STU5025NLS-VB Product details
Product introduction:
**Model**: STU5025NLS-VB
**Package Type**: TO252
**Configuration**: Single-N-Channel
**Maximum Drain-Source Voltage (VDS)**: 20V
**Maximum Gate-Source Voltage (VGS)**: ±20V
**Threshold Voltage (Vth)**: 0.5V ~ 1.5V
**On-Resistance (RDS(ON))**: 6mΩ @ VGS = 2.5V; 4.5mΩ @ VGS = 4.5V
**Maximum Drain Current (ID)**: 100A
**Technology Type**: Trench Technology
STU5025NLS-VB is a low voltage, high current single N-channel MOSFET in TO252 package, which is particularly suitable for low voltage, high efficiency current control applications. This MOSFET has very low on-resistance (RDS(ON)) and high leakage current carrying capacity, supports a maximum leakage current of 100A, and is suitable for various systems requiring high current density and low power loss. Its low threshold voltage enables efficient switching operation at a lower gate-source voltage, and is widely used in power management, fast switching circuits, power conversion and other fields.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
1. **VDS (drain-source voltage)**: 20V
- The maximum drain-source voltage of STU5025NLS-VB is 20V, which is suitable for low-voltage systems. It can work stably at a voltage of 20V and is suitable for low-voltage control circuits and modules.
2. **VGS (gate-source voltage)**: ±20V
- Supports a maximum gate-source voltage of ±20V and is compatible with a variety of standard drive circuits. This design makes MOSFET adaptable to a variety of power systems and drive requirements, especially in switching power supplies and current control systems.
3. **Vth (threshold voltage)**: 0.5V ~ 1.5V
- The threshold voltage is between 0.5V and 1.5V, which means that the MOSFET can be turned on at a lower gate-source voltage, suitable for high-efficiency, high-speed switching circuits, and still maintains good switching performance at low voltages.
4. **RDS(ON)**: 6mΩ (VGS = 2.5V); 4.5mΩ (VGS = 4.5V)
- This MOSFET has an extremely low on-resistance (RDS(ON)), 6mΩ at VGS=2.5V, 4.5mΩ at VGS=4.5V, which can significantly reduce the power loss in the on state, making it very suitable for applications that require high efficiency under high current operation.
5. **ID (leakage current)**: 100A
- The maximum leakage current is 100A, which enables this MOSFET to carry high current loads and is suitable for power conversion and load control circuits with high current requirements.
6. **Technology**: Trench Technology
- Made with Trench technology, STU5025NLS-VB has efficient current conduction capability, low on-resistance and fast response characteristics, making it ideal for high-frequency switching and high-current applications.
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Domain and module applications:
1. **Power management system**:
STU5025NLS-VB is suitable for high-efficiency power management systems, especially low-voltage DC-DC converters, charging systems and battery management systems (BMS). Its low RDS(ON) and high current carrying capacity can improve power efficiency and reduce heat generation, and is particularly suitable for mobile devices, communication equipment and portable power systems.
2. **Power tools and power equipment**:
Due to its ability to withstand high currents and low power consumption, STU5025NLS-VB can provide stable current control and high-efficiency operation in power tools, electric bicycles, electric vehicles and other electric equipment, especially in drive motor control and battery management.
3. **High-efficiency switching power supply**:
STU5025NLS-VB is very suitable for high-efficiency switching power supply (SMPS) design, such as server power supply, communication power adapter, wireless charging equipment and LED driver power supply. Its fast switching performance and low RDS(ON) characteristics enable it to maintain low power loss under high-speed switching operation, ensuring system efficiency and stability.
4. **Motor drive system**:
In the motor drive system, the high current carrying capacity and low on-resistance of STU5025NLS-VB make it an ideal choice, especially for driving DC motors, stepper motors and other small motors. Its fast switching characteristics can improve the accuracy and response speed of motor control.
5. **Inverter system**:
STU5025NLS-VB is widely used in solar inverters, wind inverters and other power inverter systems, and can provide efficient power conversion. The low RDS(ON) performance enables it to reduce power loss under high-frequency operation, improve energy efficiency and extend the service life of the system.
6. **Load Switch and Power Protection**:
In the load switch circuit, STU5025NLS-VB can switch the load efficiently and provide protection when the power supply is overloaded or short-circuited. It can respond quickly under high current loads and provide reliable switch control and overcurrent protection.
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STU5025NLS-VB MOSFET is widely used in low voltage, high current, high efficiency power management, switching power supplies, power tools, battery management, inverters and other fields due to its low on-resistance, fast switching and high current carrying capacity. Its superior performance makes it an ideal choice for various systems that require high efficiency, low power loss and fast response.
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