中文
English
STW47NM60ND-VB Product details
Back to previous pageProduct introduction：
Product Introduction
**STW47NM60ND-VB** is a high-performance **single N-channel MOSFET** in **TO247 package**, based on **SJ_Multi-EPI technology**. The **drain-source voltage** (Vds) of this MOSFET is as high as **650V**, and the maximum **drain current** (Id) is **47A**, which can provide excellent performance in a variety of high-power applications. Its **low on-resistance** (Rds(on) = 75mΩ @ Vgs = 10V) enables it to have lower switching losses and higher operating efficiency, and is particularly suitable for high-current and high-voltage power management, power conversion and motor drive.
**STW47NM60ND-VB** is designed for applications that require high efficiency, high power and stable operation. It can operate in high-temperature environments, provide long-life performance, and reduce heat loss in the system, ensuring that the system can still operate reliably under harsh working conditions.
**STW47NM60ND-VB** is a high-performance **single N-channel MOSFET** in **TO247 package**, based on **SJ_Multi-EPI technology**. The **drain-source voltage** (Vds) of this MOSFET is as high as **650V**, and the maximum **drain current** (Id) is **47A**, which can provide excellent performance in a variety of high-power applications. Its **low on-resistance** (Rds(on) = 75mΩ @ Vgs = 10V) enables it to have lower switching losses and higher operating efficiency, and is particularly suitable for high-current and high-voltage power management, power conversion and motor drive.
**STW47NM60ND-VB** is designed for applications that require high efficiency, high power and stable operation. It can operate in high-temperature environments, provide long-life performance, and reduce heat loss in the system, ensuring that the system can still operate reliably under harsh working conditions.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | 75mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Package type**: TO247
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (Vds)**: 650V
- **Maximum gate-source voltage (Vgs)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (Rds(on))**:
- @Vgs = 10V: 75mΩ
- **Maximum drain current (Id)**: 47A
- **Maximum power dissipation (Pd)**: About 150W (the specific value depends on the working conditions)
- **Input capacitance (Ciss)**: About 1800pF @ Vds = 100V
- **Output capacitance (Coss)**: About 200pF @ Vds = 100V
- **Reverse Recovery Time (Trr)**: 180ns max.
- **Operating Temperature Range**: -55°C to +150°C
- **Technology**: SJ_Multi-EPI (Super Junction Multi-EPI Technology)
- **Package type**: TO247
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (Vds)**: 650V
- **Maximum gate-source voltage (Vgs)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (Rds(on))**:
- @Vgs = 10V: 75mΩ
- **Maximum drain current (Id)**: 47A
- **Maximum power dissipation (Pd)**: About 150W (the specific value depends on the working conditions)
- **Input capacitance (Ciss)**: About 1800pF @ Vds = 100V
- **Output capacitance (Coss)**: About 200pF @ Vds = 100V
- **Reverse Recovery Time (Trr)**: 180ns max.
- **Operating Temperature Range**: -55°C to +150°C
- **Technology**: SJ_Multi-EPI (Super Junction Multi-EPI Technology)
Domain and module applications：
Applicable fields and module application examples
1. **High-efficiency power management system**
**STW47NM60ND-VB** has a drain-source voltage of up to **650V**, which is very suitable for **high-efficiency power management** systems, especially **DC-DC converters** and **AC-DC converters**. Its low on-resistance can reduce switching losses, making it more efficient in the power conversion process. This MOSFET can handle high power requirements and remain stable during long-term operation, making it suitable for **industrial power**, **computer power**, **communication equipment power** and other fields.
2. **Motor control**
**STW47NM60ND-VB** has a wide range of applications in **motor control systems**, especially **DC motor drive** and **brushless DC motor (BLDC) control**. This MOSFET provides high current capability (maximum 47A) and low on-resistance, which can efficiently control the start, speed regulation and stop of the motor. It is ideal for use in **power tools**, **home appliances**, **electric vehicle drive systems** and other scenarios that require efficient motor control.
3. **Inverter applications**
In **inverters**, especially **solar inverters**, **STW47NM60ND-VB** can provide efficient **DC-AC conversion**. The MOSFET can withstand drain-source voltages up to **650V**, converting DC to AC in solar power generation systems and optimizing energy conversion efficiency. It is suitable for **renewable energy systems**, **solar power generation**, and **wind power generation systems**.
4. **Battery Management System (BMS)**
**STW47NM60ND-VB**'s high current capability and low on-resistance make it an ideal choice for **battery management systems (BMS)**. It can provide efficient current control during charging and discharging, ensure battery voltage stability, and prevent batteries from over-discharging or over-charging, extending battery life. It is particularly suitable for applications requiring precise battery management, such as **electric vehicles**, **energy storage systems** and **UPS power systems**.
