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STU6025NL2-VB Product details
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1. Product Introduction
**STU6025NL2-VB** is a high-performance N-Channel MOSFET in TO252 package, designed for high current, high power applications. Its drain-source voltage (V_DS) is 30V, the gate-source voltage (V_GS) can withstand ±20V, and the maximum leakage current (I_D) reaches 100A. This MOSFET uses advanced Trench technology and has extremely low on-resistance (R_DS(ON) = 3mΩ @ V_GS = 4.5V, 2mΩ @ V_GS = 10V), which makes it perform well in high-efficiency applications, significantly reducing energy loss and improving overall efficiency. The device is suitable for switching power supplies with high current loads, automotive power management, electric drive systems, and industrial power applications.
**STU6025NL2-VB** is a high-performance N-Channel MOSFET in TO252 package, designed for high current, high power applications. Its drain-source voltage (V_DS) is 30V, the gate-source voltage (V_GS) can withstand ±20V, and the maximum leakage current (I_D) reaches 100A. This MOSFET uses advanced Trench technology and has extremely low on-resistance (R_DS(ON) = 3mΩ @ V_GS = 4.5V, 2mΩ @ V_GS = 10V), which makes it perform well in high-efficiency applications, significantly reducing energy loss and improving overall efficiency. The device is suitable for switching power supplies with high current loads, automotive power management, electric drive systems, and industrial power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. Detailed parameter description
- **Model**: STU6025NL2-VB
- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source voltage (V_DS)**: 30V
- **Gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 1.7V
- **On-resistance (R_DS(ON))**:
- 3mΩ @ V_GS = 4.5V
- 2mΩ @ V_GS = 10V
- **Maximum leakage current (I_D)**: 100A
- **Input capacitance (C_GS)**: 2250pF
- **Output capacitance (C_GD)**: 300pF
- **Maximum power dissipation (P_D)**: 200W
- **Junction Temperature Range**: -55°C to +150°C
- **Reverse Recovery Time (t_rr)**: < 20ns
- **Technology Type**: Trench
- **Package Type**: TO252
- **Model**: STU6025NL2-VB
- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source voltage (V_DS)**: 30V
- **Gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 1.7V
- **On-resistance (R_DS(ON))**:
- 3mΩ @ V_GS = 4.5V
- 2mΩ @ V_GS = 10V
- **Maximum leakage current (I_D)**: 100A
- **Input capacitance (C_GS)**: 2250pF
- **Output capacitance (C_GD)**: 300pF
- **Maximum power dissipation (P_D)**: 200W
- **Junction Temperature Range**: -55°C to +150°C
- **Reverse Recovery Time (t_rr)**: < 20ns
- **Technology Type**: Trench
- **Package Type**: TO252
Domain and module applications：
3. Application fields and module examples
1. **High-efficiency power conversion system**:
**STU6025NL2-VB**'s low on-resistance (3mΩ @ V_GS = 4.5V) and high leakage current carrying capacity (100A) make it ideal in high-efficiency power conversion systems. In DC-DC converters and AC-DC power modules, it can provide low-loss current conversion and reduce power loss in the system, significantly improving energy efficiency. Whether in computer power supplies, server power supplies or power supply systems, STU6025NL2-VB can provide stable performance.
2. **Electric vehicle drive system (EV)**:
In electric vehicles (EV), **STU6025NL2-VB** can be used in battery management systems, electric drive systems and power control modules. Its high current handling capability (100A) enables it to stably regulate battery current and drive motors, ensuring efficient operation of the car under various driving conditions. The low on-resistance of MOSFET also effectively reduces power loss, improves the energy efficiency of the overall system, and extends battery life.
3. **Solar Inverter**:
In solar power generation systems, **STU6025NL2-VB** is used as a high-current switching device in the inverter circuit to convert the DC power generated by the solar panel into AC power. Its extremely low on-resistance and high leakage current capability make the solar inverter efficient at high power output, reducing system losses and improving the overall energy conversion efficiency. This MOSFET is suitable for solar power generation systems of all sizes and can efficiently transmit energy.
