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STU307S-VB Product details
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STU307S-VB MOSFET Product Introduction
STU307S-VB is a high-performance single P-channel MOSFET in TO252 package, designed for high current applications. Its drain-source voltage (VDS) is -30V, the maximum gate-source voltage (VGS) is ±20V, and the threshold voltage (Vth) is -2.5V. The on-resistance (RDS(ON)) of this MOSFET is 13mΩ (VGS=4.5V) and 11mΩ (VGS=10V), respectively, and the maximum drain current (ID) is -60A. It is manufactured using Trench technology. STU307S-VB has extremely low on-resistance and excellent current carrying capacity, making it very suitable for use in high-power power supply and load control fields.
The high current capability and low on-resistance of STU307S-VB make it particularly suitable for high-efficiency power conversion, industrial drive systems, power management and battery management systems. Designed for applications requiring high switching efficiency and low power losses, this MOSFET can significantly improve overall system energy efficiency and reduce heat generation, making it an ideal choice for modern high-efficiency electronic systems.
STU307S-VB is a high-performance single P-channel MOSFET in TO252 package, designed for high current applications. Its drain-source voltage (VDS) is -30V, the maximum gate-source voltage (VGS) is ±20V, and the threshold voltage (Vth) is -2.5V. The on-resistance (RDS(ON)) of this MOSFET is 13mΩ (VGS=4.5V) and 11mΩ (VGS=10V), respectively, and the maximum drain current (ID) is -60A. It is manufactured using Trench technology. STU307S-VB has extremely low on-resistance and excellent current carrying capacity, making it very suitable for use in high-power power supply and load control fields.
The high current capability and low on-resistance of STU307S-VB make it particularly suitable for high-efficiency power conversion, industrial drive systems, power management and battery management systems. Designed for applications requiring high switching efficiency and low power losses, this MOSFET can significantly improve overall system energy efficiency and reduce heat generation, making it an ideal choice for modern high-efficiency electronic systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -30V | -2.5V | -60A | 11mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -30V | -2.5V | -60A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -30V | -2.5V | -60A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
Detailed parameter description
- **Package**: TO252
- **Configuration**: Single-P-Channel
- **Drain-Source Voltage (VDS)**: -30V
- **Gate-Source Voltage (VGS)**: ±20V
- **Threshold Voltage (Vth)**: -2.5V
- **On-Resistance (RDS(ON))**:
- 13mΩ (VGS=4.5V)
- 11mΩ (VGS=10V)
- **Maximum Drain Current (ID)**: -60A
- **Technology**: Trench technology
- **Package**: TO252
- **Configuration**: Single-P-Channel
- **Drain-Source Voltage (VDS)**: -30V
- **Gate-Source Voltage (VGS)**: ±20V
- **Threshold Voltage (Vth)**: -2.5V
- **On-Resistance (RDS(ON))**:
- 13mΩ (VGS=4.5V)
- 11mΩ (VGS=10V)
- **Maximum Drain Current (ID)**: -60A
- **Technology**: Trench technology
Domain and module applications：
Applications and module examples
1. **High-efficiency power converters (DC-DC converters)**:
STU307S-VB performs particularly well in power management applications, especially for high-efficiency DC-DC converters. The low on-resistance and high current carrying capacity of this MOSFET make it an ideal choice for buck and boost converters, which can significantly reduce energy losses and improve system efficiency. Whether in battery-powered systems, electric vehicles, mobile power supplies, or for power electronic devices, STU307S-VB can effectively reduce switching losses and improve conversion efficiency.
2. **Battery Management System (BMS)**:
In battery management systems, STU307S-VB plays a key load control role. Its high current carrying capacity (maximum ID = -60A) enables it to efficiently manage the charging and discharging process, while its low RDS(ON) reduces the power loss of the system. This MOSFET is particularly suitable for battery management systems (BMS) in electric vehicles (EVs), ensuring efficient battery charging and discharging, extending battery life, and improving overall system reliability.
