Featured Model

Last updated:

SUB75N05-07-VB Product details

Product introduction:

**SUB75N05-07-VB Product Introduction**

**SUB75N05-07-VB** is a high-performance single N-channel power MOSFET in TO263 package, designed for high current and high power applications. The maximum drain-source voltage (VDS) of this MOSFET is 60V, and the gate-source voltage (VGS) can withstand a maximum of ±20V. By adopting **Trench** technology, this model has an extremely low on-resistance (RDS(ON)), which is 4mΩ at VGS=10V, thereby effectively reducing power loss and improving energy conversion efficiency. Its maximum drain current (ID) is 150A, which can handle large current loads and is suitable for high-efficiency power conversion, power amplifiers, drive circuits and other systems. Its low on-resistance, high current carrying capacity and good thermal management characteristics make it an ideal choice for various high-power switching applications.

File download

Download PDF document
Download now

Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-N 60V 3V 150A 4mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263 Single-N 60V 3V 150A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263 Single-N 60V 3V 150A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263 Single-N
**SUB75N05-07-VB Detailed parameter description**

- **Package**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 4mΩ @ VGS = 10V
- **Drain current (ID)**: 150A
- **Technology type**: Trench

Domain and module applications:

**Application fields and module examples**

1. **High-efficiency power conversion and DC-DC converters**
**SUB75N05-07-VB** is suitable for **DC-DC converters** and other power conversion applications. In these systems, the low on-resistance (RDS(ON)=4mΩ) of the MOSFET ensures higher energy efficiency, especially for high-current power conversion requirements. It is commonly used in power management systems, computer power supplies, server power supplies and battery charging modules, which can effectively reduce losses, improve conversion efficiency and system stability.

2. **Electric vehicles and battery management systems**
In **Electric vehicles (EV)** and **Battery management systems (BMS)**, SUB75N05-07-VB can be used for high-current drive and battery voltage regulation circuits. It can handle currents up to 150A, which is very suitable for fast charging and high-current discharge applications, ensuring that the battery management system can work efficiently and safely, and extending the battery life. Its high current capability is particularly suitable for balanced charging of battery packs and efficient current control under high loads.

3. **Motor Drive and Inverter**
In **motor drive systems** and **inverters**, SUB75N05-07-VB can be used as a current control switch to provide efficient power conversion, especially for high-power drive and frequent switching applications. For example, in **photovoltaic inverter** or **wind power generation inverter**, it can work stably and effectively manage energy flow, thereby improving the power conversion efficiency of the overall system.

4. **Industrial Automation and Servo Systems**
SUB75N05-07-VB is also widely used in **industrial automation** systems and **servo control systems**, especially in control modules that require high current drive. In these systems, MOSFET is responsible for accurately controlling the distribution of current to ensure that the motor or other load can work at optimal efficiency. It can withstand high currents and has low heat loss, making it a very reliable choice in high-precision control systems.

5. **Power amplifier and audio amplifier**
In **audio amplifier** and **power amplifier** modules, SUB75N05-07-VB can be used as an output stage switching element to provide high current drive and ensure stable operation of the system under high load conditions. The low RDS(ON) of the MOSFET enables it to reduce heat generation at high power output and improve the overall efficiency of the amplifier, which is particularly suitable for high-fidelity audio and high-power broadcasting equipment.

6. **Current protection and overcurrent protection module**
This MOSFET can also be widely used in **overcurrent protection circuits**, especially in high current circuits, such as **power fuse modules** or **current limiters**. In these circuits, the high current carrying capacity and low on-resistance of the SUB75N05-07-VB help achieve efficient current protection and overload protection, preventing damage to the system or equipment when the current is too large.

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

Sample Req

QQ

Telephone

400-655-8788

WeChat

WeChat

Topping

Sample Req
Online
Telephone
WeChat