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SUB75N04-05L-VB Product details
Back to previous pageProduct introduction：
1. **Product Introduction**
SUB75N04-05L-VB is a unipolar N-channel power MOSFET in TO263 package with ultra-low on-resistance and high current carrying capacity, suitable for high-efficiency power management and power conversion systems. This MOSFET is designed with Trench technology and has excellent electrical performance and thermal stability. Its maximum drain-source voltage (VDS) is 30V, which is suitable for low-voltage applications, especially in the field of high-frequency switching power supplies and load driving. With its low RDS(ON) (2.7mΩ at VGS = 4.5V) and high drain current (98A), SUB75N04-05L-VB can be used in high-efficiency circuit designs that require high current loads and low conduction losses.
SUB75N04-05L-VB is a unipolar N-channel power MOSFET in TO263 package with ultra-low on-resistance and high current carrying capacity, suitable for high-efficiency power management and power conversion systems. This MOSFET is designed with Trench technology and has excellent electrical performance and thermal stability. Its maximum drain-source voltage (VDS) is 30V, which is suitable for low-voltage applications, especially in the field of high-frequency switching power supplies and load driving. With its low RDS(ON) (2.7mΩ at VGS = 4.5V) and high drain current (98A), SUB75N04-05L-VB can be used in high-efficiency circuit designs that require high current loads and low conduction losses.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | 2.4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. **Detailed parameter description**
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Throw-on voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 2.7mΩ (at VGS = 4.5V)
- 2.4mΩ (at VGS = 10V)
- **Maximum drain current (ID)**: 98A
- **Technology**: Trench technology (Trench MOSFET)
**Notes:**
- **VDS (drain-source voltage)**: SUB75N04-05L-VB The maximum drain-source voltage is 30V, which is suitable for low-voltage applications and medium-voltage circuits.
- **VGS (gate-source voltage)**: The maximum gate-source voltage is ±20V, ensuring its compatibility in a variety of voltage drive environments.
- **RDS(ON) (on-resistance)**: As low as 2.4mΩ (at VGS = 10V), this MOSFET can effectively reduce conduction losses and improve overall efficiency under high current loads.
- **ID (drain current)**: The maximum drain current carrying capacity of 98A is suitable for high load current applications and can meet the needs of high-power circuits.
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Throw-on voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 2.7mΩ (at VGS = 4.5V)
- 2.4mΩ (at VGS = 10V)
- **Maximum drain current (ID)**: 98A
- **Technology**: Trench technology (Trench MOSFET)
**Notes:**
- **VDS (drain-source voltage)**: SUB75N04-05L-VB The maximum drain-source voltage is 30V, which is suitable for low-voltage applications and medium-voltage circuits.
- **VGS (gate-source voltage)**: The maximum gate-source voltage is ±20V, ensuring its compatibility in a variety of voltage drive environments.
- **RDS(ON) (on-resistance)**: As low as 2.4mΩ (at VGS = 10V), this MOSFET can effectively reduce conduction losses and improve overall efficiency under high current loads.
- **ID (drain current)**: The maximum drain current carrying capacity of 98A is suitable for high load current applications and can meet the needs of high-power circuits.
Domain and module applications：
3. **Application fields and module examples**
**1. High-efficiency switching power supplies and DC-DC converters:**
SUB75N04-05L-VB has an ultra-low on-resistance and is particularly suitable for high-efficiency switching power supplies (SMPS) and DC-DC converters. These systems have extremely high requirements for efficiency and thermal management, and the low RDS(ON) of this MOSFET can significantly reduce power loss and improve overall performance. It is particularly suitable for battery-powered power supplies for portable devices, computer power supplies, and power management of communication equipment.
**2. Power tools and motor drive systems:**
In power tools and motor drive systems, SUB75N04-05L-VB provides excellent current carrying capacity and low heat loss. It can effectively drive high-power motors and is suitable for applications such as power tools, electric scooters, and brushless DC motor (BLDC) drives. Its maximum drain current is 98A, which enables it to maintain stable operation under high loads and reduce energy loss.
**3. Battery Management System (BMS): **
This MOSFET is also widely used in battery management systems (BMS). Due to its low RDS(ON) and high current carrying capacity, it can be used for battery charge and discharge protection and switch control. It can effectively manage the current flow of the battery, avoid overcurrent conditions, and improve the efficiency of battery use, especially in the battery management system of portable devices and electric vehicles, ensuring the safety and efficiency of the battery.
**4. Power Conversion and Inverter Systems: **
SUB75N04-05L-VB also plays an important role in inverter systems, especially in high-efficiency power conversion systems such as solar inverters and UPS (uninterruptible power supply systems). Low on-resistance helps improve the conversion efficiency of the inverter, reduce heat accumulation, and ensure long-term stable operation.
**5. High-frequency switching circuits and load drives: **
This MOSFET is also suitable for high-frequency switching circuits and load drive systems. Due to its low RDS(ON), it can effectively reduce switching losses and is suitable for high-frequency applications such as communication equipment, high-frequency load drive and power electronic equipment, providing an efficient and stable working environment.
**Summary**:
SUB75N04-05L-VB is a high-performance low-voltage power MOSFET suitable for a variety of applications such as switching power supplies, battery management, power tools, motor drives and power conversion. With its ultra-low on-resistance and high drain current carrying capacity, it can provide excellent performance in high-efficiency, high-current load circuits and is widely used in various electronic devices requiring high performance and stability.
**1. High-efficiency switching power supplies and DC-DC converters:**
SUB75N04-05L-VB has an ultra-low on-resistance and is particularly suitable for high-efficiency switching power supplies (SMPS) and DC-DC converters. These systems have extremely high requirements for efficiency and thermal management, and the low RDS(ON) of this MOSFET can significantly reduce power loss and improve overall performance. It is particularly suitable for battery-powered power supplies for portable devices, computer power supplies, and power management of communication equipment.
**2. Power tools and motor drive systems:**
In power tools and motor drive systems, SUB75N04-05L-VB provides excellent current carrying capacity and low heat loss. It can effectively drive high-power motors and is suitable for applications such as power tools, electric scooters, and brushless DC motor (BLDC) drives. Its maximum drain current is 98A, which enables it to maintain stable operation under high loads and reduce energy loss.
**3. Battery Management System (BMS): **
This MOSFET is also widely used in battery management systems (BMS). Due to its low RDS(ON) and high current carrying capacity, it can be used for battery charge and discharge protection and switch control. It can effectively manage the current flow of the battery, avoid overcurrent conditions, and improve the efficiency of battery use, especially in the battery management system of portable devices and electric vehicles, ensuring the safety and efficiency of the battery.
**4. Power Conversion and Inverter Systems: **
SUB75N04-05L-VB also plays an important role in inverter systems, especially in high-efficiency power conversion systems such as solar inverters and UPS (uninterruptible power supply systems). Low on-resistance helps improve the conversion efficiency of the inverter, reduce heat accumulation, and ensure long-term stable operation.
**5. High-frequency switching circuits and load drives: **
This MOSFET is also suitable for high-frequency switching circuits and load drive systems. Due to its low RDS(ON), it can effectively reduce switching losses and is suitable for high-frequency applications such as communication equipment, high-frequency load drive and power electronic equipment, providing an efficient and stable working environment.
**Summary**:
SUB75N04-05L-VB is a high-performance low-voltage power MOSFET suitable for a variety of applications such as switching power supplies, battery management, power tools, motor drives and power conversion. With its ultra-low on-resistance and high drain current carrying capacity, it can provide excellent performance in high-efficiency, high-current load circuits and is widely used in various electronic devices requiring high performance and stability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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