STU402D-VB Product details
Product introduction:
**STU402D-VB** is a **dual N-type MOSFET** in **TO252-4L package**. Its main features are **low on-resistance** and **high current carrying capacity**, which is suitable for **efficient power management** and **power conversion** applications. The **drain-source voltage (VDS)** of this MOSFET is **30V**, which can provide efficient and stable current control. Its **maximum drain current (ID)** reaches **32A**, which makes it perform well in high-current applications. **STU402D-VB** adopts **Trench technology** to provide low **RDS(ON)** (respectively **15mΩ** @VGS=4.5V and **9mΩ** @VGS=10V), significantly reducing power consumption and heat loss. This model is suitable for **efficient power conversion, load switching, battery management system** and other fields.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252-4L | Dual-N+N | 30V | 1.7V | 32A | 9mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252-4L | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252-4L | Dual-N+N | 30V | 1.7V | 32A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252-4L | Dual-N+N | 30V | 1.7V | 32A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252-4L | Dual-N+N |
- **Model**: STU402D-VB
- **Package type**: **TO252-4L** — Using **TO252-4L package**, the package provides better thermal management and current carrying capacity, suitable for high power applications.
- **Configuration**: **Dual-N+N-Channel** — Dual **N-type MOSFET** configuration, suitable for bidirectional current switching and power path control.
- **Drain-source voltage (VDS)**: **30V** — Supports a maximum drain-source voltage of **30V**, suitable for low voltage power supply systems.
- **Gate-source voltage (VGS)**: **±20V** — The gate-source voltage supports a maximum of **±20V**, adapting to various control signals.
- **Threshold voltage (Vth)**: **1.7V** — Starts at a low threshold voltage of **1.7V**, providing higher switching efficiency.
- **On-resistance (RDS(ON))**:
- **15mΩ @ VGS=4.5V**
- **9mΩ @ VGS=10V**
- Extremely low **RDS(ON)** ensures low power consumption and efficient current transfer, suitable for high-performance applications.
- **Maximum drain current (ID)**: **32A** — Supports higher current, suitable for high-load applications, and can achieve stable operation with low conduction loss.
- **Technology type**: **Trench technology** — Adopts **Trench technology** to ensure low on-resistance and higher switching frequency, improving overall energy efficiency.
Domain and module applications:
**STU402D-VB**'s high current capability, low on-resistance and high efficiency make it suitable for multiple high-efficiency power management and power conversion applications. The following are the application fields and modules of this product:
#### a) **Power management system**
This MOSFET is widely used in **power management systems**, especially in applications that require efficient current control and low power consumption. Its **32A** maximum drain current and **low on-resistance** characteristics make it very suitable for use in **DC-DC converters**, **AC-DC power converters**, **battery management systems**, etc., for power path switching and current control.
#### b) **Load switching and power path control**
**STU402D-VB** is suitable for **load switching** and **power path control**, such as in **intelligent power systems**, where switch control and power distribution are achieved through dual N-type configuration. Its **low RDS(ON)** and **high current carrying capacity** can be used for power management in **power tools, power equipment** and **wearable devices**.
#### c) **Electric Vehicles and Battery Management**
In **Battery Management Systems (BMS)** of **Electric Vehicles (EVs)**, **STU402D-VB** can be used as **battery current control switch** to help accurately control battery current during charging and discharging. Its high current capability and low on-resistance make it suitable for **EV charging management** and **battery charge and discharge control**, ensuring that the battery operates in an efficient and safe environment.
#### d) **LED Driver Power Supply**
In **LED Driver Power Supply**, **STU402D-VB** can be used as **current control switch** to support efficient **LED lighting control** and **backlight driving**. Low on-resistance ensures lower power consumption and higher light output efficiency, suitable for various **high brightness LED driver modules**.
#### e) **Power Factor Correction (PFC) Circuit**
**STU402D-VB** can be used in **Power Factor Correction (PFC) circuit**, especially in **AC power adapter** and **energy-saving power supply system**. The MOSFET provides efficient power conversion, reduces power factor mismatch, and improves the energy efficiency of the entire system.
#### f) **Industrial Automation Power Control**
In **industrial automation systems**, **STU402D-VB** can be used as **current switch** and **power path control**, suitable for **motor drive**, **variable frequency drive** and **smart grid** applications. Due to its high current carrying capacity and low on-resistance, it can handle larger power supply systems and is suitable for **industrial automation control systems**.
#### g) **Power Conversion and Battery-Powered Devices**
**STU402D-VB**'s efficient current control and low power consumption make it very suitable for **portable power devices**, **battery-powered modules** and **high-efficiency power converters**. It can help **battery-powered devices** achieve longer use time and higher energy efficiency, and is widely used in **portable electronic products, mobile power devices**, etc.
### Summary
**STU402D-VB** is a **dual N-type MOSFET** in **TO252-4L package** with high efficiency and low power consumption. Its high current capability and low on-resistance make it widely used in **power management, electric vehicles, LED driver power supplies, industrial automation** and other fields. Its **30V** drain-source voltage and **32A** drain current are suitable for handling high current and high power applications, and provide efficient current switching performance through **Trench technology**. This model is an ideal choice for high-efficiency power conversion and power control modules.
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