3. **Electric Drive Systems**:
STU307S-VB is suitable for various electric drive systems, such as power tools, electric vehicle drive systems, and electric bicycles. The high current handling capability and low on-resistance of this MOSFET help improve the efficiency of electric drive systems, and it is particularly suitable for use in modules such as motor control, transmission control, and power regulation. Its high current carrying capacity (maximum ID = -60A) enables it to support high current drives, thereby providing smooth and efficient power output.
4. **Power Factor Correction (PFC) Circuits**:
STU307S-VB has important applications in power factor correction (PFC) circuits. Due to its excellent conductive properties, this MOSFET can effectively reduce switching losses, improve the energy efficiency of the overall power system, reduce harmonic interference, help improve the power factor, and reduce reactive power losses. STU307S-VB is suitable for high-efficiency power factor correction systems such as power modules, chargers, and power conversion equipment.
5. **Load Switch and Power Protection**:
As a load switch, STU307S-VB can play a role in power protection systems, especially in applications with overcurrent or overvoltage protection. It can quickly cut off the current to prevent circuit overload and protect sensitive components from damage. In high-current load control and power protection systems, STU307S-VB provides low power loss and fast response to ensure system stability and reliability.
6. **Industrial Automation and Robotics Systems**:
In industrial automation and robotics applications, STU307S-VB can be used to drive electric actuators, motors, and sensor modules. Its low on-resistance (RDS(ON)) ensures high efficiency and low energy consumption in these applications, and is suitable for applications with strict functional requirements such as high-speed switching, real-time feedback, and high-power drive. Especially in high-performance fields such as automated manufacturing, industrial robots and drones, STU307S-VB provides powerful power support.
1. **High-efficiency power converters (DC-DC converters)**:
STU307S-VB performs particularly well in power management applications, especially for high-efficiency DC-DC converters. The low on-resistance and high current carrying capacity of this MOSFET make it an ideal choice for buck and boost converters, which can significantly reduce energy losses and improve system efficiency. Whether in battery-powered systems, electric vehicles, mobile power supplies, or for power electronic devices, STU307S-VB can effectively reduce switching losses and improve conversion efficiency.
2. **Battery Management System (BMS)**:
In battery management systems, STU307S-VB plays a key load control role. Its high current carrying capacity (maximum ID = -60A) enables it to efficiently manage the charging and discharging process, while its low RDS(ON) reduces the power loss of the system. This MOSFET is particularly suitable for battery management systems (BMS) in electric vehicles (EVs), ensuring efficient battery charging and discharging, extending battery life, and improving overall system reliability.
3. **Electric Drive Systems**:
STU307S-VB is suitable for various electric drive systems, such as power tools, electric vehicle drive systems, and electric bicycles. The high current handling capability and low on-resistance of this MOSFET help improve the efficiency of electric drive systems, and it is particularly suitable for use in modules such as motor control, transmission control, and power regulation. Its high current carrying capacity (maximum ID = -60A) enables it to support high current drives, thereby providing smooth and efficient power output.
4. **Power Factor Correction (PFC) Circuits**:
STU307S-VB has important applications in power factor correction (PFC) circuits. Due to its excellent conductive properties, this MOSFET can effectively reduce switching losses, improve the energy efficiency of the overall power system, reduce harmonic interference, help improve the power factor, and reduce reactive power losses. STU307S-VB is suitable for high-efficiency power factor correction systems such as power modules, chargers, and power conversion equipment.
5. **Load Switch and Power Protection**:
As a load switch, STU307S-VB can play a role in power protection systems, especially in applications with overcurrent or overvoltage protection. It can quickly cut off the current to prevent circuit overload and protect sensitive components from damage. In high-current load control and power protection systems, STU307S-VB provides low power loss and fast response to ensure system stability and reliability.
6. **Industrial Automation and Robotics Systems**:
In industrial automation and robotics applications, STU307S-VB can be used to drive electric actuators, motors, and sensor modules. Its low on-resistance (RDS(ON)) ensures high efficiency and low energy consumption in these applications, and is suitable for applications with strict functional requirements such as high-speed switching, real-time feedback, and high-power drive. Especially in high-performance fields such as automated manufacturing, industrial robots and drones, STU307S-VB provides powerful power support.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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