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STW55NM60N-VB Product details
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Product Introduction: STW55NM60N-VB
**Model**: STW55NM60N-VB
**Package Type**: TO247
**Configuration**: Single-N-Channel
**Maximum Drain-Source Voltage (VDS)**: 650V
**Maximum Gate-Source Voltage (VGS)**: ±30V
**Threshold Voltage (Vth)**: 3.5V
**On-Resistance (RDS(ON))**: 75mΩ @ VGS = 10V
**Maximum Drain Current (ID)**: 47A
**Technology Type**: SJ_Multi-EPI Technology
STW55NM60N-VB is a Super Junction N-channel power MOSFET with Multi-EPI (SJ_Multi-EPI) technology is designed for high-voltage and high-current applications, with a high voltage of 650V and a low on-resistance of 75mΩ. This MOSFET is suitable for power electronic devices that require high voltage and high current, such as switching power supplies, motor drives, and battery management systems. With its efficient power conversion capability and excellent thermal performance, STW55NM60N-VB is widely used in industry, consumer electronics, and renewable energy fields, and can provide high-efficiency, low-power solutions.
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**Model**: STW55NM60N-VB
**Package Type**: TO247
**Configuration**: Single-N-Channel
**Maximum Drain-Source Voltage (VDS)**: 650V
**Maximum Gate-Source Voltage (VGS)**: ±30V
**Threshold Voltage (Vth)**: 3.5V
**On-Resistance (RDS(ON))**: 75mΩ @ VGS = 10V
**Maximum Drain Current (ID)**: 47A
**Technology Type**: SJ_Multi-EPI Technology
STW55NM60N-VB is a Super Junction N-channel power MOSFET with Multi-EPI (SJ_Multi-EPI) technology is designed for high-voltage and high-current applications, with a high voltage of 650V and a low on-resistance of 75mΩ. This MOSFET is suitable for power electronic devices that require high voltage and high current, such as switching power supplies, motor drives, and battery management systems. With its efficient power conversion capability and excellent thermal performance, STW55NM60N-VB is widely used in industry, consumer electronics, and renewable energy fields, and can provide high-efficiency, low-power solutions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | 75mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description:
1. **VDS (drain-source voltage)**: 650V
- STW55NM60N-VB has a withstand voltage of 650V and can adapt to high voltage working environments. It is suitable for applications that require high voltage tolerance, such as power systems, motor drives, and switching power supplies.
2. **VGS (gate-source voltage)**: ±30V
- The maximum gate-source voltage is ±30V, which supports common drive voltage ranges, is compatible with various commonly used drive circuits, and is suitable for a wide range of power electronic equipment.
3. **Vth (threshold voltage)**: 3.5V
- The threshold voltage is 3.5V, which means that when the gate-source voltage reaches or exceeds 3.5V, the MOSFET starts to turn on. This moderate threshold voltage is suitable for standard drive voltages and ensures good switching performance.
4. **RDS(ON) (On-resistance)**: 75mΩ @ VGS = 10V
- The on-resistance is 75mΩ. The low on-resistance helps reduce power loss and improve system efficiency, especially under high current load.
5. **ID (Drain Current)**: 47A
- The maximum leakage current is 47A, indicating that this MOSFET can handle a large current load and is suitable for high-power applications and high-current devices.
6. **Technology**: SJ_Multi-EPI
- Using Super Junction Multi-EPI technology, it has higher voltage resistance and lower on-resistance, which enables it to have lower switching losses and higher current carrying capacity in high-power applications, ensuring stable operation of the system under high efficiency and high load.
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1. **VDS (drain-source voltage)**: 650V
- STW55NM60N-VB has a withstand voltage of 650V and can adapt to high voltage working environments. It is suitable for applications that require high voltage tolerance, such as power systems, motor drives, and switching power supplies.
2. **VGS (gate-source voltage)**: ±30V
- The maximum gate-source voltage is ±30V, which supports common drive voltage ranges, is compatible with various commonly used drive circuits, and is suitable for a wide range of power electronic equipment.
3. **Vth (threshold voltage)**: 3.5V
- The threshold voltage is 3.5V, which means that when the gate-source voltage reaches or exceeds 3.5V, the MOSFET starts to turn on. This moderate threshold voltage is suitable for standard drive voltages and ensures good switching performance.
4. **RDS(ON) (On-resistance)**: 75mΩ @ VGS = 10V
- The on-resistance is 75mΩ. The low on-resistance helps reduce power loss and improve system efficiency, especially under high current load.
5. **ID (Drain Current)**: 47A
- The maximum leakage current is 47A, indicating that this MOSFET can handle a large current load and is suitable for high-power applications and high-current devices.
6. **Technology**: SJ_Multi-EPI
- Using Super Junction Multi-EPI technology, it has higher voltage resistance and lower on-resistance, which enables it to have lower switching losses and higher current carrying capacity in high-power applications, ensuring stable operation of the system under high efficiency and high load.
