中文
English
STU8NM50N-VB Product details
Back to previous pageProduct introduction：
Product Introduction: STU8NM50N-VB
**Model**: STU8NM50N-VB
**Package Type**: TO251
**Configuration**: Single-N-Channel
**Maximum Drain-Source Voltage (VDS)**: 650V
**Maximum Gate-Source Voltage (VGS)**: ±30V
**Threshold Voltage (Vth)**: 3.5V
**On-Resistance (RDS(ON))**: 700mΩ @ VGS = 10V
**Maximum Drain Current (ID)**: 7A
**Technology Type**: SJ_Multi-EPI Technology
STU8NM50N-VB is a high-voltage, low on-resistance single N-channel MOSFET in TO251 package, designed for high voltage applications up to 650V. This MOSFET has a low on-resistance (RDS(ON)) and is suitable for high-voltage power supplies, motor drives, switching power supplies and other fields, and can provide high efficiency and stable performance. It uses SJ_Multi-EPI technology to provide better power loss control and current carrying capacity, making it an ideal choice for high-voltage power systems and electric equipment.
---
**Model**: STU8NM50N-VB
**Package Type**: TO251
**Configuration**: Single-N-Channel
**Maximum Drain-Source Voltage (VDS)**: 650V
**Maximum Gate-Source Voltage (VGS)**: ±30V
**Threshold Voltage (Vth)**: 3.5V
**On-Resistance (RDS(ON))**: 700mΩ @ VGS = 10V
**Maximum Drain Current (ID)**: 7A
**Technology Type**: SJ_Multi-EPI Technology
STU8NM50N-VB is a high-voltage, low on-resistance single N-channel MOSFET in TO251 package, designed for high voltage applications up to 650V. This MOSFET has a low on-resistance (RDS(ON)) and is suitable for high-voltage power supplies, motor drives, switching power supplies and other fields, and can provide high efficiency and stable performance. It uses SJ_Multi-EPI technology to provide better power loss control and current carrying capacity, making it an ideal choice for high-voltage power systems and electric equipment.
---
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 7A | 700mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description:
1. **VDS (drain-source voltage)**: 650V
- The maximum drain-source voltage of STU8NM50N-VB is 650V, which is suitable for applications that require high voltage processing, such as high-voltage power supply systems, industrial equipment, switching power supplies and inverters.
2. **VGS (gate-source voltage)**: ±30V
- The maximum gate-source voltage is ±30V, which is suitable for a variety of control circuits and drive voltage standards, can support a wide range of operating voltages, and improves compatibility with drive circuits.
3. **Vth (threshold voltage)**: 3.5V
- The threshold voltage of this MOSFET is 3.5V, which has a higher switching threshold, helps to operate at a higher gate-source voltage, provides a stronger conduction capability, and is suitable for use in high voltage occasions.
4. **RDS(ON)**: 700mΩ @ VGS = 10V
- STU8NM50N-VB has a low on-resistance (700mΩ @ VGS = 10V), which helps reduce power loss during conduction and improves operating efficiency. Although it is higher than some low-voltage MOSFETs, it has achieved relatively ideal performance in high-voltage applications of 650V.
5. **ID (leakage current)**: 7A
- The maximum leakage current is 7A, which is suitable for power modules, inverters and other industrial applications with lower current and high voltage requirements, and can effectively support the needs of medium-power systems.
6. **Technology**: SJ_Multi-EPI technology
- This MOSFET adopts SJ_Multi-EPI (Super Junction Multi-EPI) technology, which has excellent current control capability and low power consumption characteristics, and is particularly suitable for high-voltage, high-frequency switching power supplies and load control applications.
---
1. **VDS (drain-source voltage)**: 650V
- The maximum drain-source voltage of STU8NM50N-VB is 650V, which is suitable for applications that require high voltage processing, such as high-voltage power supply systems, industrial equipment, switching power supplies and inverters.
2. **VGS (gate-source voltage)**: ±30V
- The maximum gate-source voltage is ±30V, which is suitable for a variety of control circuits and drive voltage standards, can support a wide range of operating voltages, and improves compatibility with drive circuits.
3. **Vth (threshold voltage)**: 3.5V
- The threshold voltage of this MOSFET is 3.5V, which has a higher switching threshold, helps to operate at a higher gate-source voltage, provides a stronger conduction capability, and is suitable for use in high voltage occasions.
4. **RDS(ON)**: 700mΩ @ VGS = 10V
- STU8NM50N-VB has a low on-resistance (700mΩ @ VGS = 10V), which helps reduce power loss during conduction and improves operating efficiency. Although it is higher than some low-voltage MOSFETs, it has achieved relatively ideal performance in high-voltage applications of 650V.
5. **ID (leakage current)**: 7A
- The maximum leakage current is 7A, which is suitable for power modules, inverters and other industrial applications with lower current and high voltage requirements, and can effectively support the needs of medium-power systems.
