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STW19NM50N-VB Product details

Product introduction:

STW19NM50N-VB MOSFET Product Introduction

The STW19NM50N-VB is a high-voltage, single N-channel MOSFET in a TO247 package with a drain-source voltage (VDS) of 500V and a gate-source voltage (VGS) range of ±30V. The MOSFET uses advanced SJ_Multi-EPI technology to provide efficient switching performance and stability in high voltage and high current environments. Its on-resistance (RDS(ON)) is 80mΩ@VGS=10V, and the maximum drain current (ID) can reach 40A, which is suitable for high-power and high-voltage electronic systems.

The STW19NM50N-VB has good thermal management characteristics and switching efficiency, and is suitable for applications that require high voltage carrying capacity and low conduction losses, such as power electronics, power conversion, and industrial control systems.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO247 Single-N 500V 3.8V 40A 80mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO247 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO247 Single-N 500V 3.8V 40A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO247 Single-N 500V 3.8V 40A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO247 Single-N
Detailed parameter description

- **Package**: TO247
- **Configuration**: Single-N-Channel
- **Drain-Source Voltage (VDS)**: 500V
- **Gate-Source Voltage (VGS)**: ±30V
- **Threshold Voltage (Vth)**: 3.8V
- **On-Resistance (RDS(ON))**: 80mΩ @ VGS = 10V
- **Maximum Drain Current (ID)**: 40A
- **Technology**: SJ_Multi-EPI

Domain and module applications:

Applications and module examples: 1. **High Voltage Power Supplies**:
The 500V withstand voltage of STW19NM50N-VB makes it very suitable for high voltage power supply systems. Especially in medium and high power switching power supplies (SMPS), this MOSFET can handle higher voltages, and the low on-resistance can effectively reduce power losses and improve power efficiency. It can maintain stable performance under high load conditions and is widely used in industrial power supplies, data center power supplies, and laboratory power supplies.

2. **Inverters**:
STW19NM50N-VB is suitable for various inverter applications, especially in solar inverters, electric vehicle drive inverters, and UPS systems. Because it can withstand drain-source voltages up to 500V, it can work stably in high voltage environments, support the improvement of power conversion efficiency, and ensure smooth operation in electric equipment or renewable energy systems.

3. **Power Electronics**:
In power electronics systems, the STW19NM50N-VB can be used for high-power current switches and converters. Whether it is used in power factor correction (PFC) circuits, AC drive systems or DC converters, the high withstand voltage and good switching performance of this MOSFET make it an ideal choice for high-efficiency power conversion systems.

4. **Motor Drives and Power Tools**:
STW19NM50N-VB is particularly suitable for high-current drive power tools and motor drive applications due to its high current carrying capacity (up to 40A) and low on-resistance. It can operate efficiently in the battery management system and electric motor drive circuit of power tools, ensuring the reliability and efficiency of the equipment and extending its service life.

5. **Solar Inverters**:
In solar photovoltaic power generation systems, STW19NM50N-VB can be used as one of the core power conversion components of photovoltaic inverters. It can work stably at high voltage and convert solar energy into AC power through the inverter, meeting the high power and high efficiency requirements of solar power stations.

6. **Battery Chargers & Management Systems**:
Due to the high voltage resistance and high current handling capabilities of STW19NM50N-VB, it is also suitable for battery chargers and battery management systems, especially charging and protection management systems for lithium batteries or other high energy density batteries that need to handle high voltage and high current.

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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