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STW20NM60-VB Product details
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Product Introduction: STW20NM60-VB
**Model**: STW20NM60-VB
**Package Type**: TO247
**Configuration**: Single-N-Channel
**Maximum Drain-Source Voltage (VDS)**: 650V
**Maximum Gate-Source Voltage (VGS)**: ±30V
**Threshold Voltage (Vth)**: 3.5V
**On-Resistance (RDS(ON))**: 300mΩ @ VGS = 10V
**Maximum Drain Current (ID)**: 15A
**Technology Type**: SJ_Multi-EPI Technology
STW20NM60-VB is a high-voltage N-channel MOSFET with a maximum drain-source voltage of 650V, which is widely used in high-voltage power conversion, inverters, electric vehicles and other fields. The device uses Super Junction Multi-EPI (SJ_Multi-EPI) technology to provide low on-resistance and high current carrying capacity. Its design goal is to optimize power conversion efficiency in high voltage environments and reduce system heating through low conduction losses to improve overall energy efficiency. This product is particularly suitable for use in industrial, energy and high-power systems to meet the requirements of high performance and high reliability.
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**Model**: STW20NM60-VB
**Package Type**: TO247
**Configuration**: Single-N-Channel
**Maximum Drain-Source Voltage (VDS)**: 650V
**Maximum Gate-Source Voltage (VGS)**: ±30V
**Threshold Voltage (Vth)**: 3.5V
**On-Resistance (RDS(ON))**: 300mΩ @ VGS = 10V
**Maximum Drain Current (ID)**: 15A
**Technology Type**: SJ_Multi-EPI Technology
STW20NM60-VB is a high-voltage N-channel MOSFET with a maximum drain-source voltage of 650V, which is widely used in high-voltage power conversion, inverters, electric vehicles and other fields. The device uses Super Junction Multi-EPI (SJ_Multi-EPI) technology to provide low on-resistance and high current carrying capacity. Its design goal is to optimize power conversion efficiency in high voltage environments and reduce system heating through low conduction losses to improve overall energy efficiency. This product is particularly suitable for use in industrial, energy and high-power systems to meet the requirements of high performance and high reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 15A | 300mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description:
1. **VDS (drain-source voltage)**: 650V
- STW20NM60-VB supports a maximum drain-source voltage of 650V, which is suitable for high-voltage applications such as high-voltage power supplies and inverters. Its voltage resistance ensures stable operation in high-voltage applications.
2. **VGS (gate-source voltage)**: ±30V
- The maximum gate-source voltage is ±30V, providing greater design flexibility and suitable for a variety of drive circuits and control systems.
3. **Vth (threshold voltage)**: 3.5V
- The threshold voltage is 3.5V, which means that the MOSFET starts to conduct when the gate-source voltage is 3.5V, which is suitable for circuit designs requiring higher gate voltages.
4. **RDS(ON)（On-resistance）**: 300mΩ @ VGS = 10V
- The on-resistance is 300mΩ, which provides lower conduction loss, reduces power loss in the on state, and helps improve the overall power conversion efficiency.
5. **ID（Drainage Current）**: 15A
- The maximum leakage current is 15A, which means that this MOSFET can be used in medium and high current applications and is suitable for power modules that require a large current carrying capacity.
6. **Technology**: SJ_Multi-EPI
- Using Super Junction Multi-EPI technology, it can effectively reduce the on-resistance (RDS(ON)) and provide a higher current carrying capacity, optimizing the efficiency and thermal management during the power conversion process.
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1. **VDS (drain-source voltage)**: 650V
- STW20NM60-VB supports a maximum drain-source voltage of 650V, which is suitable for high-voltage applications such as high-voltage power supplies and inverters. Its voltage resistance ensures stable operation in high-voltage applications.
2. **VGS (gate-source voltage)**: ±30V
- The maximum gate-source voltage is ±30V, providing greater design flexibility and suitable for a variety of drive circuits and control systems.
3. **Vth (threshold voltage)**: 3.5V
- The threshold voltage is 3.5V, which means that the MOSFET starts to conduct when the gate-source voltage is 3.5V, which is suitable for circuit designs requiring higher gate voltages.
4. **RDS(ON)（On-resistance）**: 300mΩ @ VGS = 10V
- The on-resistance is 300mΩ, which provides lower conduction loss, reduces power loss in the on state, and helps improve the overall power conversion efficiency.
5. **ID（Drainage Current）**: 15A
- The maximum leakage current is 15A, which means that this MOSFET can be used in medium and high current applications and is suitable for power modules that require a large current carrying capacity.
6. **Technology**: SJ_Multi-EPI
- Using Super Junction Multi-EPI technology, it can effectively reduce the on-resistance (RDS(ON)) and provide a higher current carrying capacity, optimizing the efficiency and thermal management during the power conversion process.
