STU10NM60N-VB Product details
Product introduction:
STU10NM60N-VB is a single N-channel MOSFET in TO251 package, suitable for high voltage and high power applications. It has a drain-source voltage (VDS) of 650V and a maximum gate-source voltage of ±30V, suitable for power conversion, motor drive and high voltage switching circuits. This MOSFET adopts SJ_Multi-EPI technology and has a low on-resistance (RDS(ON) = 500mΩ@VGS=10V), providing excellent switching performance and low energy loss.
The threshold voltage (Vth) of STU10NM60N-VB is 3.5V, which can start at a lower gate voltage, making it very suitable for applications requiring high withstand voltage and high stability. Its maximum drain current is 9A, suitable for power conversion, motor control, inverter and other high power application scenarios. The high withstand voltage characteristics of STU10NM60N-VB enable it to work stably in high voltage environments. It is an indispensable component in power electronic equipment, especially in motor drives, inverters, power supplies and high-voltage switching circuits.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 9A | 500mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
- **Package type: ** TO251
- **Configuration: ** Single-N-Channel
- **Maximum drain-source voltage (VDS): ** 650V
- **Maximum gate-source voltage (VGS): ** ±30V
- **Threshold voltage (Vth): ** 3.5V
- **On-resistance (RDS(ON)): ** 500mΩ @ VGS=10V
- **Maximum drain current (ID): ** 9A
- **Technology: ** SJ_Multi-EPI
- **Application areas: ** Power conversion, motor drive, inverter, energy management, power switch
Domain and module applications:
**1. Power conversion system: **
STU10NM60N-VB is widely used in high voltage power conversion systems, especially for AC-DC or DC-DC converters. Due to its high withstand voltage capability (650V), it can work stably in high voltage power supply environment, suitable for transformers, DC power supply systems and high power power supply modules. In these power conversion systems, STU10NM60N-VB can effectively reduce power loss in the conversion process and improve the overall efficiency of the system.
**2. Motor drive and control: **
This MOSFET is very important in motor drive applications, especially in the drive control circuits of high power motors, such as power tools, electric vehicle drive systems and industrial automation systems. Due to its low on-resistance and high voltage withstand capability, it can reduce energy loss when driving the motor, while providing higher power output and control accuracy. The high voltage withstand characteristics of STU10NM60N-VB enable it to maintain a stable working state when the motor starts, changes speed and changes load.
**3. Inverters and energy management: **
STU10NM60N-VB is widely used in inverters, especially in energy management systems such as solar inverters, battery storage systems and uninterruptible power supplies (UPS). Inverters require high-efficiency MOSFETs to achieve DC to AC conversion. With its high withstand voltage performance of 650V and low on-resistance, STU10NM60N-VB can effectively reduce conversion losses and maintain efficient operation of the inverter system. This MOSFET is also suitable for high-voltage power conversion and power dispatching, ensuring the high efficiency and stability of the system.
**4. High-voltage power switching circuits: **
Due to the high drain-source voltage (650V) and good switching characteristics of STU10NM60N-VB, it is very suitable for high-voltage power switching circuits. In switching power supplies, power systems, lighting control systems, etc., STU10NM60N-VB can effectively control the flow of power and ensure the stability and safety of the circuit under high voltage. Whether in household power systems or industrial power systems, this MOSFET can provide stable switching performance and good power conversion effects.
**5. Power electronic equipment: **
STU10NM60N-VB is also suitable for various power electronic equipment, especially high-power electronic modules. These devices usually require efficient switching devices to ensure efficient energy conversion and minimized heat loss. With its excellent performance, STU10NM60N-VB has become an indispensable key component in power electronic applications and is widely used in industrial power control systems, power conditioners, and high-frequency switching power supplies.
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