5. **Power amplifier**
Due to its high voltage tolerance and high current carrying capacity, **STW47NM60ND-VB** can also be used in **power amplifier** systems, especially in **high frequency signal transmission** and **RF amplifiers**. Its low switching loss and high operating efficiency make it suitable for **wireless communication** and **radar systems**, etc., to efficiently amplify signals and maximize system performance.
6. **LED driver**
This MOSFET can be used in **LED drivers**, especially in applications requiring precise current regulation and efficient power conversion. **STW47NM60ND-VB**'s low on-resistance and high current capability enable it to efficiently drive LED lamps, which are widely used in **commercial lighting**, **street lighting**, **landscape lighting** and other places. Its stability and high temperature resistance enable it to operate for a long time in harsh environments.
7. **Power filtering and protection**
In power electronic systems, **STW47NM60ND-VB** can be used for power filtering and overvoltage protection to help improve system reliability and stability. It can perform efficient switching functions in power equipment, reduce energy loss, and prevent damage caused by overload and overcurrent, especially in **industrial power supplies** and **automation control systems**.
8. **Automotive electronic systems**
**STW47NM60ND-VB** is very suitable for **automotive electronic systems**, such as **electric vehicle charging systems**, **hybrid electric vehicle (HEV) control** and **automotive power management**, due to its high voltage resistance and high current capability. It can withstand high voltage shocks and provide efficient current management and voltage regulation to ensure the stability and safety of the vehicle's power system.
1. **High-efficiency power management system**
**STW47NM60ND-VB** has a drain-source voltage of up to **650V**, which is very suitable for **high-efficiency power management** systems, especially **DC-DC converters** and **AC-DC converters**. Its low on-resistance can reduce switching losses, making it more efficient in the power conversion process. This MOSFET can handle high power requirements and remain stable during long-term operation, making it suitable for **industrial power**, **computer power**, **communication equipment power** and other fields.
2. **Motor control**
**STW47NM60ND-VB** has a wide range of applications in **motor control systems**, especially **DC motor drive** and **brushless DC motor (BLDC) control**. This MOSFET provides high current capability (maximum 47A) and low on-resistance, which can efficiently control the start, speed regulation and stop of the motor. It is ideal for use in **power tools**, **home appliances**, **electric vehicle drive systems** and other scenarios that require efficient motor control.
3. **Inverter applications**
In **inverters**, especially **solar inverters**, **STW47NM60ND-VB** can provide efficient **DC-AC conversion**. The MOSFET can withstand drain-source voltages up to **650V**, converting DC to AC in solar power generation systems and optimizing energy conversion efficiency. It is suitable for **renewable energy systems**, **solar power generation**, and **wind power generation systems**.
4. **Battery Management System (BMS)**
**STW47NM60ND-VB**'s high current capability and low on-resistance make it an ideal choice for **battery management systems (BMS)**. It can provide efficient current control during charging and discharging, ensure battery voltage stability, and prevent batteries from over-discharging or over-charging, extending battery life. It is particularly suitable for applications requiring precise battery management, such as **electric vehicles**, **energy storage systems** and **UPS power systems**.
5. **Power amplifier**
Due to its high voltage tolerance and high current carrying capacity, **STW47NM60ND-VB** can also be used in **power amplifier** systems, especially in **high frequency signal transmission** and **RF amplifiers**. Its low switching loss and high operating efficiency make it suitable for **wireless communication** and **radar systems**, etc., to efficiently amplify signals and maximize system performance.
6. **LED driver**
This MOSFET can be used in **LED drivers**, especially in applications requiring precise current regulation and efficient power conversion. **STW47NM60ND-VB**'s low on-resistance and high current capability enable it to efficiently drive LED lamps, which are widely used in **commercial lighting**, **street lighting**, **landscape lighting** and other places. Its stability and high temperature resistance enable it to operate for a long time in harsh environments.
7. **Power filtering and protection**
In power electronic systems, **STW47NM60ND-VB** can be used for power filtering and overvoltage protection to help improve system reliability and stability. It can perform efficient switching functions in power equipment, reduce energy loss, and prevent damage caused by overload and overcurrent, especially in **industrial power supplies** and **automation control systems**.
8. **Automotive electronic systems**
**STW47NM60ND-VB** is very suitable for **automotive electronic systems**, such as **electric vehicle charging systems**, **hybrid electric vehicle (HEV) control** and **automotive power management**, due to its high voltage resistance and high current capability. It can withstand high voltage shocks and provide efficient current management and voltage regulation to ensure the stability and safety of the vehicle's power system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
