STW9NK70Z-VB Product details
Product introduction:
STW9NK70Z-VB is an N-Channel MOSFET based on SJ_Multi-EPI technology, with excellent voltage resistance and low switching loss characteristics, suitable for high-voltage applications. Its rated drain-source voltage (VDS) is up to 700V, suitable for power conversion, switching power supplies and other high-voltage control circuits. This device is packaged in TO247 package, with good heat dissipation performance and high voltage resistance, suitable for handling medium-power applications. STW9NK70Z-VB MOSFET provides relatively low RDS(ON), reduces conduction losses, and has a high current carrying capacity (ID is 11A), which is widely used in high-voltage DC power supplies and other power electronics fields.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 700V | 3.5V | 11A | 450mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 700V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 700V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
- **Model**: STW9NK70Z-VB
- **Package**: TO247
- **Configuration**: Unipolar N-Channel
- **VDS (drain-source voltage)**: 700V
- **VGS (gate-source voltage)**: ±30V
- **Vth (threshold voltage)**: 3.5V
- **RDS(ON)**: 450mΩ @ VGS = 10V
- **ID (maximum drain current)**: 11A
- **Technology**: SJ_Multi-EPI (super junction multi-epitaxial technology)
- **Switching frequency**: Suitable for medium and high frequency switching applications
- **Operating temperature range**: -55°C to 150°C
- **Drain-source current**: 11A
- **On-resistance (RDS(ON))**: Lower on-resistance helps reduce conduction losses and improve overall efficiency.
Domain and module applications:
1. **Power supply system**
STW9NK70Z-VB has high withstand voltage (700V) and high current carrying capacity (11A), so it is very suitable for high-voltage power modules, especially in power devices such as AC-DC power supplies, switching power supplies (SMPS), uninterruptible power supplies (UPS), etc., which can effectively manage the switching of high voltage and high current.
2. **DC power management**
This MOSFET is suitable for DC-DC converters for voltage conversion and regulation. Due to its low on-resistance and high withstand voltage characteristics, it can operate stably without generating a lot of heat, and is suitable for medium and high power DC power conversion.
3. **Power tools and battery management systems**
In power tools or battery management systems (BMS), this MOSFET can provide high efficiency and stability, and is suitable for applications that require high-frequency switching and high voltage and current management. For example, during battery charging and battery discharging of power tools, the STW9NK70Z-VB can provide reliable switching performance.
4. **Industrial power control module**
In industrial automation, motor drive and high-power power control systems, the STW9NK70Z-VB can provide the advantages of high withstand voltage and low on-resistance for use in power switches and power regulation systems, especially in equipment such as DC motor speed regulation and frequency converters.
5. **Photovoltaic inverter**
In the inverter of a photovoltaic system, this MOSFET can efficiently process the DC power from the solar panel and convert it into AC power. It is suitable for applications where high-voltage DC power conversion is required, ensuring high efficiency and stability of the inverter during operation.
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