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STU313D-VB Product details
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1. **STU313D-VB Product Introduction**
**STU313D-VB** is a **common source-N+P type MOSFET** in **TO252-4L package**, suitable for high current and high power applications. The device adopts **Trench technology**, providing low on-resistance and efficient current management capabilities. Its **drain-source voltage (VDS)** reaches **±60V**, which enables it to work stably in **positive and negative voltage applications**. Its **maximum drain current (ID)** is **35A (N type)** and **-19A (P type)**, respectively, which is suitable for handling larger currents and can effectively support power management and power conversion. The on-resistance (RDS(ON)) is 33mΩ (N-type) and 60mΩ (P-type) at VGS=4.5V, and 30mΩ (N-type) and 50mΩ (P-type) at VGS=10V, respectively, providing low power consumption and efficient current switching. The STU313D-VB is widely used in high-efficiency power management systems such as power conversion, load switching, and inverters.
**STU313D-VB** is a **common source-N+P type MOSFET** in **TO252-4L package**, suitable for high current and high power applications. The device adopts **Trench technology**, providing low on-resistance and efficient current management capabilities. Its **drain-source voltage (VDS)** reaches **±60V**, which enables it to work stably in **positive and negative voltage applications**. Its **maximum drain current (ID)** is **35A (N type)** and **-19A (P type)**, respectively, which is suitable for handling larger currents and can effectively support power management and power conversion. The on-resistance (RDS(ON)) is 33mΩ (N-type) and 60mΩ (P-type) at VGS=4.5V, and 30mΩ (N-type) and 50mΩ (P-type) at VGS=10V, respectively, providing low power consumption and efficient current switching. The STU313D-VB is widely used in high-efficiency power management systems such as power conversion, load switching, and inverters.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P | ±60V | 1.8/-1.7V | 35/-19A | 30/50mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P | ±60V | 1.8/-1.7V | 35/-19A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P | ±60V | 1.8/-1.7V | 35/-19A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P |
2. **Detailed parameter description**
- **Model**: STU313D-VB
- **Package type**: **TO252-4L** — The **TO252-4L** package is used, which is suitable for high-power applications, has good heat dissipation performance, and can effectively carry large currents.
- **Configuration**: **Common Drain-N+P-Channel** — **Common source configuration** combines **N-type** and **P-type** MOSFETs, suitable for symmetrical power switching and bidirectional current control.
- **Drain-source voltage (VDS)**: **±60V** — Supports **±60V** drain-source voltage, suitable for bipolar power systems and symmetrical voltage control applications.
- **Gate-source voltage (VGS)**: **±20V** — Can withstand a maximum **±20V** gate-source voltage, suitable for various control signals.
- **Threshold voltage (Vth)**:
- **N-type: 1.8V**
- **P-type: -1.7V**
- **On-resistance (RDS(ON))**:
- **N-type**: **33mΩ @ VGS=4.5V**, **30mΩ @ VGS=10V**
- **P-type**: **60mΩ @ VGS=4.5V**, **50mΩ @ VGS=10V**
- Low on-resistance ensures lower power consumption and efficient current transfer, suitable for high-efficiency power conversion and high-current applications.
- **Maximum drain current (ID)**:
- **N-type: 35A**
- **P-type: -19A**
- Supports larger current, suitable for switching control of high-power loads.
- **Technology Type**: **Trench Technology** — Using **Trench Technology** can provide lower on-resistance, improve switching efficiency, and optimize power loss.
- **Model**: STU313D-VB
- **Package type**: **TO252-4L** — The **TO252-4L** package is used, which is suitable for high-power applications, has good heat dissipation performance, and can effectively carry large currents.
- **Configuration**: **Common Drain-N+P-Channel** — **Common source configuration** combines **N-type** and **P-type** MOSFETs, suitable for symmetrical power switching and bidirectional current control.
- **Drain-source voltage (VDS)**: **±60V** — Supports **±60V** drain-source voltage, suitable for bipolar power systems and symmetrical voltage control applications.
- **Gate-source voltage (VGS)**: **±20V** — Can withstand a maximum **±20V** gate-source voltage, suitable for various control signals.
- **Threshold voltage (Vth)**:
- **N-type: 1.8V**
- **P-type: -1.7V**
- **On-resistance (RDS(ON))**:
- **N-type**: **33mΩ @ VGS=4.5V**, **30mΩ @ VGS=10V**
- **P-type**: **60mΩ @ VGS=4.5V**, **50mΩ @ VGS=10V**
- Low on-resistance ensures lower power consumption and efficient current transfer, suitable for high-efficiency power conversion and high-current applications.
- **Maximum drain current (ID)**:
- **N-type: 35A**
- **P-type: -19A**
- Supports larger current, suitable for switching control of high-power loads.
- **Technology Type**: **Trench Technology** — Using **Trench Technology** can provide lower on-resistance, improve switching efficiency, and optimize power loss.
Domain and module applications：
3. **Application fields and modules**
**STU313D-VB**'s high current capability and low on-resistance make it widely used in multiple high-efficiency power management and power conversion systems. The following are the application fields and modules of this product:
#### a) **Power management system**
Due to its high current carrying capacity and low on-resistance, **STU313D-VB** is suitable for various **power management systems**, especially those requiring bidirectional current control. Its common source configuration (N+P type) is very suitable for **power path switching**, **load switching** and **current inverter control** applications, such as **DC-DC converters, AC-DC power converters**, **battery management systems**, etc.
