STU150N3LLH6-VB Product details
Product introduction:
STU150N3LLH6-VB is a high-performance single N-channel MOSFET in TO251 package, designed for high-power applications. Its drain-source voltage (VDS) is 30V, the gate-source voltage (VGS) is ±20V at most, and has a threshold voltage (Vth) of 1.7V. The on-resistance (RDS(ON)) of this MOSFET is very low, 4.5mΩ (VGS=4.5V) and 3.5mΩ (VGS=10V), and it has a maximum drain current (ID) capability of 100A, and is manufactured using Trench technology. Low RDS(ON) and high current carrying capacity make it very suitable for high-efficiency power conversion, high-power load switching, electric drive systems and other occasions.
Due to its ultra-low on-resistance and high current carrying capacity, the STU150N3LLH6-VB is very suitable for high-power power management systems, such as high-power DC-DC converters, battery management systems, and power modules that require high-frequency switching. At the same time, this MOSFET performs well in high-efficiency battery drive systems and high-power power supply control, and can be widely used in industrial automation, consumer electronics, communication equipment and other fields.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 30V | 1.7V | 100A | 3.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
- **Package**: TO251
- **Configuration**: Single-N-Channel
- **Drain-Source Voltage (VDS)**: 30V
- **Gate-Source Voltage (VGS)**: ±20V
- **Threshold Voltage (Vth)**: 1.7V
- **On-Resistance (RDS(ON))**:
- 4.5mΩ (VGS=4.5V)
- 3.5mΩ (VGS=10V)
- **Maximum Drain Current (ID)**: 100A
- **Technology**: Trench technology
Domain and module applications:
1. **High-efficiency power converter (DC-DC converter)**:
STU150N3LLH6-VB MOSFET performs well in high-efficiency power converters, especially for DC-DC converter applications that require large current handling and high-frequency switching, such as buck converters and boost converters. Its ultra-low on-resistance (RDS(ON)) and high current carrying capacity make it an ideal choice for high-power power modules, which can significantly improve power conversion efficiency, reduce power loss, and reduce heat generation, ensuring long-term stable operation of the system.
2. **Battery Management System (BMS)**:
In the battery management system (BMS), STU150N3LLH6-VB MOSFET, as a switching element, can efficiently manage the battery charging and discharging process, ensure stable operation of the battery and prevent overcharging and over-discharging. Its low on-resistance and high current carrying capacity enable it to withstand the high currents generated during battery charging and discharging, reducing energy losses in battery management, thereby extending battery life and improving overall system efficiency. It is particularly suitable for applications that require efficient battery management, such as electric vehicles, power tools, and wearable devices.
3. **Electric drive system**:
STU150N3LLH6-VB is particularly important in electric drive systems, especially in high-power drive applications such as electric vehicles (EVs), power tools, and robots. It can handle a maximum current of 100A and is suitable for driving motors and other loads. The low on-resistance of the MOSFET helps reduce power losses and improve the efficiency of the drive system, making the operation of the electric drive system more stable and efficient.
4. **High-frequency switching power supply**:
Due to its low RDS(ON) and high current capability, the STU150N3LLH6-VB is suitable for high-frequency switching power supply systems, such as efficient AC-DC power supplies, power factor correction (PFC) circuits, etc. It can work at high frequency, provide higher conversion efficiency, and reduce energy loss in power supply system, which is especially suitable for high-power communication equipment, server power supply and high-power charger.
5. **Industrial Automation and Control**:
In industrial automation systems, STU150N3LLH6-VB can be used for switching and power control of various high-power loads. For example, in industrial motor drives, robot control systems and automation equipment, STU150N3LLH6-VB can stably switch high-current loads and provide efficient power transmission to ensure the efficiency and stability of equipment operation. Its high current carrying capacity adapts to the high power requirements in industrial automation systems.
6. **Power Protection and Load Switching**:
STU150N3LLH6-VB MOSFET can also be used for power protection and load switching applications, especially in high-power power modules. For example, in uninterruptible power supplies (UPS) and battery pack protection circuits, the STU150N3LLH6-VB can effectively switch the connection between the power supply and the load to prevent overcurrent and overvoltage from damaging the system. At the same time, its low on-resistance and high current capability ensure fast load switching and safety protection.
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