STW15N80K5-VB Product details
Product introduction:
**Model**: STW15N80K5-VB
**Package Type**: TO247
**Configuration**: Single-N-Channel
**Maximum Drain-Source Voltage (VDS)**: 800V
**Maximum Gate-Source Voltage (VGS)**: ±30V
**Threshold Voltage (Vth)**: 3.5V
**On-Resistance (RDS(ON))**: 370mΩ @ VGS = 10V
**Maximum Drain Current (ID)**: 15A
**Technology Type**: SJ_Multi-EPI Technology
The STW15N80K5-VB is a high-voltage, low on-resistance N-channel MOSFET in a TO247 package that can withstand drain-source voltages up to 800V, making it suitable for high-power, high-efficiency power conversion and switching circuits. Based on Super Junction Multi-EPI (SJ_Multi-EPI) technology, the device features low RDS(ON) and excellent current carrying capacity, ensuring efficient power conversion and regulation in high-voltage environments. The STW15N80K5-VB is widely used in power systems, inverters, industrial drives, switching power supplies, and other fields, providing stable and reliable performance and low power loss.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 15A | 370mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
1. **VDS (drain-source voltage)**: 800V
- The maximum drain-source voltage is 800V, which is suitable for high voltage applications such as power systems, inverters, industrial drives, etc. It can work stably in a large voltage environment and has excellent anti-breakthrough capability.
2. **VGS (gate-source voltage)**: ±30V
- The maximum gate-source voltage is ±30V, which ensures a wide control voltage range for the MOSFET and can adapt to a variety of different drive voltage requirements.
3. **Vth (threshold voltage)**: 3.5V
- The threshold voltage of this MOSFET is 3.5V, which means that when the gate-source voltage reaches 3.5V, the device starts to turn on, which is suitable for circuit designs that require higher turn-on voltages.
4. **RDS(ON) (On-resistance)**: 370mΩ @ VGS = 10V
- The on-resistance is 370mΩ, providing lower conduction losses, helping to improve system efficiency and reduce heat generation. Suitable for high-efficiency switching applications requiring low power consumption.
5. **ID (Drain Current)**: 15A
- The maximum drain current is 15A, indicating that this MOSFET can handle medium power level loads and is suitable for power switching in high current applications.
6. **Technology**: SJ_Multi-EPI Technology
- Using Super Junction Multi-EPI (SJ_Multi-EPI) technology, it has lower on-resistance and higher current carrying capability, suitable for providing stable performance in high voltage, high current and high frequency applications.
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Domain and module applications:
1. **High-voltage power supply system**:
STW15N80K5-VB is suitable for high-voltage power supply systems, such as switching power supplies (SMPS), DC power supplies, power converters, etc. Its 800V withstand voltage can meet the needs of large voltage loads and is suitable for the design of high-efficiency power supplies, reducing energy losses and improving system efficiency.
2. **Inverters**:
In inverter applications such as solar inverters, motor drive systems, UPS (uninterruptible power supply), STW15N80K5-VB shows excellent performance. Its high withstand voltage (800V) and low on-resistance (370mΩ) ensure that the inverter can work efficiently and provide stable power conversion, especially suitable for use in high-frequency switching and high-voltage environments.
3. **Motor drive system**:
Motor drives often require efficient power conversion in a high voltage environment. The STW15N80K5-VB has sufficient current carrying capacity and high voltage resistance characteristics, and can play an important role in the motor control system to improve the power density and efficiency of the system.
4. **Industrial power supply and switch control system**:
This MOSFET is very suitable for industrial power supply applications such as power converters, battery management systems (BMS), high-voltage power modules, etc. Its high current handling capability enables it to be used in industrial power systems to provide reliable power conversion and efficient switch control.
5. **Power regulation and energy management system**:
In energy management systems, battery charge and discharge regulation, power monitoring and regulation systems, the STW15N80K5-VB plays a key role. Its high voltage capability and efficient switching characteristics ensure that the system can operate in an efficient and stable state, and is suitable for scenarios such as grid regulation and distributed energy management.
6. **Automotive Electronic Applications**:
In the battery management, motor drive and charging control systems of electric vehicles and hybrid vehicles, STW15N80K5-VB as a high-voltage switching element can provide stable current control and efficient power conversion, improving the energy efficiency and reliability of the overall electric vehicle system.
7. **High-voltage Protection Circuit**:
This MOSFET is suitable for high-voltage protection circuits, such as overvoltage protection, load protection and other applications. Its 800V withstand voltage ensures the stability of the power system under high voltage shocks and avoids equipment damage during overvoltage.
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**STW15N80K5-VB** is widely used in high-voltage power systems, inverters, motor drives, industrial power supplies, energy management systems and other fields with its high withstand voltage of 800V, low on-resistance of 370mΩ and current carrying capacity of 15A. The STW15N80K5-VB, which uses SJ_Multi-EPI technology, provides excellent high-efficiency performance and reliable switching control. It is suitable for high-frequency, high-power, and high-voltage power conversion and management tasks. It is a MOSFET with important application value in many fields such as industry, energy, and automobiles.
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