#### b) **Inverter and Power Conversion**
In **Inverter (Inverter)** and **Power Conversion System**, **STU313D-VB** can be used for **DC to AC** (DC-AC) or **AC to DC** (AC-DC) current control and conversion. Its high current capability and low on-resistance ensure efficient power conversion and are widely used in **solar inverters, electric vehicle charging systems, wind power generation systems** and other fields that require high-efficiency power conversion.
#### c) **Electric Vehicle (EV)**
In **Electric Vehicle (EV)** Systems, **STU313D-VB** can be used in **Battery Management System (BMS)** to control the charging and discharging process of the battery. Its high current capability and bidirectional current control characteristics make it very suitable for **Electric Vehicle Battery Current Management, Charging Control System** and other high-power power management modules.
#### d) **High-efficiency LED driver**
In **LED driver**, especially in high-efficiency, power-intensive applications, **STU313D-VB** can be used as a **current control switch**. Its low on-resistance and high current support make it suitable for **high-power LED driver, LED lighting control, backlight driver** and other applications to ensure efficient operation of the power system.
#### e) **Industrial Automation and Power Electronics**
**STU313D-VB** can be widely used for **power conversion and power management** in **industrial automation**. In **industrial power**, **power converter** and **high-power power modules**, the high current capability and high-efficiency performance of this MOSFET enable it to effectively support various **control systems, motor drives, smart grid** and other industrial applications.
#### f) **UPS (Uninterruptible Power System)**
In **UPS systems**, **STU313D-VB** can be used for **power path switches** and **current regulation modules**. This MOSFET supports high current and has low on-resistance, which can ensure that the UPS system switches power efficiently and stably when the power is interrupted, and reduce energy loss.
#### g) **Power Factor Correction (PFC)**
In **Power Factor Correction (PFC) circuits**, **STU313D-VB** can be used as the core switching element for power conversion and current regulation. By using **N-type and P-type MOSFETs** together, the power factor can be effectively improved, the power conversion process can be optimized, and the current fluctuation of the system can be reduced. It is widely used in **AC power adapters, chargers** and **energy-saving power systems**.
### Summary
**STU313D-VB** is a **common source-N+P type MOSFET** in **TO252-4L package**, with high current carrying capacity and low on-resistance, suitable for **power management, power conversion, inverter, LED drive, industrial automation** and other high-performance applications. Its **±60V** drain-source voltage and **35A** / **-19A** drain current enable it to handle large currents, and is widely used in **electric vehicles, solar power generation, battery management, UPS systems, power factor correction** and other fields.
**STU313D-VB**'s high current capability and low on-resistance make it widely used in multiple high-efficiency power management and power conversion systems. The following are the application fields and modules of this product:
#### a) **Power management system**
Due to its high current carrying capacity and low on-resistance, **STU313D-VB** is suitable for various **power management systems**, especially those requiring bidirectional current control. Its common source configuration (N+P type) is very suitable for **power path switching**, **load switching** and **current inverter control** applications, such as **DC-DC converters, AC-DC power converters**, **battery management systems**, etc.
#### b) **Inverter and Power Conversion**
In **Inverter (Inverter)** and **Power Conversion System**, **STU313D-VB** can be used for **DC to AC** (DC-AC) or **AC to DC** (AC-DC) current control and conversion. Its high current capability and low on-resistance ensure efficient power conversion and are widely used in **solar inverters, electric vehicle charging systems, wind power generation systems** and other fields that require high-efficiency power conversion.
#### c) **Electric Vehicle (EV)**
In **Electric Vehicle (EV)** Systems, **STU313D-VB** can be used in **Battery Management System (BMS)** to control the charging and discharging process of the battery. Its high current capability and bidirectional current control characteristics make it very suitable for **Electric Vehicle Battery Current Management, Charging Control System** and other high-power power management modules.
#### d) **High-efficiency LED driver**
In **LED driver**, especially in high-efficiency, power-intensive applications, **STU313D-VB** can be used as a **current control switch**. Its low on-resistance and high current support make it suitable for **high-power LED driver, LED lighting control, backlight driver** and other applications to ensure efficient operation of the power system.
#### e) **Industrial Automation and Power Electronics**
**STU313D-VB** can be widely used for **power conversion and power management** in **industrial automation**. In **industrial power**, **power converter** and **high-power power modules**, the high current capability and high-efficiency performance of this MOSFET enable it to effectively support various **control systems, motor drives, smart grid** and other industrial applications.
#### f) **UPS (Uninterruptible Power System)**
In **UPS systems**, **STU313D-VB** can be used for **power path switches** and **current regulation modules**. This MOSFET supports high current and has low on-resistance, which can ensure that the UPS system switches power efficiently and stably when the power is interrupted, and reduce energy loss.
#### g) **Power Factor Correction (PFC)**
In **Power Factor Correction (PFC) circuits**, **STU313D-VB** can be used as the core switching element for power conversion and current regulation. By using **N-type and P-type MOSFETs** together, the power factor can be effectively improved, the power conversion process can be optimized, and the current fluctuation of the system can be reduced. It is widely used in **AC power adapters, chargers** and **energy-saving power systems**.
### Summary
**STU313D-VB** is a **common source-N+P type MOSFET** in **TO252-4L package**, with high current carrying capacity and low on-resistance, suitable for **power management, power conversion, inverter, LED drive, industrial automation** and other high-performance applications. Its **±60V** drain-source voltage and **35A** / **-19A** drain current enable it to handle large currents, and is widely used in **electric vehicles, solar power generation, battery management, UPS systems, power factor correction** and other fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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