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STW21NM60ND-VB Product details

Product introduction:

1. Product Introduction

**STW21NM60ND-VB** is a high-voltage, high-current carrying N-Channel MOSFET in a **TO247** package with a drain-source voltage (V_DS) of 650V and a maximum drain current (I_D) of 20A. Its gate-source voltage (V_GS) is ±30V and it uses **SJ_Multi-EPI** technology, which enables it to provide excellent performance in high-voltage environments. Its on-resistance is 160mΩ (@ V_GS = 10V), which enables it to exhibit low energy loss in power switching and power conversion applications.

This MOSFET is suitable for various applications that require high-voltage tolerance and high-efficiency power switching, especially in high-power applications such as power electronics, industrial power supplies, motor control and inverters. It can operate stably in a high-voltage working environment to meet the needs of efficient power conversion.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO247 Single-N 650V 3.5V 20A 160mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO247 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO247 Single-N 650V 3.5V 20A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO247 Single-N 650V 3.5V 20A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO247 Single-N
2. Detailed parameter description

- **Model**: STW21NM60ND-VB
- **Package type**: TO247
- **Configuration**: Single-N-Channel
- **Drain-source voltage (V_DS)**: 650V
- **Gate-source voltage (V_GS)**: ±30V
- **Threshold voltage (V_th)**: 3.5V
- **On-resistance (R_DS(ON))**:
- 160mΩ @ V_GS = 10V
- **Maximum leakage current (I_D)**: 20A
- **Maximum power dissipation (P_D)**: 150W
- **Input capacitance (C_GS)**: 1100pF
- **Output capacitance (C_GD)**: 400pF
- **Reverse Recovery Time (t_rr)**: 150ns
- **Junction Temperature Range**: -55°C to +150°C
- **Technology Type**: SJ_Multi-EPI
- **Package Type**: TO247
- **Maximum Junction Temperature**: 150°C

Domain and module applications:

3. Application fields and module examples

**STW21NM60ND-VB** performs well in multiple high-power applications, especially in the following fields and modules:

1. **High-efficiency power switches and DC-DC converters**:
Due to its high withstand voltage of 650V and maximum current carrying capacity of 20A, **STW21NM60ND-VB** is very suitable for high-efficiency power converters, especially in applications that require high voltage and high current processing, such as power management systems, motor drive systems, etc. The low on-resistance (160mΩ) of this MOSFET enables it to have lower energy loss in switching power supplies, which can improve the efficiency of the system.

2. **Inverter and renewable energy applications**:
In inverters for renewable energy sources such as solar and wind power, **STW21NM60ND-VB** is used as a power switch component to effectively convert DC power into AC power, and is particularly suitable for high voltage and high power conversion. The 650V withstand voltage makes it particularly suitable for photovoltaic system inverters to provide efficient power output and reduce heat loss in the system.

3. **Motor drive and control system**:
**STW21NM60ND-VB** can also be widely used in motor drive systems, such as power tools, electric vehicle (EV) drive systems, etc. Its stable performance and low on-resistance under high current working conditions enable it to efficiently switch current in motor control and drive circuits to ensure system reliability and efficiency.

4. **Industrial power management system**:
This MOSFET is very suitable for industrial power management systems that require high withstand voltage and high-efficiency power conversion, especially in AC-DC and DC-DC converters. High withstand voltage and low on-resistance enable it to efficiently regulate current while reducing heat generation, improving the stability and reliability of the overall system.

5. **UPS (Uninterruptible Power Supply) System**:
**STW21NM60ND-VB** can be used in UPS systems as a key power switching element to ensure a stable power supply during power outages or power fluctuations. Its high efficiency and high voltage tolerance can ensure stable operation in uninterruptible power supply applications and meet the high requirements of precision equipment for power quality and continuity.

6. **Battery Management System (BMS)**:
**STW21NM60ND-VB** can be used in battery management systems (BMS), especially in scenarios requiring high-voltage battery packs and high-current charging and discharging. Whether in electric vehicles or energy storage systems, this MOSFET ensures efficient and stable power control of the battery during charging and discharging.

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

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