中文
English
STW45N65M5-VB Product details
Back to previous pageProduct introduction：
Product Introduction: STW45N65M5-VB
**Model**: STW45N65M5-VB
**Package Type**: TO247
**Configuration**: Single-N-Channel
**Maximum Drain-Source Voltage (VDS)**: 650V
**Maximum Gate-Source Voltage (VGS)**: ±30V
**Threshold Voltage (Vth)**: 3.5V
**On-Resistance (RDS(ON))**: 75mΩ @ VGS = 10V
**Maximum Drain Current (ID)**: 47A
**Technology Type**: SJ_Multi-EPI Technology
STW45N65M5-VB is a Super Junction The high-performance N-channel power MOSFET with Multi-EPI (SJ_Multi-EPI) technology is designed for high-voltage and high-current load applications. It has a high voltage withstand capability of 650V and a low on-resistance of 75mΩ, making it excellent in applications such as high-efficiency power conversion, switching power supplies, and motor drives. It is widely used in power electronics that require high voltage, high current, and low power loss.
---
**Model**: STW45N65M5-VB
**Package Type**: TO247
**Configuration**: Single-N-Channel
**Maximum Drain-Source Voltage (VDS)**: 650V
**Maximum Gate-Source Voltage (VGS)**: ±30V
**Threshold Voltage (Vth)**: 3.5V
**On-Resistance (RDS(ON))**: 75mΩ @ VGS = 10V
**Maximum Drain Current (ID)**: 47A
**Technology Type**: SJ_Multi-EPI Technology
STW45N65M5-VB is a Super Junction The high-performance N-channel power MOSFET with Multi-EPI (SJ_Multi-EPI) technology is designed for high-voltage and high-current load applications. It has a high voltage withstand capability of 650V and a low on-resistance of 75mΩ, making it excellent in applications such as high-efficiency power conversion, switching power supplies, and motor drives. It is widely used in power electronics that require high voltage, high current, and low power loss.
---
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | 75mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description:
1. **VDS (drain-source voltage)**: 650V
- The maximum drain-source voltage of this MOSFET is 650V, which is suitable for power conversion applications in high-voltage environments. It can withstand higher voltages and thus work stably in systems such as power supplies and motor drives.
2. **VGS (gate-source voltage)**: ±30V
- The maximum gate-source voltage is ±30V, supporting a common drive voltage range, ensuring compatibility with standard drive circuits, and can operate stably in various power electronics applications.
3. **Vth (threshold voltage)**: 3.5V
- The threshold voltage is 3.5V, indicating that the MOSFET starts to turn on when the gate-source voltage reaches this value. This Vth is suitable for high-voltage drive requirements and ensures good switching performance.
4. **RDS(ON) (on-resistance)**: 75mΩ @ VGS = 10V
- The on-resistance is 75mΩ. The low on-resistance can effectively reduce power loss under high current load and improve conversion efficiency, which is an ideal choice for power-intensive applications.
5. **ID (leakage current)**: 47A
- The maximum leakage current is 47A, indicating that this MOSFET can withstand a large current load and is suitable for high-power applications, especially motor drive systems and high-power switching power supplies.
6. **Technology**: SJ_Multi-EPI
- Using Super Junction Multi-EPI (SJ_Multi-EPI) technology, it has lower on-resistance and higher breakdown voltage, which can provide better performance in high current and high voltage applications, reduce switching losses and improve power conversion efficiency.
---
1. **VDS (drain-source voltage)**: 650V
- The maximum drain-source voltage of this MOSFET is 650V, which is suitable for power conversion applications in high-voltage environments. It can withstand higher voltages and thus work stably in systems such as power supplies and motor drives.
2. **VGS (gate-source voltage)**: ±30V
- The maximum gate-source voltage is ±30V, supporting a common drive voltage range, ensuring compatibility with standard drive circuits, and can operate stably in various power electronics applications.
3. **Vth (threshold voltage)**: 3.5V
- The threshold voltage is 3.5V, indicating that the MOSFET starts to turn on when the gate-source voltage reaches this value. This Vth is suitable for high-voltage drive requirements and ensures good switching performance.
4. **RDS(ON) (on-resistance)**: 75mΩ @ VGS = 10V
- The on-resistance is 75mΩ. The low on-resistance can effectively reduce power loss under high current load and improve conversion efficiency, which is an ideal choice for power-intensive applications.
5. **ID (leakage current)**: 47A
- The maximum leakage current is 47A, indicating that this MOSFET can withstand a large current load and is suitable for high-power applications, especially motor drive systems and high-power switching power supplies.
6. **Technology**: SJ_Multi-EPI
- Using Super Junction Multi-EPI (SJ_Multi-EPI) technology, it has lower on-resistance and higher breakdown voltage, which can provide better performance in high current and high voltage applications, reduce switching losses and improve power conversion efficiency.
---
Domain and module applications：
Application fields and module examples:
1. **Switching Power Supply (SMPS)**:
- STW45N65M5-VB is widely used in switching power supplies (SMPS), especially in power conversion systems with high voltage and high current. Its 650V withstand voltage and low on-resistance make it perform well in high-efficiency power systems, especially for applications such as UPS (uninterruptible power supply), server power supply and industrial power supply, which can effectively reduce power loss and improve the conversion efficiency of the overall system.