6. **Technology**: SJ_Multi-EPI technology
- This MOSFET adopts SJ_Multi-EPI (Super Junction Multi-EPI) technology, which has excellent current control capability and low power consumption characteristics, and is particularly suitable for high-voltage, high-frequency switching power supplies and load control applications.
---
Domain and module applications：
Application fields and module examples:
1. **Switching Power Supply (SMPS)**:
STU8NM50N-VB is very suitable for use in switching power supply systems (SMPS), especially in power conversion modules that require a high voltage of 650V. Its low on-resistance and high current carrying capacity can reduce energy loss and improve system efficiency during efficient power conversion, and is suitable for high-efficiency power systems such as LED drivers and power adapters.
2. **Inverter System**:
This MOSFET is suitable for inverter applications such as solar inverters, wind inverters, and UPS power supplies. Its 650V withstand voltage enables it to withstand high voltages and is suitable for switching actions during inverter voltage conversion while maintaining low power losses. Its excellent current carrying capacity and low power consumption characteristics are very suitable for use in power conversion and energy management systems.
3. **Motor Drive**:
STU8NM50N-VB is suitable for high-voltage motor drive systems, including power tools, electric vehicles, and other electric equipment. It can provide precise current control and efficient power transmission, reduce power loss in motor drive, and improve the energy efficiency of the overall system.
4. **Industrial Power Module**:
In industrial equipment, STU8NM50N-VB can be used as a key component in high-voltage power modules, especially in power transmission, automation control and industrial-grade power systems, to provide reliable high-voltage power conversion. Its voltage resistance and low on-resistance enable it to work effectively under high current loads, ensuring the stability and reliability of the power module.
5. **Automotive Electrical System**:
STU8NM50N-VB can be used in high-voltage power modules in automotive electrical systems, such as battery management systems (BMS) and electric drive systems. It can provide precise switching control and efficient power conversion, and plays an important role in the battery system of electric vehicles and hybrid vehicles, ensuring efficient energy utilization and system stability.
6. **High-voltage load switches and protection circuits**:
STU8NM50N-VB is suitable for high-voltage load switches and power protection circuits. In high-voltage applications, STU8NM50N-VB can efficiently switch current while maintaining low power loss, protecting the circuit from overload or voltage fluctuations. Its strong voltage resistance makes it an important application in power protection and switching systems.
---
STU8NM50N-VB is suitable for a variety of high-voltage applications with its high voltage resistance of 650V, low on-resistance of 700mΩ and high leakage current. The SJ_Multi-EPI technology it adopts enables it to perform well in high voltage, load control and high-efficiency power management, and is widely used in switching power supplies, motor drives, inverters, power modules, automotive electrical systems and high-voltage protection circuits.
1. **Switching Power Supply (SMPS)**:
STU8NM50N-VB is very suitable for use in switching power supply systems (SMPS), especially in power conversion modules that require a high voltage of 650V. Its low on-resistance and high current carrying capacity can reduce energy loss and improve system efficiency during efficient power conversion, and is suitable for high-efficiency power systems such as LED drivers and power adapters.
2. **Inverter System**:
This MOSFET is suitable for inverter applications such as solar inverters, wind inverters, and UPS power supplies. Its 650V withstand voltage enables it to withstand high voltages and is suitable for switching actions during inverter voltage conversion while maintaining low power losses. Its excellent current carrying capacity and low power consumption characteristics are very suitable for use in power conversion and energy management systems.
3. **Motor Drive**:
STU8NM50N-VB is suitable for high-voltage motor drive systems, including power tools, electric vehicles, and other electric equipment. It can provide precise current control and efficient power transmission, reduce power loss in motor drive, and improve the energy efficiency of the overall system.
4. **Industrial Power Module**:
In industrial equipment, STU8NM50N-VB can be used as a key component in high-voltage power modules, especially in power transmission, automation control and industrial-grade power systems, to provide reliable high-voltage power conversion. Its voltage resistance and low on-resistance enable it to work effectively under high current loads, ensuring the stability and reliability of the power module.
5. **Automotive Electrical System**:
STU8NM50N-VB can be used in high-voltage power modules in automotive electrical systems, such as battery management systems (BMS) and electric drive systems. It can provide precise switching control and efficient power conversion, and plays an important role in the battery system of electric vehicles and hybrid vehicles, ensuring efficient energy utilization and system stability.
6. **High-voltage load switches and protection circuits**:
STU8NM50N-VB is suitable for high-voltage load switches and power protection circuits. In high-voltage applications, STU8NM50N-VB can efficiently switch current while maintaining low power loss, protecting the circuit from overload or voltage fluctuations. Its strong voltage resistance makes it an important application in power protection and switching systems.
---
STU8NM50N-VB is suitable for a variety of high-voltage applications with its high voltage resistance of 650V, low on-resistance of 700mΩ and high leakage current. The SJ_Multi-EPI technology it adopts enables it to perform well in high voltage, load control and high-efficiency power management, and is widely used in switching power supplies, motor drives, inverters, power modules, automotive electrical systems and high-voltage protection circuits.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
