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STY60NM60-VB Product details

Product introduction:

STY60NM60-VB Product Introduction

STY60NM60-VB is a high voltage N-channel MOSFET with a withstand voltage of 650V, suitable for various high voltage and high efficiency power conversion applications. This MOSFET adopts TO247 package, designed to support a maximum leakage current of 48A, with excellent switching performance and low on-resistance (RDS(ON) = 75mΩ @VGS = 10V). This device adopts SJ_Multi-EPI technology, with low switching loss and high withstand voltage, making it widely used in power conversion, inverter, switching power supply and other fields.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO247 Single-N 650V 3.5V 47A 75mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO247 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO247 Single-N 650V 3.5V 47A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO247 Single-N 650V 3.5V 47A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO247 Single-N
STY60NM60-VB Detailed parameter description

- **Package type**: TO247
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 75mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 47A
- **Technology**: SJ_Multi-EPI (Super Junction Multi-EPI technology)
- **Power dissipation capability**: Suitable for high-efficiency power switching applications
- **Switching speed**: Optimized switching performance and lower switching losses

Domain and module applications:

STY60NM60-VB Application Fields and Modules

1. **High-efficiency Switching Power Supply (SMPS)**
The low RDS(ON) value and high VDS capability of STY60NM60-VB make it ideal in switching power supply design, especially for AC-DC or DC-DC converters that require high voltage withstand capability. The high on-current capability and low switching loss of this MOSFET can effectively improve conversion efficiency and reduce power loss.

2. **Inverter and Power Drive System**
Due to its excellent voltage withstand performance and low switching loss, STY60NM60-VB is suitable for high-voltage inverter design such as solar inverters and electric vehicle drive systems. In these applications, the high voltage withstand capability and excellent efficiency of MOSFET help ensure stable operation of the system.

3. **Power Electronics**
STY60NM60-VB is also widely used in power factor correction (PFC) and motor drive applications in the power electronics field. Its strong current carrying capacity and efficient switching characteristics make it very suitable for power converters, UPS systems and high-power power modules.

4. **Home appliances and industrial equipment**
This MOSFET can also be used in power modules in home appliances and industrial equipment, such as power supplies for air conditioners, electric heaters and other home appliances. Its role in these devices is to provide reliable power conversion and efficient energy management, reduce energy loss and extend equipment life.

In summary, STY60NM60-VB is a high-efficiency MOSFET with high voltage tolerance and low on-resistance, suitable for multiple high-power and high-efficiency applications, including switching power supplies, inverters, power drive systems, and power management modules in the industrial and home appliance fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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