中文
English
STU3N45K3-VB Product details
Back to previous pageProduct introduction：
STU3N45K3-VB MOSFET Product Introduction
STU3N45K3-VB is a single N-channel MOSFET in TO251 package. It has the advantages of high voltage and low current applications and is suitable for systems that require higher drain-source voltage and stable switching characteristics. This MOSFET adopts Plannar technology, with a maximum drain-source voltage (VDS) of 650V and a maximum drain current (ID) of 2A. It is suitable for use in low and medium power applications such as power management, inverters, and power adapters.
Its threshold voltage (Vth) is 3.5V, which can achieve switching control at a lower gate voltage. When the gate voltage VGS=10V, the on-resistance (RDS(ON)) is 4300mΩ. This higher RDS(ON) characteristic means that it is mainly used in fields where the on-resistance requirements are not particularly stringent. Due to its high voltage carrying capacity, it is particularly suitable for power conversion, motor drive and general industrial control circuits.
STU3N45K3-VB is a single N-channel MOSFET in TO251 package. It has the advantages of high voltage and low current applications and is suitable for systems that require higher drain-source voltage and stable switching characteristics. This MOSFET adopts Plannar technology, with a maximum drain-source voltage (VDS) of 650V and a maximum drain current (ID) of 2A. It is suitable for use in low and medium power applications such as power management, inverters, and power adapters.
Its threshold voltage (Vth) is 3.5V, which can achieve switching control at a lower gate voltage. When the gate voltage VGS=10V, the on-resistance (RDS(ON)) is 4300mΩ. This higher RDS(ON) characteristic means that it is mainly used in fields where the on-resistance requirements are not particularly stringent. Due to its high voltage carrying capacity, it is particularly suitable for power conversion, motor drive and general industrial control circuits.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | 4300mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
STU3N45K3-VB MOSFET Detailed parameter description
- **Model**: STU3N45K3-VB
- **Package**: TO251
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 4300mΩ @ VGS=10V
- **Maximum drain current (ID)**: 2A
- **Technology**: Plannar
- **Operating temperature range**: -55°C to 150°C (typical)
- **Application**: power management, inverter, motor drive, power adapter, etc.
- **Model**: STU3N45K3-VB
- **Package**: TO251
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 4300mΩ @ VGS=10V
- **Maximum drain current (ID)**: 2A
- **Technology**: Plannar
- **Operating temperature range**: -55°C to 150°C (typical)
- **Application**: power management, inverter, motor drive, power adapter, etc.
Domain and module applications：
Application fields and modules of STU3N45K3-VB MOSFET
#### 1. **Power conversion system**
STU3N45K3-VB has high voltage resistance and suitable on-resistance, which is suitable for power conversion applications. Especially in environments requiring higher voltages, it can provide stable performance and is suitable for DC-DC converters, inverters and power management modules.
**Example**: In medium and high voltage power systems, STU3N45K3-VB can be used as a power switch component in high voltage power adapters or battery management systems to help achieve stable voltage conversion.
#### 2. **Motor drive**
Although the maximum drain current of this MOSFET is 2A, which is relatively low, it is still suitable for some low-power motor drive systems, especially power tools, electric fans and small motor control systems.
**Example**: In a power tool drive circuit, the STU3N45K3-VB can be used to drive a small motor, control the motor's on/off state, and ensure smooth operation of the power tool.
#### 3. **Inverter**
Due to its high withstand voltage characteristics, the STU3N45K3-VB is an ideal choice for use in inverter systems, especially for photovoltaic inverters or uninterruptible power supply (UPS) systems that require higher input voltages. Despite its high on-resistance, it is still suitable for low-current inverter designs.
**Example**: In a small photovoltaic inverter, the STU3N45K3-VB can be used as a current switch to help convert DC power to AC power, supporting home or small commercial photovoltaic systems.
#### 4. **Power Management System**
This MOSFET is suitable for some medium-power power management systems, especially where high withstand voltage and stable current control are required. Its higher RDS(ON) makes it suitable for systems where the power output does not require particularly precise and efficient switching.
**Example**: In power adapters and power modules, the STU3N45K3-VB can be used for current control of switching power supplies to help maintain stable voltage and current output.
#### 5. **High Voltage Power Adapter**
STU3N45K3-VB can also be widely used in power adapter designs, especially when operating at high voltages and the on-resistance requirements are not particularly strict. Its high drain-source voltage capability enables it to adapt to a variety of high voltage operating environments.
**Example**: In a high voltage AC-DC power adapter, the STU3N45K3-VB can be used to rectify the input AC current and output a stable voltage.
### Summary
STU3N45K3-VB is a MOSFET for high voltage and low current applications, with a maximum drain-source voltage of 650V and a maximum drain current of 2A. It is suitable for power management, motor drive, inverter and other fields, especially those applications that do not have particularly strict requirements on on-resistance. Although its on-resistance is relatively high, with its high voltage resistance and reliable performance, STU3N45K3-VB can still provide good switching control in some low current and high voltage environments, helping to improve the stability and efficiency of the system.
#### 1. **Power conversion system**
STU3N45K3-VB has high voltage resistance and suitable on-resistance, which is suitable for power conversion applications. Especially in environments requiring higher voltages, it can provide stable performance and is suitable for DC-DC converters, inverters and power management modules.
**Example**: In medium and high voltage power systems, STU3N45K3-VB can be used as a power switch component in high voltage power adapters or battery management systems to help achieve stable voltage conversion.
#### 2. **Motor drive**
Although the maximum drain current of this MOSFET is 2A, which is relatively low, it is still suitable for some low-power motor drive systems, especially power tools, electric fans and small motor control systems.
**Example**: In a power tool drive circuit, the STU3N45K3-VB can be used to drive a small motor, control the motor's on/off state, and ensure smooth operation of the power tool.
#### 3. **Inverter**
Due to its high withstand voltage characteristics, the STU3N45K3-VB is an ideal choice for use in inverter systems, especially for photovoltaic inverters or uninterruptible power supply (UPS) systems that require higher input voltages. Despite its high on-resistance, it is still suitable for low-current inverter designs.
**Example**: In a small photovoltaic inverter, the STU3N45K3-VB can be used as a current switch to help convert DC power to AC power, supporting home or small commercial photovoltaic systems.
#### 4. **Power Management System**
This MOSFET is suitable for some medium-power power management systems, especially where high withstand voltage and stable current control are required. Its higher RDS(ON) makes it suitable for systems where the power output does not require particularly precise and efficient switching.
**Example**: In power adapters and power modules, the STU3N45K3-VB can be used for current control of switching power supplies to help maintain stable voltage and current output.
#### 5. **High Voltage Power Adapter**
STU3N45K3-VB can also be widely used in power adapter designs, especially when operating at high voltages and the on-resistance requirements are not particularly strict. Its high drain-source voltage capability enables it to adapt to a variety of high voltage operating environments.
**Example**: In a high voltage AC-DC power adapter, the STU3N45K3-VB can be used to rectify the input AC current and output a stable voltage.
### Summary
STU3N45K3-VB is a MOSFET for high voltage and low current applications, with a maximum drain-source voltage of 650V and a maximum drain current of 2A. It is suitable for power management, motor drive, inverter and other fields, especially those applications that do not have particularly strict requirements on on-resistance. Although its on-resistance is relatively high, with its high voltage resistance and reliable performance, STU3N45K3-VB can still provide good switching control in some low current and high voltage environments, helping to improve the stability and efficiency of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
