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STU5N95K3-VB Product details

Product introduction:

STU5N95K3-VB MOSFET Product Introduction

The STU5N95K3-VB is a high voltage N-channel MOSFET in a TO251 package with a drain-source voltage (VDS) rating of 900V, suitable for high voltage switching applications. Based on SJ_Multi-EPI technology, the device has a threshold voltage (Vth) of 3.5V and a gate-source voltage (VGS) range of 30V, capable of operating at a wide gate voltage. The STU5N95K3-VB has an on-resistance (RDS(ON)) of 2700mΩ (@ VGS = 10V), suitable for low current high voltage switching applications, with a maximum drain current (ID) of 2A. The high voltage withstand characteristics of this MOSFET make it valuable in applications requiring high voltage protection and reliability.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO251 Single-N 900V 3.5V 2A 2700mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO251 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO251 Single-N 900V 3.5V 2A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO251 Single-N 900V 3.5V 2A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO251 Single-N
STU5N95K3-VB MOSFET detailed parameter description

- **Package**: TO251
- **Configuration**: Unipolar N-channel
- **Drain-source voltage (VDS)**: 900V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 2700mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 2A
- **Technology**: SJ_Multi-EPI technology

Domain and module applications:

STU5N95K3-VB Applications and Module Examples

1. **High-voltage power converter**: Due to its 900V drain-source voltage rating, the STU5N95K3-VB is ideal for high-voltage power converters such as AC-DC converters, DC-DC converters, etc. It is able to provide stable switching control in high-voltage applications, especially where high withstand voltage is required and current load is low.

2. **Power electronic equipment**: This MOSFET can be used in high-voltage switching modules in power electronic equipment, especially where high voltage isolation and high reliability are required. Typical applications include industrial power control, variable frequency drives, and other high-power electronic systems.

3. **Photovoltaic inverter**: In solar photovoltaic systems, the STU5N95K3-VB is suitable for switching control of solar inverters. Its 900V drain-source voltage rating enables it to withstand the high voltages commonly found in solar systems while providing efficient energy conversion and protection.

4. **Automotive Power Management System**: STU5N95K3-VB can be applied to automotive power management systems, especially in high-voltage power converters for electric vehicles (EV) and hybrid vehicles (HEV). Its high voltage and low current characteristics make it well suited to provide robust power regulation and conversion in these applications.

5. **Lighting and other high-power load control**: STU5N95K3-VB can be used as a key switching component in the control systems of high-voltage lamp drivers, electrical heaters and other high-power loads. In these applications, it can maintain stable operating performance and reduce losses at higher operating voltages.

6. **Grid Infrastructure**: STU5N95K3-VB can be used in grid equipment such as high-voltage switches, current protection devices and power transmission equipment. Due to its high voltage resistance and reliability, it is very suitable for use in these occasions to ensure the stability and security of the power grid.

In summary, as a high-voltage MOSFET, STU5N95K3-VB is widely used in high-voltage power management, energy conversion, industrial control, automotive power systems and other fields due to its excellent voltage resistance and stable switching characteristics.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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