helps reduce energy loss and ensure high efficiency and long-term stable operation of the electric drive system.
4. **Automotive power management**:
This MOSFET can be widely used in automotive power management systems, especially in battery management and power conversion modules of electric vehicles. Through optimized switching characteristics and high current carrying capacity, **SUB75N08-09L-E3-VB** helps reduce power loss and can provide efficient current control, thereby improving the overall performance and safety of the automotive power system.
5. **Industrial Power Systems**:
In industrial power and power conditioning systems, **SUB75N08-09L-E3-VB** can be used as a high-efficiency power switch, handling currents up to 120A. It is widely used in power conditioning, automation control equipment, and high-power power systems. It has excellent low-resistance conduction characteristics and switching performance, helping to improve the efficiency and reliability of industrial equipment.
6. **Smart Home and Energy Management System**:
With the rise of smart homes and green energy management systems, **SUB75N08-09L-E3-VB** is suitable for providing stable power control in these high-efficiency power management applications, especially in solar inverters and energy storage systems. Low RDS(ON) helps reduce system energy loss, improve overall system efficiency, and ensure stable power supply.
Through these application examples, **SUB75N08-09L-E3-VB** shows its wide applicability in application scenarios with high current load, high power conversion, and strict requirements on low power loss. Whether in electric vehicles, industrial automation, or power management systems, this MOSFET can provide excellent performance and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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