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SUB70N03-09P-VB Product details
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Product Introduction
**SUB70N03-09P-VB** is a **single N-channel** MOSFET in **TO263** package, designed for high-efficiency power conversion applications. Its **VDS** is **30V**, the maximum drain current is **98A**, and it has an extremely low **RDS(ON)** (2.7mΩ@VGS=4.5V and 2.4mΩ@VGS=10V). This MOSFET uses **Trench technology**, which can significantly reduce power loss and improve system efficiency. It is widely used in power management modules that require high current, high frequency, and low on-resistance. It is particularly suitable for DC-DC converters, battery management systems, electronic loads, and intelligent power devices that require high efficiency and low power consumption.
**SUB70N03-09P-VB** is a **single N-channel** MOSFET in **TO263** package, designed for high-efficiency power conversion applications. Its **VDS** is **30V**, the maximum drain current is **98A**, and it has an extremely low **RDS(ON)** (2.7mΩ@VGS=4.5V and 2.4mΩ@VGS=10V). This MOSFET uses **Trench technology**, which can significantly reduce power loss and improve system efficiency. It is widely used in power management modules that require high current, high frequency, and low on-resistance. It is particularly suitable for DC-DC converters, battery management systems, electronic loads, and intelligent power devices that require high efficiency and low power consumption.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | 2.4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 2.7mΩ @ VGS = 4.5V
- 2.4mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 98A
- **Technology**: Trench technology
- **Operating temperature range**: Suitable for high-frequency, high-efficiency switching power supply applications, with excellent thermal management capabilities.
- **Package type**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 2.7mΩ @ VGS = 4.5V
- 2.4mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 98A
- **Technology**: Trench technology
- **Operating temperature range**: Suitable for high-frequency, high-efficiency switching power supply applications, with excellent thermal management capabilities.
Domain and module applications：
Application fields and module examples
1. **DC-DC converter**: **SUB70N03-09P-VB** is suitable for low voltage and high current DC-DC converter applications. Its ultra-low **RDS(ON)** and high drain current capability make it very suitable for use in power modules, which can effectively reduce energy loss and improve overall conversion efficiency. In power module applications, this MOSFET can significantly reduce switching losses and improve the overall efficiency of the system.
2. **Battery Management System (BMS)**: In the battery management system, **SUB70N03-09P-VB** provides extremely high conduction efficiency and low power loss, and is particularly suitable for applications handling high current loads, such as battery pack management for electric vehicles (EVs). The low RDS(ON) feature helps reduce heat loss during charging and discharging and extend battery life.
3. **Smart Power Devices**: In smart power applications, especially high-efficiency AC-DC power supplies and power conversion modules, **SUB70N03-09P-VB** is able to handle currents up to 98A while maintaining low on-resistance and high efficiency. It is widely used in high-efficiency power adapters, UPS (uninterruptible power supplies) and other high-efficiency power modules to ensure low energy loss during power conversion.
4. **Power Tools and Portable Power**: The high current carrying capacity and low on-resistance of this MOSFET make it an excellent performer in power tools and portable power applications, capable of handling large loads without generating excessive heat, ensuring long-term stable operation of power tools.
5. **Electronic Loads and Power Conversion Modules**: In electronic load testing and power conversion systems, **SUB70N03-09P-VB** is able to provide stable switching performance for precise current control. In systems that require load current regulation and high-efficiency power regulation, this MOSFET provides good performance, enabling the system to maintain high efficiency and stability under different operating conditions.
Through its excellent low on-resistance and high current capability, **SUB70N03-09P-VB** MOSFET has a wide range of application prospects in modern power electronic systems, especially in situations where high efficiency and high current support are required.
1. **DC-DC converter**: **SUB70N03-09P-VB** is suitable for low voltage and high current DC-DC converter applications. Its ultra-low **RDS(ON)** and high drain current capability make it very suitable for use in power modules, which can effectively reduce energy loss and improve overall conversion efficiency. In power module applications, this MOSFET can significantly reduce switching losses and improve the overall efficiency of the system.
2. **Battery Management System (BMS)**: In the battery management system, **SUB70N03-09P-VB** provides extremely high conduction efficiency and low power loss, and is particularly suitable for applications handling high current loads, such as battery pack management for electric vehicles (EVs). The low RDS(ON) feature helps reduce heat loss during charging and discharging and extend battery life.
3. **Smart Power Devices**: In smart power applications, especially high-efficiency AC-DC power supplies and power conversion modules, **SUB70N03-09P-VB** is able to handle currents up to 98A while maintaining low on-resistance and high efficiency. It is widely used in high-efficiency power adapters, UPS (uninterruptible power supplies) and other high-efficiency power modules to ensure low energy loss during power conversion.
4. **Power Tools and Portable Power**: The high current carrying capacity and low on-resistance of this MOSFET make it an excellent performer in power tools and portable power applications, capable of handling large loads without generating excessive heat, ensuring long-term stable operation of power tools.
5. **Electronic Loads and Power Conversion Modules**: In electronic load testing and power conversion systems, **SUB70N03-09P-VB** is able to provide stable switching performance for precise current control. In systems that require load current regulation and high-efficiency power regulation, this MOSFET provides good performance, enabling the system to maintain high efficiency and stability under different operating conditions.
Through its excellent low on-resistance and high current capability, **SUB70N03-09P-VB** MOSFET has a wide range of application prospects in modern power electronic systems, especially in situations where high efficiency and high current support are required.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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