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SUB70N03-09-VB Product details
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Product Introduction
**SUB70N03-09-VB** is a unipolar N-channel MOSFET in TO263 package, designed for high-efficiency power conversion and high-current applications. Its low RDS(ON) value enables the MOSFET to exhibit extremely low conduction losses under high current operation, so it is widely used in high-frequency switching power supplies, drive circuits and other systems requiring efficient power conversion. Its maximum drain-source voltage (VDS) is 30V, which is suitable for medium and low voltage applications, and can withstand currents up to 98A. By adopting Trench technology, the device provides high efficiency on-resistance and excellent switching performance, suitable for a variety of modern electronic applications.
**SUB70N03-09-VB** is a unipolar N-channel MOSFET in TO263 package, designed for high-efficiency power conversion and high-current applications. Its low RDS(ON) value enables the MOSFET to exhibit extremely low conduction losses under high current operation, so it is widely used in high-frequency switching power supplies, drive circuits and other systems requiring efficient power conversion. Its maximum drain-source voltage (VDS) is 30V, which is suitable for medium and low voltage applications, and can withstand currents up to 98A. By adopting Trench technology, the device provides high efficiency on-resistance and excellent switching performance, suitable for a variety of modern electronic applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | 2.4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Model**: SUB70N03-09-VB
- **Package**: TO263
- **Configuration**: Unipolar N-channel MOSFET
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 2.7mΩ @ VGS = 4.5V
- 2.4mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 98A
- **Technology**: Trench
- **Operating temperature range**: -55°C to 150°C (under typical applications, the specific temperature depends on the heat dissipation design)
- **Switching speed**: Suitable for high-speed switching applications, providing low conduction loss and fast response
- **Application type**: Used in high-efficiency power management, power conversion and high-current drive circuits, etc.
- **Model**: SUB70N03-09-VB
- **Package**: TO263
- **Configuration**: Unipolar N-channel MOSFET
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 2.7mΩ @ VGS = 4.5V
- 2.4mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 98A
- **Technology**: Trench
- **Operating temperature range**: -55°C to 150°C (under typical applications, the specific temperature depends on the heat dissipation design)
- **Switching speed**: Suitable for high-speed switching applications, providing low conduction loss and fast response
- **Application type**: Used in high-efficiency power management, power conversion and high-current drive circuits, etc.
Domain and module applications：
Applications and module examples
1. **Power supply system**
- In power modules, especially in switch mode power supplies (SMPS), SUB70N03-09-VB can be used to improve efficiency and reduce power consumption, especially in situations where high current and low on-resistance are required. Its high current carrying capacity and low conduction loss make it an ideal choice for efficient power supply design.
2. **Battery Management System (BMS)**
- In a battery management system, the role of MOSFET is to ensure that the battery charging and discharging process is efficient and safe. The low RDS(ON) characteristics of SUB70N03-09-VB make it very suitable for battery switch control, thereby reducing power loss and extending battery life.
3. **Power tool drive circuit**
- This MOSFET can provide efficient current switching in the power tool drive circuit, ensuring low power consumption and high efficiency during motor drive, and improving the overall power tool performance, especially under high load.
4. **Automotive electronics**
- In the field of automotive electronics, SUB70N03-09-VB can be used in the motor drive system, on-board power management and charging control system of electric vehicles. Due to its high temperature resistance and low on-resistance, it can work stably in the complex environment of the car.
5. **DC-DC converter**
- This MOSFET is suitable for various DC-DC converter applications, especially in power conversion situations that require high efficiency, such as computer power supply, industrial power supply, etc. By reducing conduction losses, the overall energy efficiency of the system can be effectively improved.
With its ultra-low on-resistance, high current carrying capacity and excellent switching performance, SUB70N03-09-VB is a key component in a variety of high-efficiency power systems, which can greatly improve the efficiency and stability of electronic equipment.
1. **Power supply system**
- In power modules, especially in switch mode power supplies (SMPS), SUB70N03-09-VB can be used to improve efficiency and reduce power consumption, especially in situations where high current and low on-resistance are required. Its high current carrying capacity and low conduction loss make it an ideal choice for efficient power supply design.
2. **Battery Management System (BMS)**
- In a battery management system, the role of MOSFET is to ensure that the battery charging and discharging process is efficient and safe. The low RDS(ON) characteristics of SUB70N03-09-VB make it very suitable for battery switch control, thereby reducing power loss and extending battery life.
3. **Power tool drive circuit**
- This MOSFET can provide efficient current switching in the power tool drive circuit, ensuring low power consumption and high efficiency during motor drive, and improving the overall power tool performance, especially under high load.
4. **Automotive electronics**
- In the field of automotive electronics, SUB70N03-09-VB can be used in the motor drive system, on-board power management and charging control system of electric vehicles. Due to its high temperature resistance and low on-resistance, it can work stably in the complex environment of the car.
5. **DC-DC converter**
- This MOSFET is suitable for various DC-DC converter applications, especially in power conversion situations that require high efficiency, such as computer power supply, industrial power supply, etc. By reducing conduction losses, the overall energy efficiency of the system can be effectively improved.
With its ultra-low on-resistance, high current carrying capacity and excellent switching performance, SUB70N03-09-VB is a key component in a variety of high-efficiency power systems, which can greatly improve the efficiency and stability of electronic equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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