中文
English
STU407DH-VB Product details
Back to previous pageProduct introduction：
Product Introduction: STU407DH-VB
**Model**: STU407DH-VB
**Package Type**: TO252-4L
**Configuration**: Common Drain-N+P-Channel
**Maximum Drain-Source Voltage (VDS)**: ±40V
**Maximum Gate-Source Voltage (VGS)**: ±20V
**Threshold Voltage (Vth)**: 1.8V (N-channel), -1.7V (P-channel)
**On-resistance (RDS(ON))**: 14mΩ / 14mΩ @ VGS = 4.5V, 16mΩ / 16mΩ @ VGS = 10V
**Maximum Drain Current (ID)**: ±50A
**Technology Type**: Trench Technology
STU407DH-VB It is a dual MOSFET in TO252-4L package with common source N+P channel configuration, suitable for applications requiring bipolar current control and efficient current switching. The MOSFET supports ±40V drain-source voltage and provides extremely low on-resistance (RDS(ON)), which enables it to effectively reduce power loss in high current and high power applications. STU407DH-VB is particularly suitable for bipolar current control systems such as full-bridge circuits, power management, and motor drive applications.
---
**Model**: STU407DH-VB
**Package Type**: TO252-4L
**Configuration**: Common Drain-N+P-Channel
**Maximum Drain-Source Voltage (VDS)**: ±40V
**Maximum Gate-Source Voltage (VGS)**: ±20V
**Threshold Voltage (Vth)**: 1.8V (N-channel), -1.7V (P-channel)
**On-resistance (RDS(ON))**: 14mΩ / 14mΩ @ VGS = 4.5V, 16mΩ / 16mΩ @ VGS = 10V
**Maximum Drain Current (ID)**: ±50A
**Technology Type**: Trench Technology
STU407DH-VB It is a dual MOSFET in TO252-4L package with common source N+P channel configuration, suitable for applications requiring bipolar current control and efficient current switching. The MOSFET supports ±40V drain-source voltage and provides extremely low on-resistance (RDS(ON)), which enables it to effectively reduce power loss in high current and high power applications. STU407DH-VB is particularly suitable for bipolar current control systems such as full-bridge circuits, power management, and motor drive applications.
---
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P | ±40V | 1.8/-1.7V | ±50A | 16/16mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P | ±40V | 1.8/-1.7V | ±50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P | ±40V | 1.8/-1.7V | ±50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P |
Detailed parameter description:
1. **VDS (drain-source voltage)**: ±40V
- The maximum drain-source voltage of STU407DH-VB is ±40V, which is suitable for bipolar power supply applications and can withstand voltages in positive and negative directions. It is suitable for circuits such as power conversion, power management and motor control that require positive and negative voltage operations.
2. **VGS (gate-source voltage)**: ±20V
- The maximum gate-source voltage of this MOSFET is ±20V, which ensures good gate drive compatibility and can adapt to a variety of drive circuits, especially in complex switching circuits and speed regulation applications, and can provide efficient and reliable switching operation.
3. **Vth (threshold voltage)**: 1.8V (N channel), -1.7V (P channel)
- The threshold voltage is 1.8V (N channel) and -1.7V (P channel), which enables this MOSFET to start at a lower gate voltage, thereby providing a fast switching response. The low threshold voltage is suitable for low voltage drive applications and enhances the response speed of the system.
4. **RDS(ON) (On-resistance)**: 14mΩ / 14mΩ @ VGS = 4.5V, 16mΩ / 16mΩ @ VGS = 10V
- The on-resistance of this MOSFET is very low, 14mΩ at VGS = 4.5V and 16mΩ at VGS = 10V, which can provide efficient current transmission and reduce power loss, and is suitable for high current power management systems.
5. **ID (Drain Current)**: ±50A
- The maximum drain current is ±50A, which enables the STU407DH-VB to work stably under high current loads, suitable for applications that require high current control, such as motor drives, power conversion, etc.
6. **Technology**: Trench technology
- STU407DH-VB with Trench technology has excellent conductivity, low on-resistance and fast switching response, suitable for high-efficiency, high-frequency switching applications, reducing power loss and improving overall system efficiency.
---
1. **VDS (drain-source voltage)**: ±40V
- The maximum drain-source voltage of STU407DH-VB is ±40V, which is suitable for bipolar power supply applications and can withstand voltages in positive and negative directions. It is suitable for circuits such as power conversion, power management and motor control that require positive and negative voltage operations.
2. **VGS (gate-source voltage)**: ±20V
- The maximum gate-source voltage of this MOSFET is ±20V, which ensures good gate drive compatibility and can adapt to a variety of drive circuits, especially in complex switching circuits and speed regulation applications, and can provide efficient and reliable switching operation.
3. **Vth (threshold voltage)**: 1.8V (N channel), -1.7V (P channel)
- The threshold voltage is 1.8V (N channel) and -1.7V (P channel), which enables this MOSFET to start at a lower gate voltage, thereby providing a fast switching response. The low threshold voltage is suitable for low voltage drive applications and enhances the response speed of the system.
