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SUB75N06-07L-VB Product details

Product introduction:

Product Introduction

**SUB75N06-07L-VB** is a **single N-channel** MOSFET in **TO263** package. It adopts advanced **Trench technology** and has low **RDS(ON)** (4mΩ @ VGS=10V), making it suitable for high-current, high-efficiency power conversion applications. With a **VDS** of **60V** and a maximum drain current of **150A**, this MOSFET has extremely low conduction losses and high switching speeds, ensuring stable performance under high load and high-speed switching conditions. Due to its low on-resistance and high current carrying capacity, **SUB75N06-07L-VB** is widely used in high-efficiency power electronics fields such as switching power supplies, battery management, industrial control and electric vehicles.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-N 60V 3V 150A 4mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263 Single-N 60V 3V 150A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263 Single-N 60V 3V 150A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263 Single-N
Detailed parameter description

- **Package type**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 4mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 150A
- **Technology**: Trench technology
- **Maximum power dissipation**: Provides low power loss, suitable for high-power applications
- **Operating temperature range**: Adapts to a wide range of working environments and ensures long-term stable operation.

Domain and module applications:

Applications and module examples

1. **High-efficiency switching power supply (SMPS)**: **SUB75N06-07L-VB** is widely used in high-efficiency switching power supplies. Its low **RDS(ON)** characteristics can effectively reduce conduction losses, and is particularly suitable for working in high-current, high-power power modules. Whether it is an **AC-DC power supply**, a **DC-DC converter**, or a **PFC (power factor correction) circuit**, it can provide efficient power conversion.

2. **Electric Vehicles (EV) and Battery Management Systems (BMS)**: **SUB75N06-07L-VB** is an ideal choice in the battery management system of electric vehicles. Its high current capability and low on-resistance can support the efficient charging and discharging process of electric vehicle batteries, ensuring that the system will not lose efficiency due to overheating or current loss during long-term operation.

3. **Industrial Power Control**: In industrial control systems, **SUB75N06-07L-VB** is suitable for motor drives, inverters, robot control systems, etc. This MOSFET can effectively handle high-frequency and high-power loads, ensuring that industrial equipment can operate stably under high-efficiency conditions while reducing power losses.

4. **Solar Inverter**: In solar inverters, **SUB75N06-07L-VB** can provide efficient power conversion, especially in applications that require high current and high voltage conversion. Its low on-resistance characteristics can reduce energy losses and improve the overall efficiency of the inverter.

5. **Power Conversion Module**: This MOSFET is suitable for efficient power conversion modules such as UPS (Uninterruptible Power Supply) systems, AC power conversion modules, etc. In these modules, **SUB75N06-07L-VB** can ensure long-term reliable operation of the equipment without sacrificing efficiency.

With its extremely low **RDS(ON)** and high current carrying capability, **SUB75N06-07L-VB** MOSFET excels in applications requiring high frequency, high current, and high power, especially in high-efficiency power electronic equipment and electric vehicle systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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