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STW11NM80-VB Product details
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1. **STW11NM80-VB Product Introduction:**
STW11NM80-VB is a single N-channel MOSFET in a TO247 package designed for high voltage applications. It has a maximum drain-source voltage (VDS) of 800V, making it ideal for high voltage power supplies and power conversion applications. The maximum drain current (ID) of this MOSFET is 15A, and it has a threshold voltage (Vth) of 3.5V, enabling it to effectively conduct at a lower gate voltage. Its on-resistance (RDS(ON)) is 370mΩ@VGS=10V, and despite the high on-resistance, it still maintains good efficiency for medium power applications. STW11NM80-VB uses advanced SJ_Multi-EPI technology, which gives it excellent voltage resistance and efficient switching performance, making it suitable for industrial power modules that require high voltage resistance and low loss.
STW11NM80-VB is a single N-channel MOSFET in a TO247 package designed for high voltage applications. It has a maximum drain-source voltage (VDS) of 800V, making it ideal for high voltage power supplies and power conversion applications. The maximum drain current (ID) of this MOSFET is 15A, and it has a threshold voltage (Vth) of 3.5V, enabling it to effectively conduct at a lower gate voltage. Its on-resistance (RDS(ON)) is 370mΩ@VGS=10V, and despite the high on-resistance, it still maintains good efficiency for medium power applications. STW11NM80-VB uses advanced SJ_Multi-EPI technology, which gives it excellent voltage resistance and efficient switching performance, making it suitable for industrial power modules that require high voltage resistance and low loss.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 15A | 370mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
2. **STW11NM80-VB Detailed Parameters:**
- **Package Type:** TO247
- **Configuration:** Single-N-Channel
- **Maximum Drain-Source Voltage (VDS):** 800V
- **Maximum Gate-Source Voltage (VGS):** ±30V
- **Threshold Voltage (Vth):** 3.5V
- **On-Resistance (RDS(ON)):**
- 370mΩ @ VGS=10V
- **Maximum Drain Current (ID):** 15A
- **Technology:** SJ_Multi-EPI（Super Junction Multi-Epitaxial Technology）
- **Operating Temperature Range:** -55°C to +150°C
- **Power Loss:** Medium Power Applications, Suitable for Power Conversion Systems
- **Application Areas:** Power control, high voltage power supply, switching power supply, inverter, motor control, etc.
- **Package Type:** TO247
- **Configuration:** Single-N-Channel
- **Maximum Drain-Source Voltage (VDS):** 800V
- **Maximum Gate-Source Voltage (VGS):** ±30V
- **Threshold Voltage (Vth):** 3.5V
- **On-Resistance (RDS(ON)):**
- 370mΩ @ VGS=10V
- **Maximum Drain Current (ID):** 15A
- **Technology:** SJ_Multi-EPI（Super Junction Multi-Epitaxial Technology）
- **Operating Temperature Range:** -55°C to +150°C
- **Power Loss:** Medium Power Applications, Suitable for Power Conversion Systems
- **Application Areas:** Power control, high voltage power supply, switching power supply, inverter, motor control, etc.
Domain and module applications：
3. **Application fields and module examples:**
**1. High-voltage power supply system:**
The 800V drain-source voltage of STW11NM80-VB makes it an ideal choice for high-voltage power supply systems, especially for industrial power supplies, switching power supplies and inverters. Its excellent voltage resistance enables it to operate stably in high-voltage environments, especially in power electronic modules that require large voltage regulation and power distribution.
**2. Switching power supply and power conversion:**
This MOSFET is very suitable for applications in high-voltage switching power supplies (such as AC-DC and DC-DC converters) and power conversion systems. STW11NM80-VB can be used in high-power power modules to support high-voltage power conversion. Due to its super junction technology (SJ_Multi-EPI), it can provide low-loss switching performance in high-voltage applications, which is very suitable for occasions requiring efficient power conversion.
**3. Motor drive systems: **
STW11NM80-VB is also suitable for motor drive systems, especially in motor control that requires high voltage and high current. It can be used as a switching element for voltage regulation and current conduction control in motor control circuits. This MOSFET can stably handle the high voltage generated during motor drive, providing better performance and efficiency.
**4. Inverters and renewable energy: **
The high withstand voltage characteristics of STW11NM80-VB make it ideal for use in renewable energy applications such as photovoltaic (PV) inverters and wind power generation systems. In inverters, this MOSFET can be used to convert DC power to AC power, ensuring stable operation of the power system. Its high withstand voltage capability and low loss characteristics make it more reliable in high-voltage power conversion.
**5. Power distribution and control systems: **
STW11NM80-VB can also be applied to power distribution and control systems, especially medium-power high-voltage power control modules. This MOSFET can be used as a power switching element to help achieve efficient distribution and regulation of power, provide current limiting, short-circuit protection and other functions, and ensure the safety and stability of the system.
**1. High-voltage power supply system:**
The 800V drain-source voltage of STW11NM80-VB makes it an ideal choice for high-voltage power supply systems, especially for industrial power supplies, switching power supplies and inverters. Its excellent voltage resistance enables it to operate stably in high-voltage environments, especially in power electronic modules that require large voltage regulation and power distribution.
**2. Switching power supply and power conversion:**
This MOSFET is very suitable for applications in high-voltage switching power supplies (such as AC-DC and DC-DC converters) and power conversion systems. STW11NM80-VB can be used in high-power power modules to support high-voltage power conversion. Due to its super junction technology (SJ_Multi-EPI), it can provide low-loss switching performance in high-voltage applications, which is very suitable for occasions requiring efficient power conversion.
**3. Motor drive systems: **
STW11NM80-VB is also suitable for motor drive systems, especially in motor control that requires high voltage and high current. It can be used as a switching element for voltage regulation and current conduction control in motor control circuits. This MOSFET can stably handle the high voltage generated during motor drive, providing better performance and efficiency.
**4. Inverters and renewable energy: **
The high withstand voltage characteristics of STW11NM80-VB make it ideal for use in renewable energy applications such as photovoltaic (PV) inverters and wind power generation systems. In inverters, this MOSFET can be used to convert DC power to AC power, ensuring stable operation of the power system. Its high withstand voltage capability and low loss characteristics make it more reliable in high-voltage power conversion.
**5. Power distribution and control systems: **
STW11NM80-VB can also be applied to power distribution and control systems, especially medium-power high-voltage power control modules. This MOSFET can be used as a power switching element to help achieve efficient distribution and regulation of power, provide current limiting, short-circuit protection and other functions, and ensure the safety and stability of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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