STW30NM60N-VB Product details
Product introduction:
**STW30NM60N-VB** is a **single N-channel MOSFET** in **TO247 package**, based on **SJ_Multi-EPI technology**, with **650V** drain-source voltage (Vds) and **47A** drain current (Id). This MOSFET has a low on-resistance (Rds(on)) of **75mΩ**, which is particularly suitable for high-voltage, high-current applications, with excellent switching performance and low conduction losses, ensuring efficient operation in high-power systems. Its high **650V** voltage tolerance and low **Rds(on)** give it a wide range of application prospects in power conversion, inverters, motor drives and other fields. Through **SJ_Multi-EPI technology**, this MOSFET provides efficient thermal management and reliable performance, which is very suitable for high-power power electronic equipment.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | 75mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
- **Package type**: TO247
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (Vds)**: 650V
- **Maximum gate-source voltage (Vgs)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (Rds(on))**:
- @Vgs = 10V: 75mΩ
- **Maximum drain current (Id)**: 47A
- **Maximum power dissipation (Pd)**: About 150W (the specific value depends on the working conditions)
- **Input capacitance (Ciss)**: About 1700pF @ Vds = 200V
- **Output capacitance (Coss)**: About 150pF @ Vds = 200V
- **Reverse Recovery Time (Trr)**: 200ns max.
- **Operating Temperature Range**: -55°C to +150°C
- **Technology**: SJ_Multi-EPI (Enhanced Multi-Junction Field Effect Transistor Technology)
Domain and module applications:
1. **Power converter**
Since **STW30NM60N-VB** has **650V** high withstand voltage capability and **47A** high current carrying capacity, it is widely used in high-power power converters, especially **AC-DC converter** and **DC-DC converter**. Its low on-resistance ensures efficient power conversion and reduces power loss, and is suitable for power adapters, industrial power supplies and high-efficiency battery chargers.
2. **Solar inverter**
**STW30NM60N-VB** performs well in **solar inverter**, which can efficiently convert the DC power of solar panels into AC power and achieve high-efficiency energy conversion. The **650V** voltage capability and **47A** current carrying capacity of this MOSFET make it particularly suitable for applications in high-power solar systems and home solar power generation systems, ensuring stable output power and low loss.
3. **Motor drive**
In **motor drive systems**, **STW30NM60N-VB** provides powerful current control capabilities, which can accurately adjust the drive voltage and current of the motor. It is widely used in **industrial motor control** and **power tools** and other fields. Especially in applications that require high efficiency and fast response, this MOSFET ensures efficient starting, stopping and speed regulation of the motor.
4. **Electric vehicle (EV) charger**
**STW30NM60N-VB** is suitable for **electric vehicle (EV) charger**, as a switching element to efficiently handle high current and high voltage. During the fast charging process of electric vehicles, this MOSFET can effectively improve the charging efficiency and optimize the battery charging management system to ensure stable current output and battery protection.
5. **Uninterruptible Power Supply (UPS)**
In the **UPS (Uninterruptible Power Supply)** system, **STW30NM60N-VB** acts as a switching element, which can quickly switch to the backup power supply when the power is interrupted. The high voltage tolerance and low conduction loss of this MOSFET enable the UPS system to provide power efficiently and stably, thereby ensuring the safe operation of the equipment. It is particularly suitable for power protection in **data centers** and **critical application equipment**.
6. **High-efficiency Switching Power Supply (SMPS)**
**STW30NM60N-VB** acts as a switching element in the **high-efficiency switching power supply (SMPS)**, which can effectively improve the conversion efficiency and reduce the switching loss. It is suitable for use in **computer power supplies**, **consumer electronics power supplies** and **industrial power modules** to ensure the stable conversion and efficient transmission of electrical energy.
7. **Power drive system**
In **power drive systems**, **STW30NM60N-VB** provides stable current control and efficient power conversion, and can efficiently drive large power equipment. Especially in **industrial equipment** and **automation control systems**, this MOSFET plays an important role as a switching element, ensuring the efficient operation of the power system.
8. **Lighting control system**
**STW30NM60N-VB** is also widely used in **LED drive and lighting control systems** to ensure stable output of current and voltage, and adjust the brightness and energy efficiency of LED lamps. In **commercial lighting** and **outdoor lighting systems**, this MOSFET can provide efficient power control, reduce energy waste, and extend the service life of lighting equipment.
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