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STU612D-VB Product details

Product introduction:

Product Introduction

**STU612D-VB** is a **conventional drain-N+P channel** dual MOSFET in **TO252-4L package**, with **±40V maximum drain-source voltage (VDS)** and **±50A maximum drain current (ID)**. It adopts **Trench technology**, with low on-resistance and high current carrying capability, designed for high-efficiency power switching and high-frequency applications. The **N-channel** and **P-channel** MOSFET configurations of this model provide bidirectional current control, suitable for circuit designs that require positive and negative current handling.

STU612D-VB has **low RDS(ON)** values, **14mΩ** at **VGS = 4.5V** (same for both N and P channels), and **16mΩ** at **VGS = 10V**. This enables the product to achieve low energy loss when current flows, improving overall system efficiency.

This MOSFET is suitable for systems that require bidirectional power conversion, high current control and efficient power transmission, and is widely used in battery management, power management and electric drive systems.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252-4L Common Drain-N+P ±40V 1.8/-1.7V ±50A 16/16mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252-4L Common Drain-N+P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252-4L Common Drain-N+P ±40V 1.8/-1.7V ±50A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252-4L Common Drain-N+P ±40V 1.8/-1.7V ±50A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252-4L Common Drain-N+P
Detailed parameter description

| **Parameter** | **Description** |
|-----------------|-----------------------------------------------|
| **Model** | STU612D-VB |
| **Package** | TO252-4L |
| **Configuration** | Common Drain (N+P-Channel) |
| **VDS** | ±40V |
| **VGS** | ±20V |
| **Vth (N-Channel)** | 1.8V |
| **Vth (P-Channel)** | -1.7V |
| **RDS(ON)** | 14mΩ @ VGS = 4.5V (N & P Channels) |
| | 16mΩ @ VGS = 10V (N & P Channels) |
| **ID** | ±50A |
| **Technology** | Trench Technology|
| **Maximum power consumption** | 250W (calculated based on datasheet and application environment) |
| **Operating temperature range** | -55°C to +150°C |
| **Package type** | TO252-4L |

Domain and module applications:

Applicable fields and modules

**STU612D-VB** is suitable for multiple high-performance applications, especially in systems that require bidirectional current control and high current carrying capacity. The following are some typical application areas:

1. **Battery Management System (BMS)**:
In **Battery Management System**, STU612D-VB can be used for switch control during battery charging and discharging due to its high current carrying capacity and low on-resistance. This is essential for electric vehicles, power tools and other high-power battery-powered devices. The bidirectional current characteristics of this MOSFET enable it to effectively manage battery charging and discharging, provide stable battery performance and extend battery life.

2. **DC-DC Power Converter**:
In **DC-DC Converter**, STU612D-VB can be used as an efficient switching element to support higher current and low power conversion. It can reduce switching losses and optimize power efficiency. It is widely used in **communication equipment**, **server power**, **industrial power** and **portable devices**.

3. **Electric Vehicle Power Management**:
Due to its high current capability and excellent switching performance, STU612D-VB plays an important role in **power management systems** and **battery management** in **electric vehicles (EV)**. It can be used in electric drive systems and charging control systems to ensure stable current output and efficient energy transfer.

4. **Inverters and Power Distribution Units**:
As a key switching element in **inverters** and **power distribution units (PDUs)**, STU612D-VB supports bidirectional current control, which can effectively control the flow of power and improve the overall system efficiency. It is especially suitable for **solar inverters**, **uninterruptible power supplies (UPS)** and **high-power power supply systems**.

5. **High-power switching power supplies and high-frequency applications**:
The low on-resistance and high current capability of STU612D-VB make it very suitable for **high-power switching power supplies (SMPS)** and other **high-frequency applications**. For example, in **high-efficiency power amplifiers** and **wireless communication devices**, using this MOSFET can provide lower energy loss and improve system efficiency.

In general, STU612D-VB is suitable for a variety of occasions requiring efficient power management and current control, which can improve system performance and optimize energy transfer. It is widely used in **power management**, **battery management**, **electric drive systems** and **high-power electronic devices**.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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