中文
English
SUB75N03-04-VB Product details
Back to previous pageProduct introduction：
Product Introduction
**SUB75N03-04-VB** is a unipolar N-channel power MOSFET in TO263 package. It adopts advanced Trench technology to provide excellent conductivity and low switching loss. This MOSFET has a very low on-resistance (RDS(ON)), which can achieve efficient power transmission, especially at a lower gate-source voltage (VGS). It supports a maximum drain-source voltage (VDS) of 30V and a maximum drain current of 98A, suitable for applications requiring low voltage and high current carrying. Its low on-resistance makes the power loss very small under high power load, which can significantly improve the energy efficiency of the system.
**SUB75N03-04-VB** is a unipolar N-channel power MOSFET in TO263 package. It adopts advanced Trench technology to provide excellent conductivity and low switching loss. This MOSFET has a very low on-resistance (RDS(ON)), which can achieve efficient power transmission, especially at a lower gate-source voltage (VGS). It supports a maximum drain-source voltage (VDS) of 30V and a maximum drain current of 98A, suitable for applications requiring low voltage and high current carrying. Its low on-resistance makes the power loss very small under high power load, which can significantly improve the energy efficiency of the system.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | 2.4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package type**: TO263
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 2.7mΩ (VGS = 4.5V)
- 2.4mΩ (VGS = 10V)
- **Maximum drain current (ID)**: 98A
- **Technology type**: Trench technology
- **Package type**: TO263
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 2.7mΩ (VGS = 4.5V)
- 2.4mΩ (VGS = 10V)
- **Maximum drain current (ID)**: 98A
- **Technology type**: Trench technology
Domain and module applications：
Applications and module examples
1. **DC-DC converter**:
SUB75N03-04-VB has excellent efficiency performance in power conversion, especially in DC-DC converters, it can handle high currents and has low on-resistance, reducing power losses and thus improving conversion efficiency. This makes it particularly suitable for power applications that require high efficiency and low heat generation.
2. **Battery management system**:
In battery management systems, especially electric vehicles, power tools and energy storage devices, the high current carrying capacity of MOSFET enables it to effectively control the charging and discharging process of the battery. SUB75N03-04-VB can withstand currents up to 98A, ensuring that the system can still operate stably under high power requirements, while reducing energy losses caused by conduction losses and extending battery life.
3. **Electric drive system**:
This MOSFET plays a key role in electric drive systems such as motor controllers and electric vehicles. It provides efficient power control in applications with high switching frequencies, and can respond quickly and carry high currents, making it suitable for power-intensive electric drives and intelligent control systems.
4. **Power Amplifier**:
SUB75N03-04-VB is suitable as a switching element in power amplifiers due to its low on-resistance and high current handling capability. It can effectively drive high-power loads and operate stably at high frequencies while ensuring minimal power losses, making it particularly suitable for applications such as radio frequency (RF) and high-power amplifiers.
5. **Battery Charger**:
This MOSFET is also commonly used in high-performance battery chargers, especially in applications that require fast charging and high efficiency. Due to its low RDS(ON) value, the SUB75N03-04-VB can significantly reduce power losses during charging, increase charging speed and maintain temperature control.
6. **Automotive electronics**:
In the field of automotive electronics, especially in automotive power management systems, SUB75N03-04-VB is used in modules such as power conversion, intelligent battery charging and power regulation. It can work stably under high current conditions and is suitable for high-efficiency power switches in electric vehicles, hybrid vehicles and automotive electrical systems.
Through these application examples, **SUB75N03-04-VB** can be seen to have a wide range of applications, especially in power management, electric drive systems and power amplification fields of high current, low voltage and high frequency switches. With its low on-resistance and high current carrying capacity, it can effectively improve system efficiency and reduce power loss.
1. **DC-DC converter**:
SUB75N03-04-VB has excellent efficiency performance in power conversion, especially in DC-DC converters, it can handle high currents and has low on-resistance, reducing power losses and thus improving conversion efficiency. This makes it particularly suitable for power applications that require high efficiency and low heat generation.
2. **Battery management system**:
In battery management systems, especially electric vehicles, power tools and energy storage devices, the high current carrying capacity of MOSFET enables it to effectively control the charging and discharging process of the battery. SUB75N03-04-VB can withstand currents up to 98A, ensuring that the system can still operate stably under high power requirements, while reducing energy losses caused by conduction losses and extending battery life.
3. **Electric drive system**:
This MOSFET plays a key role in electric drive systems such as motor controllers and electric vehicles. It provides efficient power control in applications with high switching frequencies, and can respond quickly and carry high currents, making it suitable for power-intensive electric drives and intelligent control systems.
4. **Power Amplifier**:
SUB75N03-04-VB is suitable as a switching element in power amplifiers due to its low on-resistance and high current handling capability. It can effectively drive high-power loads and operate stably at high frequencies while ensuring minimal power losses, making it particularly suitable for applications such as radio frequency (RF) and high-power amplifiers.
5. **Battery Charger**:
This MOSFET is also commonly used in high-performance battery chargers, especially in applications that require fast charging and high efficiency. Due to its low RDS(ON) value, the SUB75N03-04-VB can significantly reduce power losses during charging, increase charging speed and maintain temperature control.
6. **Automotive electronics**:
In the field of automotive electronics, especially in automotive power management systems, SUB75N03-04-VB is used in modules such as power conversion, intelligent battery charging and power regulation. It can work stably under high current conditions and is suitable for high-efficiency power switches in electric vehicles, hybrid vehicles and automotive electrical systems.
Through these application examples, **SUB75N03-04-VB** can be seen to have a wide range of applications, especially in power management, electric drive systems and power amplification fields of high current, low voltage and high frequency switches. With its low on-resistance and high current carrying capacity, it can effectively improve system efficiency and reduce power loss.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