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Domain and module applications：
Application fields and module examples:
1. **Switching Power Supply (SMPS)**
- STW55NM60N-VB is widely used in switching power supplies (SMPS), especially in power conversion under high voltage and high current loads. Its 650V withstand voltage and low on-resistance make it very suitable for industrial power supplies, power supply systems, UPS (uninterruptible power supply) and other fields, which can effectively reduce power loss and improve the overall efficiency of the system.
2. **Motor Drive System**
- This MOSFET has important applications in motor drive systems, such as power tools, electric pumps, electric fans and other industrial motor drives. Its high current carrying capacity (47A) and low on-resistance ensure that the motor has high efficiency and low heat generation when driving, which is particularly suitable for drive systems that require high power conversion.
3. **Inverter**
- STW55NM60N-VB is widely used in solar inverters, wind power inverters, electric vehicle (EV) inverters and other fields. It can efficiently convert direct current (DC) power to alternating current (AC), work reliably in high voltage environments, support high-efficiency energy conversion, and is particularly suitable for power conversion needs in new energy systems.
4. **Electric vehicle charging system**
- In electric vehicle (EV) charging systems, STW55NM60N-VB can provide efficient power conversion, support fast charging and battery management system (BMS). Its high withstand voltage, low on-resistance and high leakage current carrying capacity make it suitable for electric vehicle charging piles, smart grids and battery protection modules.
5. **Power factor correction (PFC) circuit**
- This MOSFET is widely used in power factor correction (PFC) circuits, especially in power electronic equipment with high power factor requirements. STW55NM60N-VB can optimize the power factor and reduce power loss, improve the power conversion efficiency, and is commonly found in high-efficiency power equipment.
6. **Industrial power system**
- In industrial power dispatching and management systems, STW55NM60N-VB can help achieve efficient power control and power conversion. It can work stably under high voltage and high current loads, ensuring the stability and efficiency of industrial power systems, and is suitable for power conversion, dispatching systems and large power equipment.
7. **High-efficiency energy management system**
- STW55NM60N-VB is also suitable for various energy management systems, such as smart grids, wind power generation and solar power generation systems. In these systems, it can handle high voltage, high current, and provide efficient power conversion, helping to achieve efficient utilization and management of clean energy.
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STW55NM60N-VB is widely used in switching power supply, motor drive, inverter, electric vehicle charging, PFC circuit and industrial power system with its high withstand voltage of 650V, low on-resistance of 75mΩ and high current carrying capacity of 47A. The SJ_Multi-EPI technology it adopts provides excellent electrical performance, making it perform well in high power and high current environments, meeting the application requirements of high efficiency, low power consumption, stability and reliability.
1. **Switching Power Supply (SMPS)**
- STW55NM60N-VB is widely used in switching power supplies (SMPS), especially in power conversion under high voltage and high current loads. Its 650V withstand voltage and low on-resistance make it very suitable for industrial power supplies, power supply systems, UPS (uninterruptible power supply) and other fields, which can effectively reduce power loss and improve the overall efficiency of the system.
2. **Motor Drive System**
- This MOSFET has important applications in motor drive systems, such as power tools, electric pumps, electric fans and other industrial motor drives. Its high current carrying capacity (47A) and low on-resistance ensure that the motor has high efficiency and low heat generation when driving, which is particularly suitable for drive systems that require high power conversion.
3. **Inverter**
- STW55NM60N-VB is widely used in solar inverters, wind power inverters, electric vehicle (EV) inverters and other fields. It can efficiently convert direct current (DC) power to alternating current (AC), work reliably in high voltage environments, support high-efficiency energy conversion, and is particularly suitable for power conversion needs in new energy systems.
4. **Electric vehicle charging system**
- In electric vehicle (EV) charging systems, STW55NM60N-VB can provide efficient power conversion, support fast charging and battery management system (BMS). Its high withstand voltage, low on-resistance and high leakage current carrying capacity make it suitable for electric vehicle charging piles, smart grids and battery protection modules.
5. **Power factor correction (PFC) circuit**
- This MOSFET is widely used in power factor correction (PFC) circuits, especially in power electronic equipment with high power factor requirements. STW55NM60N-VB can optimize the power factor and reduce power loss, improve the power conversion efficiency, and is commonly found in high-efficiency power equipment.
6. **Industrial power system**
- In industrial power dispatching and management systems, STW55NM60N-VB can help achieve efficient power control and power conversion. It can work stably under high voltage and high current loads, ensuring the stability and efficiency of industrial power systems, and is suitable for power conversion, dispatching systems and large power equipment.
7. **High-efficiency energy management system**
- STW55NM60N-VB is also suitable for various energy management systems, such as smart grids, wind power generation and solar power generation systems. In these systems, it can handle high voltage, high current, and provide efficient power conversion, helping to achieve efficient utilization and management of clean energy.
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STW55NM60N-VB is widely used in switching power supply, motor drive, inverter, electric vehicle charging, PFC circuit and industrial power system with its high withstand voltage of 650V, low on-resistance of 75mΩ and high current carrying capacity of 47A. The SJ_Multi-EPI technology it adopts provides excellent electrical performance, making it perform well in high power and high current environments, meeting the application requirements of high efficiency, low power consumption, stability and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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