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STU446S-VB Product details
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Product Introduction: STU446S-VB
**Model**: STU446S-VB
**Package Type**: TO252
**Configuration**: Single-N-Channel
**Maximum Drain-Source Voltage (VDS)**: 40V
**Maximum Gate-Source Voltage (VGS)**: ±20V
**Threshold Voltage (Vth)**: 2.5V
**On-Resistance (RDS(ON))**: 14mΩ / 12mΩ @ VGS = 4.5V / 10V
**Maximum Drain Current (ID)**: 55A
**Technology Type**: Trench Technology
STU446S-VB is a high-efficiency single N-channel MOSFET in TO252 package with a maximum drain-source voltage of 40V. It can withstand a leakage current of up to 55A and is suitable for high current applications. With its low on-resistance (RDS(ON)), this MOSFET can significantly reduce power loss and improve system efficiency, and is particularly suitable for power conversion, switching power supplies, and motor drives. STU446S-VB also has high voltage resistance and is suitable for efficient power management systems that require high current and high reliability.
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**Model**: STU446S-VB
**Package Type**: TO252
**Configuration**: Single-N-Channel
**Maximum Drain-Source Voltage (VDS)**: 40V
**Maximum Gate-Source Voltage (VGS)**: ±20V
**Threshold Voltage (Vth)**: 2.5V
**On-Resistance (RDS(ON))**: 14mΩ / 12mΩ @ VGS = 4.5V / 10V
**Maximum Drain Current (ID)**: 55A
**Technology Type**: Trench Technology
STU446S-VB is a high-efficiency single N-channel MOSFET in TO252 package with a maximum drain-source voltage of 40V. It can withstand a leakage current of up to 55A and is suitable for high current applications. With its low on-resistance (RDS(ON)), this MOSFET can significantly reduce power loss and improve system efficiency, and is particularly suitable for power conversion, switching power supplies, and motor drives. STU446S-VB also has high voltage resistance and is suitable for efficient power management systems that require high current and high reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 55A | 12mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 55A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 55A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description:
1. **VDS (drain-source voltage)**: 40V
- The maximum drain-source voltage of STU446S-VB is 40V, which is suitable for medium voltage applications such as low-voltage DC-DC converters and high-efficiency power management systems.
2. **VGS (gate-source voltage)**: ±20V
- This MOSFET supports a maximum gate-source voltage of ±20V, which means it is suitable for a variety of drive circuits, especially in applications with higher gate drive voltages.
3. **Vth (threshold voltage)**: 2.5V
- The threshold voltage is 2.5V, which means that the MOSFET will start to conduct at a relatively low gate-source voltage, enabling fast response and stable switching performance.
4. **RDS(ON) (On-resistance)**: 14mΩ (VGS = 4.5V), 12mΩ (VGS = 10V)
- STU446S-VB has very low on-resistance, which can effectively reduce power loss when working at high current. Its excellent RDS(ON) performance makes it excel in applications requiring high efficiency.
5. **ID (Drainage Current)**: 55A
- The maximum leakage current is 55A, which is suitable for high-current applications and can handle high load current without affecting performance, ensuring system stability.
6. **Technology**: Trench technology
- The STU446S-VB manufactured with Trench technology has efficient current conduction capability and fast switching response speed, which is particularly suitable for high-frequency switching circuits.
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1. **VDS (drain-source voltage)**: 40V
- The maximum drain-source voltage of STU446S-VB is 40V, which is suitable for medium voltage applications such as low-voltage DC-DC converters and high-efficiency power management systems.
2. **VGS (gate-source voltage)**: ±20V
- This MOSFET supports a maximum gate-source voltage of ±20V, which means it is suitable for a variety of drive circuits, especially in applications with higher gate drive voltages.
3. **Vth (threshold voltage)**: 2.5V
- The threshold voltage is 2.5V, which means that the MOSFET will start to conduct at a relatively low gate-source voltage, enabling fast response and stable switching performance.
4. **RDS(ON) (On-resistance)**: 14mΩ (VGS = 4.5V), 12mΩ (VGS = 10V)
- STU446S-VB has very low on-resistance, which can effectively reduce power loss when working at high current. Its excellent RDS(ON) performance makes it excel in applications requiring high efficiency.
