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STW18NM60N-VB Product details
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Product Introduction: STW18NM60N-VB
**Model**: STW18NM60N-VB
**Package Type**: TO247
**Configuration**: Single-N-Channel
**Maximum Drain-Source Voltage (VDS)**: 650V
**Maximum Gate-Source Voltage (VGS)**: ±30V
**Threshold Voltage (Vth)**: 3.5V
**On-Resistance (RDS(ON))**: 300mΩ @ VGS = 10V
**Maximum Drain Current (ID)**: 15A
**Technology Type**: SJ_Multi-EPI Technology
The STW18NM60N-VB is a high-voltage N-channel MOSFET with a maximum drain-source voltage of 650V, suitable for high-voltage power conversion, inverters, industrial drives and electric vehicles. The device uses Super Junction Multi-EPI (SJ_Multi-EPI) technology, with low on-resistance (RDS(ON)) and high current carrying capacity (ID = 15A), which can provide excellent performance in high voltage and high power applications. The design of STW18NM60N-VB ensures low losses in high-efficiency power conversion and is suitable for applications requiring high withstand voltage and low conduction loss.
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**Model**: STW18NM60N-VB
**Package Type**: TO247
**Configuration**: Single-N-Channel
**Maximum Drain-Source Voltage (VDS)**: 650V
**Maximum Gate-Source Voltage (VGS)**: ±30V
**Threshold Voltage (Vth)**: 3.5V
**On-Resistance (RDS(ON))**: 300mΩ @ VGS = 10V
**Maximum Drain Current (ID)**: 15A
**Technology Type**: SJ_Multi-EPI Technology
The STW18NM60N-VB is a high-voltage N-channel MOSFET with a maximum drain-source voltage of 650V, suitable for high-voltage power conversion, inverters, industrial drives and electric vehicles. The device uses Super Junction Multi-EPI (SJ_Multi-EPI) technology, with low on-resistance (RDS(ON)) and high current carrying capacity (ID = 15A), which can provide excellent performance in high voltage and high power applications. The design of STW18NM60N-VB ensures low losses in high-efficiency power conversion and is suitable for applications requiring high withstand voltage and low conduction loss.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 15A | 300mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description:
1. **VDS (drain-source voltage)**: 650V
- STW18NM60N-VB has a maximum drain-source voltage of 650V, which can handle high voltage loads and is suitable for high voltage applications such as power conversion and motor drive.
2. **VGS (gate-source voltage)**: ±30V
- The maximum gate-source voltage is ±30V, allowing a wide control voltage range, suitable for a variety of drive circuits.
3. **Vth (threshold voltage)**: 3.5V
- The threshold voltage of this MOSFET is 3.5V, which means that when the gate-source voltage reaches 3.5V, the device will start to turn on, which is suitable for circuit designs that require a higher turn-on voltage.
4. **RDS(ON) (On-resistance)**: 300mΩ @ VGS = 10V
- The on-resistance is 300mΩ, which provides lower conduction losses compared to other similar products, improves efficiency and reduces heat generation.
5. **ID (Drain Current)**: 15A
- The maximum drain current is 15A, indicating that this MOSFET can carry medium current loads and is suitable for high current applications.
6. **Technology**: SJ_Multi-EPI Technology
- Using Super Junction Multi-EPI (SJ_Multi-EPI) technology, this technology can provide lower on-resistance (RDS(ON)) and higher current carrying capacity, optimizing power conversion efficiency.
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1. **VDS (drain-source voltage)**: 650V
- STW18NM60N-VB has a maximum drain-source voltage of 650V, which can handle high voltage loads and is suitable for high voltage applications such as power conversion and motor drive.
2. **VGS (gate-source voltage)**: ±30V
- The maximum gate-source voltage is ±30V, allowing a wide control voltage range, suitable for a variety of drive circuits.
3. **Vth (threshold voltage)**: 3.5V
- The threshold voltage of this MOSFET is 3.5V, which means that when the gate-source voltage reaches 3.5V, the device will start to turn on, which is suitable for circuit designs that require a higher turn-on voltage.
4. **RDS(ON) (On-resistance)**: 300mΩ @ VGS = 10V
- The on-resistance is 300mΩ, which provides lower conduction losses compared to other similar products, improves efficiency and reduces heat generation.
5. **ID (Drain Current)**: 15A
- The maximum drain current is 15A, indicating that this MOSFET can carry medium current loads and is suitable for high current applications.
6. **Technology**: SJ_Multi-EPI Technology
- Using Super Junction Multi-EPI (SJ_Multi-EPI) technology, this technology can provide lower on-resistance (RDS(ON)) and higher current carrying capacity, optimizing power conversion efficiency.
