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STU666S-VB Product details
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STU666S-VB MOSFET Product Introduction
The STU666S-VB is a high-efficiency unipolar N-channel MOSFET in a TO252 package with a drain-source voltage (VDS) rating of 60V for medium voltage switching applications. Based on Trench technology, the device has a low on-resistance (RDS(ON)) of 85mΩ at VGS = 4.5V and further reduced to 73mΩ at VGS = 10V, which enables it to have lower power losses in medium power supply applications. The maximum drain current of the STU666S-VB is 18A, which is suitable for most occasions requiring high switching speed and high efficiency. With its low on-resistance and wide gate voltage range (±20V), it is ideal for efficient power management and high current applications.
The STU666S-VB is a high-efficiency unipolar N-channel MOSFET in a TO252 package with a drain-source voltage (VDS) rating of 60V for medium voltage switching applications. Based on Trench technology, the device has a low on-resistance (RDS(ON)) of 85mΩ at VGS = 4.5V and further reduced to 73mΩ at VGS = 10V, which enables it to have lower power losses in medium power supply applications. The maximum drain current of the STU666S-VB is 18A, which is suitable for most occasions requiring high switching speed and high efficiency. With its low on-resistance and wide gate voltage range (±20V), it is ideal for efficient power management and high current applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | 73mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
STU666S-VB MOSFET detailed parameter description
- **Package**: TO252
- **Configuration**: Unipolar N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 85mΩ @ VGS = 4.5V
- 73mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 18A
- **Technology**: Trench technology
- **Package**: TO252
- **Configuration**: Unipolar N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 85mΩ @ VGS = 4.5V
- 73mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 18A
- **Technology**: Trench technology
Domain and module applications：
STU666S-VB Application Fields and Module Examples
1. **DC-DC Converter**: STU666S-VB performs well in medium-power DC-DC converters, especially in power supply applications that require high efficiency and low power loss. Due to its low on-resistance, it can significantly reduce switching losses and improve the conversion efficiency of the system.
2. **Battery Management System (BMS)**: Due to its 60V drain-source voltage rating, STU666S-VB is suitable for current control and power switching in battery management systems. These systems usually require efficient switching devices to ensure that power losses during battery charging and discharging are minimized, thereby improving overall system efficiency.
3. **Power Tools and Motor Drive Systems**: STU666S-VB is also suitable for power tools or motor drive systems, which require high current carrying capacity and fast switching performance. Its maximum drain current capability of 18A and low RDS(ON) characteristics are very suitable for these high-performance occasions.
4. **LED drive circuit**: This MOSFET can also be used in LED drive circuits, especially in lighting systems that require high current and high efficiency. Its low on-resistance and high switching efficiency make it an ideal choice for LED lighting applications, ensuring low energy loss and stable light output.
5. **Power management and power amplifier**: The high efficiency and low power loss of STU666S-VB make it an ideal choice for power management and power amplifier designs. In these applications, it can provide stable switching control under high current loads while maintaining low heat loss.
6. **Automotive electronic system**: This MOSFET is suitable for power management modules in automotive electronic systems. With the development of automotive electrification, more and more electric control units and battery management systems require efficient power switches to improve battery efficiency and overall system performance.
With its low on-resistance, wide gate-source voltage range and high current carrying capability, STU666S-VB is widely used in medium voltage power conversion, battery management, electric drive, lighting and automotive electronics where high efficiency and stability are required.
1. **DC-DC Converter**: STU666S-VB performs well in medium-power DC-DC converters, especially in power supply applications that require high efficiency and low power loss. Due to its low on-resistance, it can significantly reduce switching losses and improve the conversion efficiency of the system.
2. **Battery Management System (BMS)**: Due to its 60V drain-source voltage rating, STU666S-VB is suitable for current control and power switching in battery management systems. These systems usually require efficient switching devices to ensure that power losses during battery charging and discharging are minimized, thereby improving overall system efficiency.
3. **Power Tools and Motor Drive Systems**: STU666S-VB is also suitable for power tools or motor drive systems, which require high current carrying capacity and fast switching performance. Its maximum drain current capability of 18A and low RDS(ON) characteristics are very suitable for these high-performance occasions.
4. **LED drive circuit**: This MOSFET can also be used in LED drive circuits, especially in lighting systems that require high current and high efficiency. Its low on-resistance and high switching efficiency make it an ideal choice for LED lighting applications, ensuring low energy loss and stable light output.
5. **Power management and power amplifier**: The high efficiency and low power loss of STU666S-VB make it an ideal choice for power management and power amplifier designs. In these applications, it can provide stable switching control under high current loads while maintaining low heat loss.
6. **Automotive electronic system**: This MOSFET is suitable for power management modules in automotive electronic systems. With the development of automotive electrification, more and more electric control units and battery management systems require efficient power switches to improve battery efficiency and overall system performance.
With its low on-resistance, wide gate-source voltage range and high current carrying capability, STU666S-VB is widely used in medium voltage power conversion, battery management, electric drive, lighting and automotive electronics where high efficiency and stability are required.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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