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STW48NM60N-VB Product details
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1. **STW48NM60N-VB Product Introduction: **
STW48NM60N-VB is a high-performance N-channel MOSFET in TO247 package, designed for high voltage and high current applications. It has a maximum drain-source voltage (VDS) of 650V and a maximum drain current (ID) of 47A, suitable for high voltage and high power power electronic systems. This MOSFET adopts SJ_Multi-EPI technology (super junction multi-epitaxial technology), which can provide low on-resistance (RDS(ON)), reduce power loss and improve switching efficiency. This MOSFET is suitable for high voltage and high efficiency applications such as power conversion, inverters, and motor drives, and is widely used in industrial power, renewable energy, automation systems and other fields.
STW48NM60N-VB is a high-performance N-channel MOSFET in TO247 package, designed for high voltage and high current applications. It has a maximum drain-source voltage (VDS) of 650V and a maximum drain current (ID) of 47A, suitable for high voltage and high power power electronic systems. This MOSFET adopts SJ_Multi-EPI technology (super junction multi-epitaxial technology), which can provide low on-resistance (RDS(ON)), reduce power loss and improve switching efficiency. This MOSFET is suitable for high voltage and high efficiency applications such as power conversion, inverters, and motor drives, and is widely used in industrial power, renewable energy, automation systems and other fields.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | 75mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
2. **STW48NM60N-VB Detailed Parameters:**
- **Package Type:** TO247
- **Configuration:** Single-N-Channel
- **Maximum Drain-Source Voltage (VDS):** 650V
- **Maximum Gate-Source Voltage (VGS):** ±30V
- **Threshold Voltage (Vth):** 3.5V
- **On-Resistance (RDS(ON)):** 75mΩ @ VGS=10V
- **Maximum Drain Current (ID):** 47A
- **Technology:** SJ_Multi-EPI（Super Junction Multi-Epitaxial）
- **Maximum Power Loss:** High Efficiency Switching, Low Power Loss
- **Operating Temperature Range:** -55°C to +150°C
- **Application areas:** High voltage switching power supply, inverter, motor drive, power regulation system, etc.
- **Package Type:** TO247
- **Configuration:** Single-N-Channel
- **Maximum Drain-Source Voltage (VDS):** 650V
- **Maximum Gate-Source Voltage (VGS):** ±30V
- **Threshold Voltage (Vth):** 3.5V
- **On-Resistance (RDS(ON)):** 75mΩ @ VGS=10V
- **Maximum Drain Current (ID):** 47A
- **Technology:** SJ_Multi-EPI（Super Junction Multi-Epitaxial）
- **Maximum Power Loss:** High Efficiency Switching, Low Power Loss
- **Operating Temperature Range:** -55°C to +150°C
- **Application areas:** High voltage switching power supply, inverter, motor drive, power regulation system, etc.
Domain and module applications：
3. **Application fields and module examples:**
**1. High-voltage switch-mode power supply (SMPS):**
The STW48NM60N-VB has a maximum drain-source voltage of 650V and a maximum drain current of 47A, which is suitable for high-voltage switch-mode power supply (SMPS). This MOSFET can effectively handle high-power power conversion, reduce energy loss and improve power efficiency. In industrial power supply, communication power supply and uninterruptible power supply (UPS) systems, the low on-resistance (RDS(ON)) of the STW48NM60N-VB can significantly reduce heat and power consumption during power conversion.
**2. Inverters:**
The STW48NM60N-VB is a MOSFET that is very suitable for inverter applications, especially in solar inverters, electric vehicle charging inverters and wind power inverters. Its high withstand voltage (650V) and high current carrying capacity (47A) enable it to withstand high power current loads. Low RDS(ON) values ensure higher switching efficiency and lower power loss, and are an important component of efficient energy conversion.
**3. Motor drive and control: **
STW48NM60N-VB is suitable for motor drive systems, especially in industrial automation, robotics, electric vehicles (such as electric vehicles) and household power tools. It can efficiently handle high-power loads and provide smooth and reliable motor control. The low on-resistance characteristics help reduce heat loss in the drive system and improve the energy efficiency and reliability of the motor.
**4. Power regulation and industrial power systems: **
In industrial power regulation and load control systems, STW48NM60N-VB is widely used as a high-voltage power switch in power transmission, load regulation and power protection. Due to its high withstand voltage and high current capability, it can work stably in the power system to ensure high efficiency and safety in the power regulation process.
**5. Renewable energy systems: **
STW48NM60N-VB is an ideal choice for efficient power conversion in photovoltaic power generation, wind power generation and other renewable energy systems. The high withstand voltage and low on-resistance characteristics of this MOSFET can ensure efficient current control and power conversion during energy conversion. Whether in large-scale photovoltaic arrays or in small wind power generation systems, it can provide efficient and stable performance.
**1. High-voltage switch-mode power supply (SMPS):**
The STW48NM60N-VB has a maximum drain-source voltage of 650V and a maximum drain current of 47A, which is suitable for high-voltage switch-mode power supply (SMPS). This MOSFET can effectively handle high-power power conversion, reduce energy loss and improve power efficiency. In industrial power supply, communication power supply and uninterruptible power supply (UPS) systems, the low on-resistance (RDS(ON)) of the STW48NM60N-VB can significantly reduce heat and power consumption during power conversion.
**2. Inverters:**
The STW48NM60N-VB is a MOSFET that is very suitable for inverter applications, especially in solar inverters, electric vehicle charging inverters and wind power inverters. Its high withstand voltage (650V) and high current carrying capacity (47A) enable it to withstand high power current loads. Low RDS(ON) values ensure higher switching efficiency and lower power loss, and are an important component of efficient energy conversion.
**3. Motor drive and control: **
STW48NM60N-VB is suitable for motor drive systems, especially in industrial automation, robotics, electric vehicles (such as electric vehicles) and household power tools. It can efficiently handle high-power loads and provide smooth and reliable motor control. The low on-resistance characteristics help reduce heat loss in the drive system and improve the energy efficiency and reliability of the motor.
**4. Power regulation and industrial power systems: **
In industrial power regulation and load control systems, STW48NM60N-VB is widely used as a high-voltage power switch in power transmission, load regulation and power protection. Due to its high withstand voltage and high current capability, it can work stably in the power system to ensure high efficiency and safety in the power regulation process.
**5. Renewable energy systems: **
STW48NM60N-VB is an ideal choice for efficient power conversion in photovoltaic power generation, wind power generation and other renewable energy systems. The high withstand voltage and low on-resistance characteristics of this MOSFET can ensure efficient current control and power conversion during energy conversion. Whether in large-scale photovoltaic arrays or in small wind power generation systems, it can provide efficient and stable performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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