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Domain and module applications：
Applicable fields and module examples:
1. **High-voltage power supply system**:
STW18NM60N-VB is suitable for high-voltage power supply systems, such as switching power supplies (SMPS) and DC power supply modules. Its high withstand voltage of 650V enables it to meet the power conversion requirements in high-voltage environments, while its low on-resistance (RDS(ON)) helps improve overall system efficiency.
2. **Inverter applications (Inverters)**:
This MOSFET is widely used in high-voltage power conversion equipment such as solar inverters, wind power inverters, and electric vehicle inverters. The 650V withstand voltage enables it to withstand the high voltage in the operation of the inverter and provide stable power conversion efficiency, especially suitable for high-power and high-current inverter designs.
3. **Motor drive**:
STW18NM60N-VB performs well in motor drive systems, especially in applications with high voltage and high current requirements (such as industrial motor drives, power tool drives, etc.). Its maximum leakage current capability of 15A ensures the reliability and efficiency of high current drive.
4. **Industrial Power Module**:
In the power regulation and conversion system in the industrial field, the high voltage carrying capacity and low on-resistance of STW18NM60N-VB make it an ideal switching element. It can provide stable power supply for industrial equipment in a high voltage environment, reduce energy loss and improve system efficiency.
5. **Electric Vehicles and Charging Stations**:
In the power control system of electric vehicles and charging stations, STW18NM60N-VB, as a power switching element, can provide stable power conversion and support the efficient operation of the battery management system (BMS) and charging management system of electric vehicles. Its 650V withstand voltage capability and 15A current carrying capacity can meet the needs of high-power charging and driving.
6. **Power Regulation and Battery Management System**:
Suitable for power regulation, battery management system (BMS) and high-efficiency battery charging and discharging control system. The STW18NM60N-VB ensures the stability and efficiency of the battery management system under high power demand through its excellent switching performance.
7. **Switching Power Supply (SMPS)**:
In high-frequency switching power supplies, the STW18NM60N-VB provides excellent switching performance and low conduction losses, and is suitable for use in power conversion, buck or boost modules, especially for stability and efficiency requirements in high-voltage applications.
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**STW18NM60N-VB** is a MOSFET that performs well in high-voltage and high-current applications with its high withstand voltage capability of 650V, low on-resistance of 300mΩ and current carrying capacity of 15A. It has a wide range of applications and is suitable for use in high-voltage power systems, inverters, motor drives, industrial power supplies, automotive electronics, switching power supplies and other fields, providing stable and reliable performance.
1. **High-voltage power supply system**:
STW18NM60N-VB is suitable for high-voltage power supply systems, such as switching power supplies (SMPS) and DC power supply modules. Its high withstand voltage of 650V enables it to meet the power conversion requirements in high-voltage environments, while its low on-resistance (RDS(ON)) helps improve overall system efficiency.
2. **Inverter applications (Inverters)**:
This MOSFET is widely used in high-voltage power conversion equipment such as solar inverters, wind power inverters, and electric vehicle inverters. The 650V withstand voltage enables it to withstand the high voltage in the operation of the inverter and provide stable power conversion efficiency, especially suitable for high-power and high-current inverter designs.
3. **Motor drive**:
STW18NM60N-VB performs well in motor drive systems, especially in applications with high voltage and high current requirements (such as industrial motor drives, power tool drives, etc.). Its maximum leakage current capability of 15A ensures the reliability and efficiency of high current drive.
4. **Industrial Power Module**:
In the power regulation and conversion system in the industrial field, the high voltage carrying capacity and low on-resistance of STW18NM60N-VB make it an ideal switching element. It can provide stable power supply for industrial equipment in a high voltage environment, reduce energy loss and improve system efficiency.
5. **Electric Vehicles and Charging Stations**:
In the power control system of electric vehicles and charging stations, STW18NM60N-VB, as a power switching element, can provide stable power conversion and support the efficient operation of the battery management system (BMS) and charging management system of electric vehicles. Its 650V withstand voltage capability and 15A current carrying capacity can meet the needs of high-power charging and driving.
6. **Power Regulation and Battery Management System**:
Suitable for power regulation, battery management system (BMS) and high-efficiency battery charging and discharging control system. The STW18NM60N-VB ensures the stability and efficiency of the battery management system under high power demand through its excellent switching performance.
7. **Switching Power Supply (SMPS)**:
In high-frequency switching power supplies, the STW18NM60N-VB provides excellent switching performance and low conduction losses, and is suitable for use in power conversion, buck or boost modules, especially for stability and efficiency requirements in high-voltage applications.
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**STW18NM60N-VB** is a MOSFET that performs well in high-voltage and high-current applications with its high withstand voltage capability of 650V, low on-resistance of 300mΩ and current carrying capacity of 15A. It has a wide range of applications and is suitable for use in high-voltage power systems, inverters, motor drives, industrial power supplies, automotive electronics, switching power supplies and other fields, providing stable and reliable performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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