2. **Inverter Application**:
- This MOSFET is suitable for inverters such as solar inverters, wind power generation systems and electric vehicle (EV) inverters. The 650V withstand voltage capability of STW45N65M5-VB ensures that it can withstand high voltages from photovoltaic modules, wind turbines and batteries, while its high leakage current carrying capacity can handle large current loads, ensuring that the inverter works stably under high efficiency and high load conditions.
3. **Electric Vehicles (EV) and Charging Systems**:
- In electric vehicle (EV) charging stations and battery management systems (BMS), the STW45N65M5-VB provides efficient power conversion and drive functions, capable of withstanding high voltages and high currents. Its low on-resistance and high current carrying capacity enable it to excel in the drive system of electric vehicles, ensuring high efficiency and low losses during battery charging and discharging.
4. **Motor Drive Systems**:
- This MOSFET can be widely used in motor drive systems, especially in power tools, electric pumps, electric fans and other equipment that require high voltage and high current. The STW45N65M5-VB can provide efficient power conversion, reduce heat loss and improve system performance, making it an ideal choice for driving motors and other loads.
5. **High-voltage Power Electronic Systems**:
- The STW45N65M5-VB is suitable for high-voltage power electronic systems, such as high-voltage power modules, power amplifiers and other industrial power conversion systems. In these systems, it can work stably and handle high voltage and high current loads to ensure efficient operation of power equipment.
6. **Power Factor Correction (PFC) Circuit**:
- In the power factor correction (PFC) circuit, STW45N65M5-VB can improve the conversion efficiency of the system and reduce power loss. It is widely used in power electronic equipment that requires high power factor to ensure the stability of the power grid and improve the overall performance of the equipment.
7. **Power Dispatching and Management System**:
- STW45N65M5-VB also has important applications in power dispatching and management systems, which can help optimize power conversion and current regulation, ensure stable operation of the system under high voltage and high current loads, and is especially suitable for high-efficiency conversion in industrial and commercial power dispatching systems.
---
STW45N65M5-VB is widely used in high-efficiency power conversion systems, inverters, electric vehicle charging systems, industrial power supplies and other fields with its 650V withstand voltage, 75mΩ low on-resistance and 47A high leakage current carrying capacity. Its excellent performance enables it to perform well in high-voltage, high-current and low-loss applications, making it an indispensable core component in the field of power electronics.
1. **Switching Power Supply (SMPS)**:
- STW45N65M5-VB is widely used in switching power supplies (SMPS), especially in power conversion systems with high voltage and high current. Its 650V withstand voltage and low on-resistance make it perform well in high-efficiency power systems, especially for applications such as UPS (uninterruptible power supply), server power supply and industrial power supply, which can effectively reduce power loss and improve the conversion efficiency of the overall system.
2. **Inverter Application**:
- This MOSFET is suitable for inverters such as solar inverters, wind power generation systems and electric vehicle (EV) inverters. The 650V withstand voltage capability of STW45N65M5-VB ensures that it can withstand high voltages from photovoltaic modules, wind turbines and batteries, while its high leakage current carrying capacity can handle large current loads, ensuring that the inverter works stably under high efficiency and high load conditions.
3. **Electric Vehicles (EV) and Charging Systems**:
- In electric vehicle (EV) charging stations and battery management systems (BMS), the STW45N65M5-VB provides efficient power conversion and drive functions, capable of withstanding high voltages and high currents. Its low on-resistance and high current carrying capacity enable it to excel in the drive system of electric vehicles, ensuring high efficiency and low losses during battery charging and discharging.
4. **Motor Drive Systems**:
- This MOSFET can be widely used in motor drive systems, especially in power tools, electric pumps, electric fans and other equipment that require high voltage and high current. The STW45N65M5-VB can provide efficient power conversion, reduce heat loss and improve system performance, making it an ideal choice for driving motors and other loads.
5. **High-voltage Power Electronic Systems**:
- The STW45N65M5-VB is suitable for high-voltage power electronic systems, such as high-voltage power modules, power amplifiers and other industrial power conversion systems. In these systems, it can work stably and handle high voltage and high current loads to ensure efficient operation of power equipment.
6. **Power Factor Correction (PFC) Circuit**:
- In the power factor correction (PFC) circuit, STW45N65M5-VB can improve the conversion efficiency of the system and reduce power loss. It is widely used in power electronic equipment that requires high power factor to ensure the stability of the power grid and improve the overall performance of the equipment.
7. **Power Dispatching and Management System**:
- STW45N65M5-VB also has important applications in power dispatching and management systems, which can help optimize power conversion and current regulation, ensure stable operation of the system under high voltage and high current loads, and is especially suitable for high-efficiency conversion in industrial and commercial power dispatching systems.
---
STW45N65M5-VB is widely used in high-efficiency power conversion systems, inverters, electric vehicle charging systems, industrial power supplies and other fields with its 650V withstand voltage, 75mΩ low on-resistance and 47A high leakage current carrying capacity. Its excellent performance enables it to perform well in high-voltage, high-current and low-loss applications, making it an indispensable core component in the field of power electronics.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