5. **ID (Drainage Current)**: 55A
- The maximum leakage current is 55A, which is suitable for high-current applications and can handle high load current without affecting performance, ensuring system stability.
6. **Technology**: Trench technology
- The STU446S-VB manufactured with Trench technology has efficient current conduction capability and fast switching response speed, which is particularly suitable for high-frequency switching circuits.
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Domain and module applications：
Application fields and module examples:
1. **Power management system**:
STU446S-VB is very suitable for efficient power management systems, especially in applications that require high current and low power loss, such as DC-DC converters, DC battery chargers, and power supply modules. Its low RDS(ON) can effectively reduce power loss, improve system efficiency, and extend battery life.
2. **Motor drive system**:
In motor drive applications, STU446S-VB performs well and can efficiently drive motors, especially for speed and direction control of stepper motors and DC motors. Low on-resistance allows the motor to run at high efficiency and reduce heat generation in the system.
3. **Switching power supply (SMPS)**:
Due to its low on-resistance and high leakage current carrying capacity, STU446S-VB is widely used in switching power supply modules (such as AC-DC adapters and power factor correction circuits). It can efficiently convert electrical energy and provide a stable output voltage.
4. **Automotive Electronics**:
In automotive electronic systems, the STU446S-VB can provide stable power control in complex power management applications. For example, in the battery management system (BMS), on-board charger and battery protection circuits of electric vehicles, the high current carrying capacity of MOSFET can ensure the safe and stable operation of the system.
5. **Inverter Systems**:
STU446S-VB is also suitable for inverter systems, such as solar inverters, wind inverters, etc., especially in situations where high-efficiency power conversion is required. It can maintain low conduction losses under high-frequency conversion and voltage fluctuations, ensuring system stability and efficiency.
6. **Load Switch and Power Protection Circuits**:
In load switch circuits and power protection modules, the STU446S-VB is suitable for high-speed switching and current protection functions. Its high current capability and low RDS(ON) characteristics make it an ideal choice to effectively manage current flow and prevent overcurrent or short-circuit conditions.
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STU446S-VB MOSFET is widely used in high-efficiency power conversion, motor drive, automotive electronics, inverter systems and load switching circuits due to its low on-resistance, extremely high leakage current carrying capacity and fast response characteristics. Its powerful performance makes it an ideal choice for various systems that require high current, high efficiency and low power loss.
1. **Power management system**:
STU446S-VB is very suitable for efficient power management systems, especially in applications that require high current and low power loss, such as DC-DC converters, DC battery chargers, and power supply modules. Its low RDS(ON) can effectively reduce power loss, improve system efficiency, and extend battery life.
2. **Motor drive system**:
In motor drive applications, STU446S-VB performs well and can efficiently drive motors, especially for speed and direction control of stepper motors and DC motors. Low on-resistance allows the motor to run at high efficiency and reduce heat generation in the system.
3. **Switching power supply (SMPS)**:
Due to its low on-resistance and high leakage current carrying capacity, STU446S-VB is widely used in switching power supply modules (such as AC-DC adapters and power factor correction circuits). It can efficiently convert electrical energy and provide a stable output voltage.
4. **Automotive Electronics**:
In automotive electronic systems, the STU446S-VB can provide stable power control in complex power management applications. For example, in the battery management system (BMS), on-board charger and battery protection circuits of electric vehicles, the high current carrying capacity of MOSFET can ensure the safe and stable operation of the system.
5. **Inverter Systems**:
STU446S-VB is also suitable for inverter systems, such as solar inverters, wind inverters, etc., especially in situations where high-efficiency power conversion is required. It can maintain low conduction losses under high-frequency conversion and voltage fluctuations, ensuring system stability and efficiency.
6. **Load Switch and Power Protection Circuits**:
In load switch circuits and power protection modules, the STU446S-VB is suitable for high-speed switching and current protection functions. Its high current capability and low RDS(ON) characteristics make it an ideal choice to effectively manage current flow and prevent overcurrent or short-circuit conditions.
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STU446S-VB MOSFET is widely used in high-efficiency power conversion, motor drive, automotive electronics, inverter systems and load switching circuits due to its low on-resistance, extremely high leakage current carrying capacity and fast response characteristics. Its powerful performance makes it an ideal choice for various systems that require high current, high efficiency and low power loss.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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