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SUB70N04-10-VB Product details
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SUB70N04-10-VB Product Introduction
SUB70N04-10-VB is a high-performance N-channel MOSFET with ultra-low on-resistance, packaged in TO263, and is particularly suitable for applications requiring high current and high switching efficiency. It has a drain-source voltage (VDS) of 40V and supports a leakage current (ID) of up to 100A, providing excellent performance for high-power electronic devices. This MOSFET uses Trench technology, has low RDS(ON) (5mΩ@VGS=10V) and fast switching characteristics, and is suitable for a wide range of applications in power management, electric vehicles, motor drives and other fields. Its low on-resistance and high current carrying capacity make it particularly suitable for high-efficiency power conversion and high-frequency switching applications.
SUB70N04-10-VB is a high-performance N-channel MOSFET with ultra-low on-resistance, packaged in TO263, and is particularly suitable for applications requiring high current and high switching efficiency. It has a drain-source voltage (VDS) of 40V and supports a leakage current (ID) of up to 100A, providing excellent performance for high-power electronic devices. This MOSFET uses Trench technology, has low RDS(ON) (5mΩ@VGS=10V) and fast switching characteristics, and is suitable for a wide range of applications in power management, electric vehicles, motor drives and other fields. Its low on-resistance and high current carrying capacity make it particularly suitable for high-efficiency power conversion and high-frequency switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 2.5V | 100A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 2.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 2.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
SUB70N04-10-VB Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS = 4.5V
- 5mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 100A
- **Technology**: Trench technology (with lower on-resistance and optimized switching performance)
- **Switching speed**: Fast switching response, suitable for high frequency applications
- **Maximum power consumption**: Supports high current, suitable for applications with high power density
- **Package type**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS = 4.5V
- 5mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 100A
- **Technology**: Trench technology (with lower on-resistance and optimized switching performance)
- **Switching speed**: Fast switching response, suitable for high frequency applications
- **Maximum power consumption**: Supports high current, suitable for applications with high power density
Domain and module applications：
SUB70N04-10-VB Application Fields and Modules
1. **DC-DC Converters and Power Management Systems**
SUB70N04-10-VB is widely used in DC-DC converters, especially in applications that require high current and high conversion efficiency. Its low on-resistance minimizes power loss, making it particularly suitable for use in efficient power management systems such as mobile devices, battery chargers, and embedded power modules.
2. **Electric Vehicle Motor Drive Systems**
Due to its high current carrying capacity and fast switching performance, SUB70N04-10-VB is particularly suitable for motor drive systems in electric vehicles (EV) and hybrid electric vehicles (HEV). In electric drives and battery management systems, it can effectively control current flow, provide a stable power supply, and ensure efficient operation of the system.
3. **Power Amplifiers and Communication Equipment**
SUB70N04-10-VB is suitable for use in power amplifiers and communication equipment, especially in the fields of wireless communication and signal amplification. Its fast switching characteristics and low on-resistance make it very suitable for high-frequency applications, reducing signal interference and improving power efficiency.
4. **High-efficiency power supply system and UPS (uninterruptible power supply)**
SUB70N04-10-VB has important applications in UPS and high-efficiency power supply systems due to its strong carrying capacity and low power consumption characteristics. It can support long-term high-load operation while ensuring as little energy loss as possible during power conversion, making it an ideal choice for high-efficiency UPS systems.
5. **Industrial automation and robot control**
The low RDS(ON) characteristics and high current carrying capacity of this MOSFET make it widely used in industrial automation and robot control systems. In scenarios requiring efficient power conversion and precise control, SUB70N04-10-VB can provide stable power support and reliable switching performance.
In summary, SUB70N04-10-VB is a high-efficiency, low on-resistance MOSFET, especially suitable for high current and high switching efficiency applications. Whether in power management systems, electric vehicle motor drives, power amplifiers, industrial automation, or UPS systems, this MOSFET can provide excellent performance and help improve the overall efficiency and stability of the system.
1. **DC-DC Converters and Power Management Systems**
SUB70N04-10-VB is widely used in DC-DC converters, especially in applications that require high current and high conversion efficiency. Its low on-resistance minimizes power loss, making it particularly suitable for use in efficient power management systems such as mobile devices, battery chargers, and embedded power modules.
2. **Electric Vehicle Motor Drive Systems**
Due to its high current carrying capacity and fast switching performance, SUB70N04-10-VB is particularly suitable for motor drive systems in electric vehicles (EV) and hybrid electric vehicles (HEV). In electric drives and battery management systems, it can effectively control current flow, provide a stable power supply, and ensure efficient operation of the system.
3. **Power Amplifiers and Communication Equipment**
SUB70N04-10-VB is suitable for use in power amplifiers and communication equipment, especially in the fields of wireless communication and signal amplification. Its fast switching characteristics and low on-resistance make it very suitable for high-frequency applications, reducing signal interference and improving power efficiency.
4. **High-efficiency power supply system and UPS (uninterruptible power supply)**
SUB70N04-10-VB has important applications in UPS and high-efficiency power supply systems due to its strong carrying capacity and low power consumption characteristics. It can support long-term high-load operation while ensuring as little energy loss as possible during power conversion, making it an ideal choice for high-efficiency UPS systems.
5. **Industrial automation and robot control**
The low RDS(ON) characteristics and high current carrying capacity of this MOSFET make it widely used in industrial automation and robot control systems. In scenarios requiring efficient power conversion and precise control, SUB70N04-10-VB can provide stable power support and reliable switching performance.
In summary, SUB70N04-10-VB is a high-efficiency, low on-resistance MOSFET, especially suitable for high current and high switching efficiency applications. Whether in power management systems, electric vehicle motor drives, power amplifiers, industrial automation, or UPS systems, this MOSFET can provide excellent performance and help improve the overall efficiency and stability of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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