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STU45N01-VB Product details
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Product Introduction
**STU45N01-VB** is a **single N-type MOSFET** in **TO252 package**, using **Trench technology**, and its design goal is to provide excellent performance and reliability, suitable for high power and high current applications. This model has a **maximum drain-source voltage (VDS)** of **100V and a **maximum drain current (ID)** of **45A, providing high power handling capabilities, suitable for systems that require high switching frequency and low conduction loss.
Its **RDS(ON)** is 18mΩ** at **10V gate drive voltage, and the extremely low on-resistance makes this MOSFET have lower energy loss when current passes through, thereby improving the overall system efficiency. The **Vth (threshold voltage)** of this model is **1.8V**, which enables it to work effectively in low voltage environments and support a variety of power management and battery-powered systems.
**STU45N01-VB** is a **single N-type MOSFET** in **TO252 package**, using **Trench technology**, and its design goal is to provide excellent performance and reliability, suitable for high power and high current applications. This model has a **maximum drain-source voltage (VDS)** of **100V and a **maximum drain current (ID)** of **45A, providing high power handling capabilities, suitable for systems that require high switching frequency and low conduction loss.
Its **RDS(ON)** is 18mΩ** at **10V gate drive voltage, and the extremely low on-resistance makes this MOSFET have lower energy loss when current passes through, thereby improving the overall system efficiency. The **Vth (threshold voltage)** of this model is **1.8V**, which enables it to work effectively in low voltage environments and support a variety of power management and battery-powered systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 45A | 18mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 45A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 45A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
| **Parameter** | **Description** |
|-----------------|-----------------------------------------------|
| **Model** | STU45N01-VB |
| **Package** | TO252 |
| **Configuration** | Single N-type MOSFET |
| **VDS** | 100V |
| **VGS** | ±20V |
| **Vth** | 1.8V |
| **RDS(ON)** | 18mΩ @ VGS = 10V |
| **ID** | 45A |
| **Technology** | Trench technology|
| **Maximum power dissipation** | 270W (depending on the data sheet and application environment) |
| **Operating temperature range** | -55°C to +150°C |
| **Package type** | TO252 |
| **Parameter** | **Description** |
|-----------------|-----------------------------------------------|
| **Model** | STU45N01-VB |
| **Package** | TO252 |
| **Configuration** | Single N-type MOSFET |
| **VDS** | 100V |
| **VGS** | ±20V |
| **Vth** | 1.8V |
| **RDS(ON)** | 18mΩ @ VGS = 10V |
| **ID** | 45A |
| **Technology** | Trench technology|
| **Maximum power dissipation** | 270W (depending on the data sheet and application environment) |
| **Operating temperature range** | -55°C to +150°C |
| **Package type** | TO252 |
Domain and module applications：
Applicable fields and modules
**STU45N01-VB** can provide ideal performance in many high-performance, low-power applications. The following are several major fields and modules for its application:
1. **DC-DC converter**:
Due to its low **RDS(ON)** and high **ID**, this MOSFET is particularly suitable as a switching element in **DC-DC power converter**. It can effectively reduce switching losses and improve conversion efficiency. It is widely used in **power supply systems**, **communication equipment** and **industrial control systems**.
2. **Battery Management System (BMS)**:
In the **battery management system** of electric vehicles (EV) or other high-power devices, **STU45N01-VB** helps improve battery charging and discharging efficiency and reduce energy loss through its high **VDS** and low **RDS(ON)** characteristics. It supports fast switching operations to protect batteries from overvoltage and overcurrent.
3. **Power Management and Distribution System**:
In complex **power management systems**, this MOSFET is used for **load switch control** and **power distribution unit (PDU)** to achieve low-loss current conduction and improve overall efficiency. It performs well in applications requiring high current carrying and low power consumption, and is suitable for power modules in **computer hardware** and **communication equipment**.
4. **Electric Vehicle Charging System**:
Due to its support for high **ID** and **low RDS(ON)**, this MOSFET is suitable for use in **electric vehicle charging stations** and **electric vehicle chargers** to control current flow and improve charging efficiency.
5. **Industrial Power System**:
**STU45N01-VB** can also be used in **industrial power management systems**, such as **UPS (Uninterruptible Power Supply)** and **power supply modules**, to work stably under high load and high current conditions, ensuring long-term reliability and stability of the system.
Overall, **STU45N01-VB** is a MOSFET suitable for multiple high-efficiency, high-power electronic systems. It can provide stable switching characteristics and low-loss performance, and is an indispensable component in many modern power management systems.
**STU45N01-VB** can provide ideal performance in many high-performance, low-power applications. The following are several major fields and modules for its application:
1. **DC-DC converter**:
Due to its low **RDS(ON)** and high **ID**, this MOSFET is particularly suitable as a switching element in **DC-DC power converter**. It can effectively reduce switching losses and improve conversion efficiency. It is widely used in **power supply systems**, **communication equipment** and **industrial control systems**.
2. **Battery Management System (BMS)**:
In the **battery management system** of electric vehicles (EV) or other high-power devices, **STU45N01-VB** helps improve battery charging and discharging efficiency and reduce energy loss through its high **VDS** and low **RDS(ON)** characteristics. It supports fast switching operations to protect batteries from overvoltage and overcurrent.
3. **Power Management and Distribution System**:
In complex **power management systems**, this MOSFET is used for **load switch control** and **power distribution unit (PDU)** to achieve low-loss current conduction and improve overall efficiency. It performs well in applications requiring high current carrying and low power consumption, and is suitable for power modules in **computer hardware** and **communication equipment**.
4. **Electric Vehicle Charging System**:
Due to its support for high **ID** and **low RDS(ON)**, this MOSFET is suitable for use in **electric vehicle charging stations** and **electric vehicle chargers** to control current flow and improve charging efficiency.
5. **Industrial Power System**:
**STU45N01-VB** can also be used in **industrial power management systems**, such as **UPS (Uninterruptible Power Supply)** and **power supply modules**, to work stably under high load and high current conditions, ensuring long-term reliability and stability of the system.
Overall, **STU45N01-VB** is a MOSFET suitable for multiple high-efficiency, high-power electronic systems. It can provide stable switching characteristics and low-loss performance, and is an indispensable component in many modern power management systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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