中文
English
STU11NM60ND-VB Product details
Back to previous pageProduct introduction：
1. **STU11NM60ND-VB Product Introduction**
**STU11NM60ND-VB** is a **single N-type MOSFET**, using **TO251 package**, with **650V** drain-source voltage (VDS) and **11A** maximum drain current (ID). This MOSFET adopts **SJ_Multi-EPI** technology, providing efficient power switch solutions for various high-voltage and high-power applications. Its **threshold voltage (Vth)** is **3.5V**, and it has excellent switching characteristics under high voltage and high current load. Its **on-resistance (RDS(ON))** is **370mΩ** @ **VGS = 10V**, providing low conduction loss, suitable for high-efficiency power conversion and control systems. This MOSFET is particularly suitable for **power management systems, switching power supplies, inverters** and other fields.
**STU11NM60ND-VB** is a **single N-type MOSFET**, using **TO251 package**, with **650V** drain-source voltage (VDS) and **11A** maximum drain current (ID). This MOSFET adopts **SJ_Multi-EPI** technology, providing efficient power switch solutions for various high-voltage and high-power applications. Its **threshold voltage (Vth)** is **3.5V**, and it has excellent switching characteristics under high voltage and high current load. Its **on-resistance (RDS(ON))** is **370mΩ** @ **VGS = 10V**, providing low conduction loss, suitable for high-efficiency power conversion and control systems. This MOSFET is particularly suitable for **power management systems, switching power supplies, inverters** and other fields.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 11A | 370mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
2. **Detailed parameter description**
- **Model**: STU11NM60ND-VB
- **Package type**: **TO251** — Using TO251 package, suitable for medium-power electronic applications, with good thermal management and voltage resistance, suitable for high-power switching power supplies, inverters and power adapters.
- **Configuration**: **Single-N-Channel** — Single N-type MOSFET, suitable for a variety of switching power supplies and load control applications.
- **Drain-source voltage (VDS)**: **650V** — Supports a maximum drain-source voltage of up to **650V**, suitable for high-voltage applications such as AC-DC converters, inverters and other high-power switching power supplies.
- **Gate-source voltage (VGS)**: **±30V** — Supports a maximum gate-source voltage of **±30V**, which can adapt to a variety of driving voltage environments.
- **Threshold Voltage (Vth)**: **3.5V** — When the gate-source voltage reaches **3.5V**, the MOSFET starts to turn on, which is suitable for low-voltage controlled switching power supplies and power conversion systems.
- **On-resistance (RDS(ON))**:
- **370mΩ @ VGS=10V** — When the gate-source voltage is **10V**, the on-resistance is **370mΩ**, which is suitable for medium current high-efficiency switching applications and can reduce switching losses.
- **Maximum Drain Current (ID)**: **11A** — Supports a maximum drain current of **11A**, which is suitable for switching control of large current loads, especially in high-efficiency power supply designs.
- **Technology Type**: **SJ_Multi-EPI** — Using **SJ_Multi-EPI** technology, the switching speed and efficiency of MOSFET are enhanced, providing lower on-resistance and better thermal management characteristics.
- **Model**: STU11NM60ND-VB
- **Package type**: **TO251** — Using TO251 package, suitable for medium-power electronic applications, with good thermal management and voltage resistance, suitable for high-power switching power supplies, inverters and power adapters.
- **Configuration**: **Single-N-Channel** — Single N-type MOSFET, suitable for a variety of switching power supplies and load control applications.
- **Drain-source voltage (VDS)**: **650V** — Supports a maximum drain-source voltage of up to **650V**, suitable for high-voltage applications such as AC-DC converters, inverters and other high-power switching power supplies.
- **Gate-source voltage (VGS)**: **±30V** — Supports a maximum gate-source voltage of **±30V**, which can adapt to a variety of driving voltage environments.
- **Threshold Voltage (Vth)**: **3.5V** — When the gate-source voltage reaches **3.5V**, the MOSFET starts to turn on, which is suitable for low-voltage controlled switching power supplies and power conversion systems.
