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STU309DH-VB Product details

Product introduction:

1. Product Introduction

**STU309DH-VB** is a bipolar N+P channel MOSFET in TO252-4L package, based on Trench technology, with a drain-source voltage (V_DS) of ±40V and a drain current (I_D) of up to ±50A. Its maximum gate-source voltage is ±20V, suitable for medium and low voltage high-efficiency switching applications. The product has a low on-resistance (R_DS(ON)) of 14mΩ (V_GS = 4.5V) and 16mΩ (V_GS = 10V), ensuring low power consumption while providing high current. The N-Channel and P-Channel configuration of STU309DH-VB makes it very suitable for providing efficient and stable power control in applications such as power management, power tools, load switches, etc.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252-4L Common Drain-N+P ±40V 1.8/-1.7V ±50A 16/16mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252-4L Common Drain-N+P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252-4L Common Drain-N+P ±40V 1.8/-1.7V ±50A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252-4L Common Drain-N+P ±40V 1.8/-1.7V ±50A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252-4L Common Drain-N+P
2. Detailed parameter description

- **Model**: STU309DH-VB
- **Package type**: TO252-4L
- **Configuration**: Common Drain - N+P-Channel
- **Drain-source voltage (V_DS)**: ±40V
- **Gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**:
- N-Channel: 1.8V
- P-Channel: -1.7V
- **On-resistance (R_DS(ON))**:
- N-Channel: 14mΩ @ V_GS = 4.5V
- P-Channel: 14mΩ @ V_GS = 4.5V
- N-Channel: 16mΩ @ V_GS = 10V
- P-Channel: 16mΩ @ V_GS = 10V
- **Maximum Drain Current (I_D)**: ±50A
- **Input Capacitance (C_GS)**: 2200pF
- **Output Capacitance (C_GD)**: 800pF
- **Reverse Recovery Time (t_rr)**: < 20ns
- **Maximum Power Dissipation (P_D)**: 100W
- **Technology Type**: Trench
- **Junction Temperature Range**: -55°C to +150°C
- **Package Type**: TO252-4L

Domain and module applications:

3. Application fields and module examples

1. **Power management system**:
The high efficiency of STU309DH-VB makes it particularly popular in power management systems. Its bipolar N+P-Channel configuration allows it to work in a variety of power conversion applications, including bidirectional DC-DC converters, forward and reverse power conversion, and power regulation. By using this MOSFET in the system, efficient power distribution and regulation can be achieved, especially providing excellent performance under high current power demand.

2. **Power tools and electric drive systems**:
In power tools and electric drive systems, STU309DH-VB can be used as a load switch, drive switch or power regulation switch. Due to its extremely low on-resistance, it can reduce energy loss, thereby improving the efficiency and battery life of power tools. Especially in the current switch of power tools, MOSFET can effectively improve the performance and service life of power tools.

3. **Battery Management System (BMS)**:
STU309DH-VB is suitable for current switching and overload protection functions in battery management systems (BMS). Its high current carrying capacity (±50A) enables it to withstand high power loads, and its low on-resistance helps reduce power losses during battery charging and discharging. The MOSFET can also regulate the current during the battery charging and discharging process to ensure safe and stable operation of the battery.

4. **Inverters and Solar Systems**:
In solar inverters and other power conversion systems, STU309DH-VB can be used as a power switching element. MOSFET provides a low on-resistance, which can reduce losses during power conversion and improve system efficiency. Due to its high current carrying capacity, this MOSFET is suitable for solar power generation systems that convert direct current (DC) to alternating current (AC) and handle higher power, ensuring stable and efficient power conversion.

5. **LED Driver**:
STU309DH-VB is widely used in LED driver power supply, especially for efficient current control. Its low on-resistance enables low power loss and high driving efficiency when driving high-power LED modules. In terms of lamp dimming and brightness control, this MOSFET can provide stable performance to meet the application requirements of small current fluctuation and high efficiency.

6. **Automotive Electronic System**:
In automotive electronic system, STU309DH-VB is suitable for multiple modules such as battery management, power regulation and motor control. The bipolar configuration of MOSFET enables it to provide flexibility in forward and reverse current regulation, which is especially suitable for battery management system and electric drive system of electric vehicles, which can effectively improve energy efficiency, reduce power consumption, and ensure efficient and stable operation of vehicle systems.

7. **Smart Home System**:
In smart home and automation systems, STU309DH-VB is used for power regulation, load switching and electric door and window control. Its small TO252-4L package makes it ideal for use in space-constrained environments, while its efficient switching performance helps extend the battery life of smart home devices and ensure continuous and stable operation of the devices.

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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