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STW9NB90-VB Product details

Product introduction:

1. **Product Introduction**

The STW9NB90-VB is a unipolar N-channel power MOSFET in TO247 package, mainly used in high voltage applications. With a drain-source voltage (VDS) tolerance of 900V, the device provides stable performance in a higher voltage environment. Its switching characteristics and low on-resistance make it excellent in high-efficiency power conversion. Using SJ_Multi-EPI technology, this MOSFET has a low on-resistance (RDS(ON) = 750mΩ@VGS=10V) and high withstand voltage performance, suitable for a variety of industrial applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO247 Single-N 900V 3.5V 9A 750mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO247 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO247 Single-N 900V 3.5V 9A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO247 Single-N 900V 3.5V 9A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO247 Single-N
2. **Detailed parameter description**

- **Package**: TO247
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 900V
- **Gate-source voltage (VGS)**: ±30V
- **Throw-on voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 750mΩ (at VGS = 10V)
- **Maximum drain current (ID)**: 9A
- **Technology**: SJ_Multi-EPI (Super Junction Multi-Epitaxial)

**Notes:**
- **VDS (drain-source voltage)**: This MOSFET can withstand voltages up to 900V and is suitable for high voltage DC power supplies and AC power applications.
- **VGS (gate-source voltage)**: The maximum gate-source voltage is ±30V, providing a wider operating range.
- **RDS(ON) (on-resistance)**: The on-resistance of 750mΩ means that this MOSFET has lower resistance losses when turned on, which helps reduce heat build-up and improve efficiency.

Domain and module applications:

3. **Application fields and module examples**

**1. Power supply and inverter modules:**
STW9NB90-VB is suitable for high-voltage power supply systems and inverter modules, especially in applications that require high withstand voltage and low on-resistance, such as solar inverters, UPS (uninterruptible power supply system), battery chargers, etc. In these applications, the high withstand voltage capability (900V) of MOSFET can effectively cope with the high-voltage power supply environment, and its low RDS(ON) helps to improve system efficiency and reduce energy loss.

**2. High-voltage motor drive module:**
In motor drive systems, STW9NB90-VB can be used as a switching element in motor control circuits, especially in applications such as motor drives and inverters. Due to its high drain voltage (900V) and low on-resistance, this MOSFET is suitable for high-voltage motor drive modules to optimize drive performance while improving system reliability.

**3. High-efficiency power conversion systems: **
STW9NB90-VB is also widely used in high-efficiency power conversion systems, such as DC-DC converters, AC-DC converters, etc. These systems require MOSFETs to operate stably at high voltages and provide high-efficiency energy conversion. The low on-resistance (750mΩ) of this MOSFET can significantly reduce power losses during the conversion process.

**4. Industrial automation and control systems: **
In industrial automation systems, STW9NB90-VB can be used in power conditioning modules, voltage regulators and other equipment. These systems often operate in high-voltage environments, so they have high requirements for the withstand voltage performance of the components. At the same time, the high efficiency and stability of this MOSFET enable it to meet the challenges of long-term high-load operation.

**Summary**:
STW9NB90-VB is a high-performance MOSFET with high withstand voltage and low on-resistance. It is very suitable for use in high-voltage power supplies, inverters, motor drives, power conversion systems, industrial automation and other fields to help improve system efficiency and stability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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