4. **Battery Charging Management System**:
**STU6025NL2-VB**'s high current carrying capacity makes it an ideal choice for battery charging management systems. During the battery charging process, MOSFET can be used to accurately control the charging current to ensure that the battery charging process is stable and efficient. Especially in fast charging and high-power charging systems, low on-resistance and high current carrying capacity help improve charging efficiency and prevent overheating or energy waste.
5. **Smart Grid Systems**:
**STU6025NL2-VB** can be used in power switch control modules in smart grids, especially in high-efficiency load management systems. Due to its low on-resistance and high current capability, STU6025NL2-VB can help smart grids better regulate and distribute power, ensuring system stability and energy efficiency, especially when dealing with high-power loads and unstable current conditions.
6. **Automotive Electronic Systems**:
In the field of automotive electronics, **STU6025NL2-VB** can be widely used in automotive power management and electric drive systems. Its low on-resistance and high current carrying capacity make it suitable for automotive electronic modules such as electric steering systems, electric braking systems, and battery management systems. The MOSFET provides efficient and stable current control, improving the system's energy efficiency and response speed while reducing power losses.
7. **High-frequency communication power supply**:
**STU6025NL2-VB** can also be used in high-frequency communication power modules. In RF power amplifiers, data transmission systems and other equipment, MOSFET provides efficient power switch control. Its low on-resistance enables it to withstand the requirements of high-speed switching and high-current loads while maintaining high efficiency, thereby ensuring the stability and continuous operation of the communication system.
1. **High-efficiency power conversion system**:
**STU6025NL2-VB**'s low on-resistance (3mΩ @ V_GS = 4.5V) and high leakage current carrying capacity (100A) make it ideal in high-efficiency power conversion systems. In DC-DC converters and AC-DC power modules, it can provide low-loss current conversion and reduce power loss in the system, significantly improving energy efficiency. Whether in computer power supplies, server power supplies or power supply systems, STU6025NL2-VB can provide stable performance.
2. **Electric vehicle drive system (EV)**:
In electric vehicles (EV), **STU6025NL2-VB** can be used in battery management systems, electric drive systems and power control modules. Its high current handling capability (100A) enables it to stably regulate battery current and drive motors, ensuring efficient operation of the car under various driving conditions. The low on-resistance of MOSFET also effectively reduces power loss, improves the energy efficiency of the overall system, and extends battery life.
3. **Solar Inverter**:
In solar power generation systems, **STU6025NL2-VB** is used as a high-current switching device in the inverter circuit to convert the DC power generated by the solar panel into AC power. Its extremely low on-resistance and high leakage current capability make the solar inverter efficient at high power output, reducing system losses and improving the overall energy conversion efficiency. This MOSFET is suitable for solar power generation systems of all sizes and can efficiently transmit energy.
4. **Battery Charging Management System**:
**STU6025NL2-VB**'s high current carrying capacity makes it an ideal choice for battery charging management systems. During the battery charging process, MOSFET can be used to accurately control the charging current to ensure that the battery charging process is stable and efficient. Especially in fast charging and high-power charging systems, low on-resistance and high current carrying capacity help improve charging efficiency and prevent overheating or energy waste.
5. **Smart Grid Systems**:
**STU6025NL2-VB** can be used in power switch control modules in smart grids, especially in high-efficiency load management systems. Due to its low on-resistance and high current capability, STU6025NL2-VB can help smart grids better regulate and distribute power, ensuring system stability and energy efficiency, especially when dealing with high-power loads and unstable current conditions.
6. **Automotive Electronic Systems**:
In the field of automotive electronics, **STU6025NL2-VB** can be widely used in automotive power management and electric drive systems. Its low on-resistance and high current carrying capacity make it suitable for automotive electronic modules such as electric steering systems, electric braking systems, and battery management systems. The MOSFET provides efficient and stable current control, improving the system's energy efficiency and response speed while reducing power losses.
7. **High-frequency communication power supply**:
**STU6025NL2-VB** can also be used in high-frequency communication power modules. In RF power amplifiers, data transmission systems and other equipment, MOSFET provides efficient power switch control. Its low on-resistance enables it to withstand the requirements of high-speed switching and high-current loads while maintaining high efficiency, thereby ensuring the stability and continuous operation of the communication system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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