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STW34NM60N-VB Product details
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Product Introduction: STW34NM60N-VB
**Model**: STW34NM60N-VB
**Package Type**: TO247
**Configuration**: Single-N-Channel
**Maximum Drain-Source Voltage (VDS)**: 650V
**Maximum Gate-Source Voltage (VGS)**: ±30V
**Threshold Voltage (Vth)**: 3.5V
**On-Resistance (RDS(ON))**: 75mΩ @ VGS = 10V
**Maximum Drain Current (ID)**: 47A
**Technology Type**: SJ_Multi-EPI Technology
STW34NM60N-VB is a Super Junction The N-channel power MOSFET with Multi-EPI (SJ_Multi-EPI) technology has a high withstand voltage of 650V, a low on-resistance of 75mΩ and a high leakage current carrying capacity of 47A. Its superior performance makes it an ideal choice for applications such as high-efficiency switching power supplies, inverters, motor drives, and industrial power systems. It is particularly suitable for power conversion systems that require high withstand voltage, high current load, and low power loss.
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**Model**: STW34NM60N-VB
**Package Type**: TO247
**Configuration**: Single-N-Channel
**Maximum Drain-Source Voltage (VDS)**: 650V
**Maximum Gate-Source Voltage (VGS)**: ±30V
**Threshold Voltage (Vth)**: 3.5V
**On-Resistance (RDS(ON))**: 75mΩ @ VGS = 10V
**Maximum Drain Current (ID)**: 47A
**Technology Type**: SJ_Multi-EPI Technology
STW34NM60N-VB is a Super Junction The N-channel power MOSFET with Multi-EPI (SJ_Multi-EPI) technology has a high withstand voltage of 650V, a low on-resistance of 75mΩ and a high leakage current carrying capacity of 47A. Its superior performance makes it an ideal choice for applications such as high-efficiency switching power supplies, inverters, motor drives, and industrial power systems. It is particularly suitable for power conversion systems that require high withstand voltage, high current load, and low power loss.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | 75mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description:
1. **VDS (drain-source voltage)**: 650V
- The maximum drain-source voltage of STW34NM60N-VB is 650V, which is suitable for power conversion and power management systems in high-voltage environments and can work reliably under higher voltage conditions.
2. **VGS (gate-source voltage)**: ±30V
- The maximum gate-source voltage is ±30V, which ensures compatibility with most common drive circuits, allowing it to work stably in various application scenarios.
3. **Vth (threshold voltage)**: 3.5V
- The threshold voltage is 3.5V, which means that when the gate-source voltage exceeds this value, the MOSFET starts to turn on. A higher Vth is suitable for high-voltage drive systems.
4. **RDS(ON)**: 75mΩ @ VGS = 10V
- The on-resistance is 75mΩ. The low on-resistance ensures that when a large current flows, the power loss is small, providing higher conversion efficiency.
5. **ID(Drain Current)**: 47A
- The maximum drain current is 47A, indicating that the MOSFET can carry a large current load and is suitable for high-power applications.
6. **Technology**: SJ_Multi-EPI
- STW34NM60N-VB uses Super Junction Multi-EPI technology, which can optimize the switching speed and on-resistance of the power MOSFET, thereby improving the overall efficiency and reducing the switching loss. It is particularly suitable for high-efficiency power electronics applications.
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1. **VDS (drain-source voltage)**: 650V
- The maximum drain-source voltage of STW34NM60N-VB is 650V, which is suitable for power conversion and power management systems in high-voltage environments and can work reliably under higher voltage conditions.
2. **VGS (gate-source voltage)**: ±30V
- The maximum gate-source voltage is ±30V, which ensures compatibility with most common drive circuits, allowing it to work stably in various application scenarios.
3. **Vth (threshold voltage)**: 3.5V
- The threshold voltage is 3.5V, which means that when the gate-source voltage exceeds this value, the MOSFET starts to turn on. A higher Vth is suitable for high-voltage drive systems.
4. **RDS(ON)**: 75mΩ @ VGS = 10V
- The on-resistance is 75mΩ. The low on-resistance ensures that when a large current flows, the power loss is small, providing higher conversion efficiency.
5. **ID(Drain Current)**: 47A
- The maximum drain current is 47A, indicating that the MOSFET can carry a large current load and is suitable for high-power applications.
6. **Technology**: SJ_Multi-EPI
- STW34NM60N-VB uses Super Junction Multi-EPI technology, which can optimize the switching speed and on-resistance of the power MOSFET, thereby improving the overall efficiency and reducing the switching loss. It is particularly suitable for high-efficiency power electronics applications.
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Domain and module applications：
Applicable fields and module examples:
1. **Switching Power Supply (SMPS)**:
- STW34NM60N-VB is commonly used in switching power supplies (SMPS), especially in situations with high voltage and high current loads. Its 650V withstand voltage and low on-resistance enable it to perform well in the power conversion process, effectively reduce energy loss, and improve the overall efficiency of the system. It is especially suitable for high-power industrial power supplies, UPS power supplies, and server power supplies.