4. **RDS(ON) (On-resistance)**: 14mΩ / 14mΩ @ VGS = 4.5V, 16mΩ / 16mΩ @ VGS = 10V
- The on-resistance of this MOSFET is very low, 14mΩ at VGS = 4.5V and 16mΩ at VGS = 10V, which can provide efficient current transmission and reduce power loss, and is suitable for high current power management systems.
5. **ID (Drain Current)**: ±50A
- The maximum drain current is ±50A, which enables the STU407DH-VB to work stably under high current loads, suitable for applications that require high current control, such as motor drives, power conversion, etc.
6. **Technology**: Trench technology
- STU407DH-VB with Trench technology has excellent conductivity, low on-resistance and fast switching response, suitable for high-efficiency, high-frequency switching applications, reducing power loss and improving overall system efficiency.
---
Domain and module applications：
Application fields and module examples:
1. **Motor drive system**:
STU407DH-VB is suitable for motor drive systems, especially in applications that require precise control of current direction and amplitude, such as DC motor drive, stepper motor drive, etc. Its dual N+P channel configuration can effectively control the forward and reverse operation of the motor, and is widely used in power tools, electric vehicles, robots and other fields.
2. **DC-DC converter**:
This MOSFET can be used in full-bridge or half-bridge circuits in DC-DC converters, suitable for efficient power conversion. Low RDS(ON) and high current carrying capacity enable it to efficiently regulate input voltage and stabilize output voltage, and is widely used in power modules such as power adapters, chargers, UPS (uninterruptible power supply).
3. **Power management and load switch**:
STU407DH-VB has excellent performance in power management applications and can work as a load switch in various power modules. Its low on-resistance makes it particularly suitable for high-efficiency power systems, reducing power loss and improving the overall efficiency of the system. It is suitable for intelligent battery management, power distribution networks, etc.
4. **Inverter and AC-DC conversion**:
In applications such as solar inverters, wind energy conversion systems, and AC motor drives, STU407DH-VB is an ideal switching element. It can stably control high current loads and withstand bipolar voltage inputs, and is suitable for inverters and AC-DC converters that require efficient power conversion.
5. **Full-bridge circuit and half-bridge circuit**:
This type of MOSFET is particularly suitable for use in full-bridge and half-bridge circuits, which are widely used in switching power supplies, inverters, motor control, etc. The dual N+P channel configuration of STU407DH-VB provides more efficient current switching capabilities for such circuits, improving the working efficiency and reliability of the circuit.
6. **Load switching and protection circuit**:
In load switching and protection circuits, STU407DH-VB has low RDS(ON) and high current carrying capacity, suitable for use as an efficient current control switch. It is widely used in intelligent battery protection and automatic load disconnection circuits to ensure system stability and reliability and avoid damage caused by overcurrent or short circuit.
---
STU407DH-VB MOSFET is suitable for a variety of power management, motor control, load switching and power conversion fields. With its excellent conductivity and low power loss, it performs well in high current and high frequency applications. Its bipolar current control and efficient switching characteristics make it an ideal choice for systems such as power modules, motor drives and inverters.
1. **Motor drive system**:
STU407DH-VB is suitable for motor drive systems, especially in applications that require precise control of current direction and amplitude, such as DC motor drive, stepper motor drive, etc. Its dual N+P channel configuration can effectively control the forward and reverse operation of the motor, and is widely used in power tools, electric vehicles, robots and other fields.
2. **DC-DC converter**:
This MOSFET can be used in full-bridge or half-bridge circuits in DC-DC converters, suitable for efficient power conversion. Low RDS(ON) and high current carrying capacity enable it to efficiently regulate input voltage and stabilize output voltage, and is widely used in power modules such as power adapters, chargers, UPS (uninterruptible power supply).
3. **Power management and load switch**:
STU407DH-VB has excellent performance in power management applications and can work as a load switch in various power modules. Its low on-resistance makes it particularly suitable for high-efficiency power systems, reducing power loss and improving the overall efficiency of the system. It is suitable for intelligent battery management, power distribution networks, etc.
4. **Inverter and AC-DC conversion**:
In applications such as solar inverters, wind energy conversion systems, and AC motor drives, STU407DH-VB is an ideal switching element. It can stably control high current loads and withstand bipolar voltage inputs, and is suitable for inverters and AC-DC converters that require efficient power conversion.
5. **Full-bridge circuit and half-bridge circuit**:
This type of MOSFET is particularly suitable for use in full-bridge and half-bridge circuits, which are widely used in switching power supplies, inverters, motor control, etc. The dual N+P channel configuration of STU407DH-VB provides more efficient current switching capabilities for such circuits, improving the working efficiency and reliability of the circuit.
6. **Load switching and protection circuit**:
In load switching and protection circuits, STU407DH-VB has low RDS(ON) and high current carrying capacity, suitable for use as an efficient current control switch. It is widely used in intelligent battery protection and automatic load disconnection circuits to ensure system stability and reliability and avoid damage caused by overcurrent or short circuit.
---
STU407DH-VB MOSFET is suitable for a variety of power management, motor control, load switching and power conversion fields. With its excellent conductivity and low power loss, it performs well in high current and high frequency applications. Its bipolar current control and efficient switching characteristics make it an ideal choice for systems such as power modules, motor drives and inverters.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
