STW32N65M5-VB Product details
Product introduction:
**STW32N65M5-VB** is a high-performance N-channel MOSFET in TO247 package, using SJ_Multi-EPI technology, with 700V V_DS (drain-source voltage) and 47A rated drain current. This MOSFET features low R_DS(ON), up to 80mΩ @ V_GS = 10V, suitable for high-efficiency power conversion and switching applications, especially in applications requiring high voltage and high efficiency.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 700V | 3.5V | 47A | 80mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 700V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 700V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
- **Model**: STW32N65M5-VB
- **Package**: TO247
- **Configuration**: Unipolar N-channel
- **Drain-source voltage (V_DS)**: 700V
- **Gate-source voltage (V_GS)**: ±30V
- **Threshold voltage (V_th)**: 3.5V
- **R_DS(ON)**: 80mΩ @ V_GS = 10V
- **Drain current (I_D)**: 47A
- **Technology**: SJ_Multi-EPI (Super Junction Multi-EPI)
The SJ_Multi-EPI technology used in this MOSFET enables it to have excellent switching performance and low conduction loss in high voltage applications, which can improve the overall efficiency of the system, especially in power management and high power conversion.
Domain and module applications:
1. **Power management modules**:
- In power adapters, DC-DC converters, AC-DC power supplies and UPS systems, the STW32N65M5-VB can be used as the main switching device to support efficient power conversion. Its high withstand voltage characteristics and low on-resistance ensure stability and high efficiency in high-voltage working environments.
2. **Electric vehicle (EV) charging system**:
- Due to its high voltage capability (700V), the STW32N65M5-VB is suitable for high-voltage battery management and battery charging conversion in electric vehicle charging systems. Its low R_DS(ON) can reduce energy loss and improve charging efficiency.
3. **High power conversion applications**:
- In applications that need to withstand high power and current, such as inverters, wind power and solar cell power systems, the STW32N65M5-VB is an ideal switching device. It can maintain low-loss performance at high voltage and high current, optimizing power conversion efficiency.
4. **Industrial Equipment**:
- This MOSFET is also suitable for motor drives, power systems and high-power switching devices in the industrial field, especially in situations where high voltage resistance and high efficiency are required. It can effectively reduce the heat loss of the system and improve the system stability and reliability.
5. **Consumer Electronics**:
- In some high-efficiency power supply designs, such as high-end home appliances, computer power modules, etc., the high-efficiency switching capability of STW32N65M5-VB makes it an ideal choice, especially in electronic products that require high voltage tolerance and low power consumption.
Technical support:
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