2. **Inverter Applications**:
- This MOSFET is widely used in the inverter field, especially in solar inverters, electric vehicle (EV) inverters, and wind power generation systems. Its 650V withstand voltage capability enables it to handle high voltage input signals, and its 47A leakage current carrying capacity ensures that it can stably handle larger currents from batteries or photovoltaic modules.
3. **Electric Vehicles (EV) and Charging Systems**:
- STW34NM60N-VB is suitable for power management modules of electric vehicles (EV) and charging systems. In the battery management system (BMS) and charging stations of electric vehicles, it can withstand high voltages and high currents, while its low on-resistance ensures higher charging efficiency and lower losses.
4. **Industrial Power Systems**:
- This MOSFET has been widely used in industrial power modules, DC-DC converters and high-efficiency power systems. Its 650V withstand voltage and 47A leakage current can handle high power loads, especially for industrial equipment that requires high efficiency, high current carrying and long-term stable operation.
5. **Motor Drive Systems**:
- STW34NM60N-VB is suitable for motor drive systems, especially in applications requiring high voltage and high current, such as power tools, electric pumps, electric fans, etc. This MOSFET can provide efficient power conversion and drive current, reduce heat and losses, and thus improve the overall performance of the drive system.
6. **High-voltage power electronic system**:
- In high-voltage power electronic systems, STW34NM60N-VB can work stably and undertake high-voltage and high-current power conversion tasks. It is widely used in power conversion equipment, power amplifiers, and other power electronic systems that require high voltage and high efficiency.
7. **Power factor correction (PFC) circuit**:
- In the power factor correction (PFC) circuit, STW34NM60N-VB helps improve system efficiency and reduce power loss with its 650V withstand voltage and low on-resistance. It is widely used in power electronic equipment to improve power factor and ensure the stability and high efficiency of the power grid.
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STW34NM60N-VB is an ideal choice for efficient power conversion and power management systems with its high withstand voltage of 650V, low on-resistance and high leakage current carrying capacity of 47A. It is particularly suitable for high-voltage, high-current application scenarios such as switching power supplies, inverters, electric vehicle charging systems, industrial power supplies, and motor drive systems. It performs well in high efficiency and low power loss, and widely serves various needs in the field of power electronics.
1. **Switching Power Supply (SMPS)**:
- STW34NM60N-VB is commonly used in switching power supplies (SMPS), especially in situations with high voltage and high current loads. Its 650V withstand voltage and low on-resistance enable it to perform well in the power conversion process, effectively reduce energy loss, and improve the overall efficiency of the system. It is especially suitable for high-power industrial power supplies, UPS power supplies, and server power supplies.
2. **Inverter Applications**:
- This MOSFET is widely used in the inverter field, especially in solar inverters, electric vehicle (EV) inverters, and wind power generation systems. Its 650V withstand voltage capability enables it to handle high voltage input signals, and its 47A leakage current carrying capacity ensures that it can stably handle larger currents from batteries or photovoltaic modules.
3. **Electric Vehicles (EV) and Charging Systems**:
- STW34NM60N-VB is suitable for power management modules of electric vehicles (EV) and charging systems. In the battery management system (BMS) and charging stations of electric vehicles, it can withstand high voltages and high currents, while its low on-resistance ensures higher charging efficiency and lower losses.
4. **Industrial Power Systems**:
- This MOSFET has been widely used in industrial power modules, DC-DC converters and high-efficiency power systems. Its 650V withstand voltage and 47A leakage current can handle high power loads, especially for industrial equipment that requires high efficiency, high current carrying and long-term stable operation.
5. **Motor Drive Systems**:
- STW34NM60N-VB is suitable for motor drive systems, especially in applications requiring high voltage and high current, such as power tools, electric pumps, electric fans, etc. This MOSFET can provide efficient power conversion and drive current, reduce heat and losses, and thus improve the overall performance of the drive system.
6. **High-voltage power electronic system**:
- In high-voltage power electronic systems, STW34NM60N-VB can work stably and undertake high-voltage and high-current power conversion tasks. It is widely used in power conversion equipment, power amplifiers, and other power electronic systems that require high voltage and high efficiency.
7. **Power factor correction (PFC) circuit**:
- In the power factor correction (PFC) circuit, STW34NM60N-VB helps improve system efficiency and reduce power loss with its 650V withstand voltage and low on-resistance. It is widely used in power electronic equipment to improve power factor and ensure the stability and high efficiency of the power grid.
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STW34NM60N-VB is an ideal choice for efficient power conversion and power management systems with its high withstand voltage of 650V, low on-resistance and high leakage current carrying capacity of 47A. It is particularly suitable for high-voltage, high-current application scenarios such as switching power supplies, inverters, electric vehicle charging systems, industrial power supplies, and motor drive systems. It performs well in high efficiency and low power loss, and widely serves various needs in the field of power electronics.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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