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Domain and module applications：
Applicable fields and module examples:
1. **High-voltage power supply system**:
STW20NM60-VB is suitable for high-voltage power supply systems such as switching power supplies, DC-DC converters (DC-DC), AC-DC converters (AC-DC). The 650V withstand voltage ensures that it can work stably in high-voltage power supplies and provide low conduction losses to improve system efficiency.
2. **Inverter applications (Inverters)**:
This MOSFET is widely used in solar inverters, electric vehicle inverters, wind power inverters and other fields. The high withstand voltage of 650V enables it to withstand higher voltages during power conversion and is suitable for high-power, high-voltage inverter applications.
3. **Motor drive system**:
In motor drive systems (such as industrial motors, power tool drives, HVAC systems, etc.), STW20NM60-VB can provide stable current drive. Its maximum leakage current capability of 15A and low on-resistance of 300mΩ make it an excellent performer in motor control that requires high power and high current.
4. **Electric Vehicles and Charging Stations**:
STW20NM60-VB is very suitable for applications such as electric vehicle (EV) charging systems, electric vehicle inverters, and battery management systems (BMS). The withstand voltage of 650V and the current carrying capacity of 15A can meet the high voltage and high current requirements in electric vehicle charging and drive systems, ensuring the efficient and safe operation of the power system.
5. **Industrial Power Modules**:
In the industrial field, STW20NM60-VB is widely used in power modules, switching power supplies, and power regulators. Its high withstand voltage and low conduction loss characteristics make it an indispensable component in efficient power management systems.
6. **High-efficiency Switching Power Supply (SMPS)**:
As the main switching element in SMPS, STW20NM60-VB provides high-efficiency power conversion and is suitable for high-efficiency switching power supply designs such as TVs, home appliances, and computer power supplies. Its low on-resistance and high withstand voltage enable it to operate efficiently under high-frequency, high-power working conditions.
7. **Home Appliances and Consumer Electronics**:
In power modules for home appliances (such as refrigerators, air conditioners) and consumer electronics, STW20NM60-VB can effectively convert and manage power, improve energy efficiency and reduce equipment heat generation. Its high withstand voltage and low loss characteristics make it ideal in these applications.
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**STW20NM60-VB** is a MOSFET that performs well in high-voltage, high-current applications with its high withstand voltage capability of 650V, 300mΩ on-resistance, and 15A current carrying capacity. It is widely used in many fields such as high voltage power supply, inverter, motor drive, electric vehicle charging system, industrial power module, etc. Its high efficiency and low loss characteristics make it an ideal choice in systems requiring high voltage, low loss and high reliability.
1. **High-voltage power supply system**:
STW20NM60-VB is suitable for high-voltage power supply systems such as switching power supplies, DC-DC converters (DC-DC), AC-DC converters (AC-DC). The 650V withstand voltage ensures that it can work stably in high-voltage power supplies and provide low conduction losses to improve system efficiency.
2. **Inverter applications (Inverters)**:
This MOSFET is widely used in solar inverters, electric vehicle inverters, wind power inverters and other fields. The high withstand voltage of 650V enables it to withstand higher voltages during power conversion and is suitable for high-power, high-voltage inverter applications.
3. **Motor drive system**:
In motor drive systems (such as industrial motors, power tool drives, HVAC systems, etc.), STW20NM60-VB can provide stable current drive. Its maximum leakage current capability of 15A and low on-resistance of 300mΩ make it an excellent performer in motor control that requires high power and high current.
4. **Electric Vehicles and Charging Stations**:
STW20NM60-VB is very suitable for applications such as electric vehicle (EV) charging systems, electric vehicle inverters, and battery management systems (BMS). The withstand voltage of 650V and the current carrying capacity of 15A can meet the high voltage and high current requirements in electric vehicle charging and drive systems, ensuring the efficient and safe operation of the power system.
5. **Industrial Power Modules**:
In the industrial field, STW20NM60-VB is widely used in power modules, switching power supplies, and power regulators. Its high withstand voltage and low conduction loss characteristics make it an indispensable component in efficient power management systems.
6. **High-efficiency Switching Power Supply (SMPS)**:
As the main switching element in SMPS, STW20NM60-VB provides high-efficiency power conversion and is suitable for high-efficiency switching power supply designs such as TVs, home appliances, and computer power supplies. Its low on-resistance and high withstand voltage enable it to operate efficiently under high-frequency, high-power working conditions.
7. **Home Appliances and Consumer Electronics**:
In power modules for home appliances (such as refrigerators, air conditioners) and consumer electronics, STW20NM60-VB can effectively convert and manage power, improve energy efficiency and reduce equipment heat generation. Its high withstand voltage and low loss characteristics make it ideal in these applications.
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**STW20NM60-VB** is a MOSFET that performs well in high-voltage, high-current applications with its high withstand voltage capability of 650V, 300mΩ on-resistance, and 15A current carrying capacity. It is widely used in many fields such as high voltage power supply, inverter, motor drive, electric vehicle charging system, industrial power module, etc. Its high efficiency and low loss characteristics make it an ideal choice in systems requiring high voltage, low loss and high reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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