- **On-resistance (RDS(ON))**:
- **370mΩ @ VGS=10V** — When the gate-source voltage is **10V**, the on-resistance is **370mΩ**, which is suitable for medium current high-efficiency switching applications and can reduce switching losses.
- **Maximum Drain Current (ID)**: **11A** — Supports a maximum drain current of **11A**, which is suitable for switching control of large current loads, especially in high-efficiency power supply designs.
- **Technology Type**: **SJ_Multi-EPI** — Using **SJ_Multi-EPI** technology, the switching speed and efficiency of MOSFET are enhanced, providing lower on-resistance and better thermal management characteristics.
Domain and module applications：
### 3. **Applicable fields and modules**
**STU11NM60ND-VB**'s high withstand voltage capability, excellent switching characteristics and low on-resistance make it very suitable for high-power, high-voltage power management systems, especially in the fields of high-efficiency switching power supplies, inverters, power conversion, etc. The following are the specific applications of this MOSFET:
#### a) **Switching Power Supply (SMPS)**
**STU11NM60ND-VB** can be used as the core switching element of **Switching Power Supply (SMPS)**, especially suitable for **AC-DC converter** and **DC-DC converter**. Its **650V** drain-source voltage and **11A** current capability enable it to withstand large voltage and current fluctuations, and is suitable for consumer electronic power systems such as home appliances, computer power supplies, and TVs.
#### b) **Inverter**
In **Inverter**, **STU11NM60ND-VB** is used for **DC-AC conversion**, converting high voltage DC power into AC power. Its **SJ_Multi-EPI technology** can improve switching efficiency and reduce losses, and is particularly suitable for **solar inverter** and **power electronic inverter**. The **high withstand voltage capability** of this MOSFET makes it suitable for inverter systems that require high withstand voltage, ensuring long-term stable operation of the system.
#### c) **Power Conversion and Power Factor Correction**
In **power conversion systems**, especially for **power factor correction (PFC)**, **STU11NM60ND-VB** can help improve system efficiency and reduce energy loss. Its **low on-resistance** and **efficient switching characteristics** make it outstanding in **PFC circuits** that require high-precision current regulation, especially in industrial power supplies and server power systems.
#### d) **High-voltage power management**
In **high-voltage power management systems**, **STU11NM60ND-VB** can be used to control the switching process of high voltage and high current. Its **650V** drain-source voltage makes it suitable for high-voltage environments and is widely used in power management of industrial and home appliances such as **power tools** and **electric vehicle charging piles**.
#### e) **Industrial power systems**
In **industrial power systems**, **STU11NM60ND-VB** can be used for **power conversion and current control**, such as **PLC power modules**, **power modules**, etc., to help provide a stable power supply. Due to its **high withstand voltage and high current handling capabilities**, it is suitable for industrial control equipment that requires high power conversion and regulation.
#### f) **Electric Vehicle (EV) Battery Management**
In the battery management and battery charging process of **Electric Vehicle (EV)**, **STU11NM60ND-VB** can be used as a switching element. Through its high-efficiency current switching and excellent thermal management characteristics, it can effectively regulate the battery charging and discharging process, improving the battery's energy efficiency and life cycle.
#### g) **Solar Power Generation System**
In **Solar Power Generation System**, **STU11NM60ND-VB** is used in the inverter of the solar panel to help convert the direct current generated by the sun into alternating current. Due to its high voltage resistance, it is very suitable for use in solar power generation systems, especially in systems that require **high power conversion efficiency**.
### Summary
**STU11NM60ND-VB** is a high-performance **650V single N-type MOSFET**, using **TO251 package**, with high voltage tolerance and high current handling capabilities, suitable for use in switching power supplies, power conversion, inverters and other fields. Its **SJ_Multi-EPI technology** provides low on-resistance and high-efficiency switching characteristics, making it perform well in high-power power systems, effectively reducing losses and improving system efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
