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STU09N25-VB Product details
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**Product Introduction: STU09N25-VB**
STU09N25-VB is a single N-type MOSFET in TO252 package, with high voltage resistance and stable performance, suitable for high voltage applications and power switches. Its maximum drain-source voltage (VDS) is 250V, suitable for applications that need to withstand higher voltages. The gate-source threshold voltage (Vth) of this MOSFET is 3.5V, which means that it can start to conduct at a lower gate voltage and is compatible with common 5V and 10V control signals. The on-resistance (RDS(ON)) of STU09N25-VB is 176mΩ at VGS=10V, which can effectively control power loss and provide good conductivity. Its maximum drain current (ID) is 17A, suitable for switching applications with medium current loads. This MOSFET uses Trench technology to optimize its conduction performance and thermal management capabilities, and is widely used in power management, power conversion and other applications.
STU09N25-VB is a single N-type MOSFET in TO252 package, with high voltage resistance and stable performance, suitable for high voltage applications and power switches. Its maximum drain-source voltage (VDS) is 250V, suitable for applications that need to withstand higher voltages. The gate-source threshold voltage (Vth) of this MOSFET is 3.5V, which means that it can start to conduct at a lower gate voltage and is compatible with common 5V and 10V control signals. The on-resistance (RDS(ON)) of STU09N25-VB is 176mΩ at VGS=10V, which can effectively control power loss and provide good conductivity. Its maximum drain current (ID) is 17A, suitable for switching applications with medium current loads. This MOSFET uses Trench technology to optimize its conduction performance and thermal management capabilities, and is widely used in power management, power conversion and other applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 250V | 3.5V | 17A | 176mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 250V | 3.5V | 17A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 250V | 3.5V | 17A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
**Detailed parameter description:**
- **Model**: STU09N25-VB
- **Package type**: TO252
- **Configuration**: Single N-type MOSFET
- **Maximum drain-source voltage (VDS)**: 250V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate-source threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- RDS(ON) @ VGS=10V: 176mΩ
- **Maximum leakage current (ID)**: 17A
- **Technology type**: Trench (deep trench technology)
- **Operating temperature range**: -55°C to +150°C
- **Application type**: high voltage power switch, power conversion, power management, etc.
- **Model**: STU09N25-VB
- **Package type**: TO252
- **Configuration**: Single N-type MOSFET
- **Maximum drain-source voltage (VDS)**: 250V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate-source threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- RDS(ON) @ VGS=10V: 176mΩ
- **Maximum leakage current (ID)**: 17A
- **Technology type**: Trench (deep trench technology)
- **Operating temperature range**: -55°C to +150°C
- **Application type**: high voltage power switch, power conversion, power management, etc.
Domain and module applications：
**Application fields and module examples:**
1. **High-voltage power management and switch control**:
STU09N25-VB has a withstand voltage of 250V and is suitable for high-voltage power management and switch control applications. For example, it can control the switch of high-voltage paths in devices such as power adapters, battery chargers, and switching power supplies. Due to its low on-resistance (RDS(ON)=176mΩ), this MOSFET can effectively reduce power losses and improve the overall power system efficiency.
2. **Power conversion system**:
In power conversion systems such as DC-DC converters, power adapters, and UPS (uninterruptible power supplies), STU09N25-VB can be used as a switching element to ensure efficient power conversion and stable output voltage. Its high withstand voltage capability enables it to withstand higher input voltages, thus performing well in applications that require higher safety.
3. **LED driver and battery management system**:
STU09N25-VB can be used in LED driver and battery management system, especially in high voltage applications. It can play a role in driving high power loads (such as LED modules, motor drive circuits, etc.), providing stable current control and efficient power switching functions. In addition, as a switching element in the battery management system, it can control the battery charging and discharging process to ensure the safety and efficiency of the system.
4. **Industrial power supply application**:
In industrial power supply systems, STU09N25-VB is suitable for applications requiring high voltage tolerance, such as industrial controllers, automation equipment, robots, etc. These devices usually require higher power supply voltages and larger load currents. STU09N25-VB can provide the required current carrying capacity and reduce heat loss to ensure long-term stable operation.
5. **Automotive electronic system**:
STU09N25-VB can also be used in automotive electronic systems, especially in battery management systems and high-voltage power supply systems for electric or hybrid vehicles. In these applications, the MOSFET can control battery charging and discharging, power path switching, ensure power stability and reduce energy loss.
1. **High-voltage power management and switch control**:
STU09N25-VB has a withstand voltage of 250V and is suitable for high-voltage power management and switch control applications. For example, it can control the switch of high-voltage paths in devices such as power adapters, battery chargers, and switching power supplies. Due to its low on-resistance (RDS(ON)=176mΩ), this MOSFET can effectively reduce power losses and improve the overall power system efficiency.
2. **Power conversion system**:
In power conversion systems such as DC-DC converters, power adapters, and UPS (uninterruptible power supplies), STU09N25-VB can be used as a switching element to ensure efficient power conversion and stable output voltage. Its high withstand voltage capability enables it to withstand higher input voltages, thus performing well in applications that require higher safety.
3. **LED driver and battery management system**:
STU09N25-VB can be used in LED driver and battery management system, especially in high voltage applications. It can play a role in driving high power loads (such as LED modules, motor drive circuits, etc.), providing stable current control and efficient power switching functions. In addition, as a switching element in the battery management system, it can control the battery charging and discharging process to ensure the safety and efficiency of the system.
4. **Industrial power supply application**:
In industrial power supply systems, STU09N25-VB is suitable for applications requiring high voltage tolerance, such as industrial controllers, automation equipment, robots, etc. These devices usually require higher power supply voltages and larger load currents. STU09N25-VB can provide the required current carrying capacity and reduce heat loss to ensure long-term stable operation.
5. **Automotive electronic system**:
STU09N25-VB can also be used in automotive electronic systems, especially in battery management systems and high-voltage power supply systems for electric or hybrid vehicles. In these applications, the MOSFET can control battery charging and discharging, power path switching, ensure power stability and reduce energy loss.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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