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STU06L01-VB Product details
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Product Introduction: STU06L01-VB
**Model**: STU06L01-VB
**Package Type**: TO252
**Configuration**: Single-N-Channel
**Maximum Drain-Source Voltage (VDS)**: 100V
**Maximum Gate-Source Voltage (VGS)**: ±20V
**Threshold Voltage (Vth)**: 1.8V
**On-Resistance (RDS(ON))**: 114mΩ @ VGS = 10V
**Maximum Drain Current (ID)**: 15A
**Technology Type**: Trench Technology
STU06L01-VB is a high-efficiency single N-channel MOSFET in TO252 package for high voltage power management and power delivery applications. With a maximum drain-source voltage (VDS) of 100V and a drain current (ID) of 15A, it is capable of handling higher power application loads. The MOSFET has a low on-resistance of 114mΩ at a gate voltage of 10V, reducing energy loss and heat accumulation, thereby improving overall system efficiency. Using Trench technology, the STU06L01-VB excels in performance and power optimization, and is suitable for a variety of power switching and power control applications.
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**Model**: STU06L01-VB
**Package Type**: TO252
**Configuration**: Single-N-Channel
**Maximum Drain-Source Voltage (VDS)**: 100V
**Maximum Gate-Source Voltage (VGS)**: ±20V
**Threshold Voltage (Vth)**: 1.8V
**On-Resistance (RDS(ON))**: 114mΩ @ VGS = 10V
**Maximum Drain Current (ID)**: 15A
**Technology Type**: Trench Technology
STU06L01-VB is a high-efficiency single N-channel MOSFET in TO252 package for high voltage power management and power delivery applications. With a maximum drain-source voltage (VDS) of 100V and a drain current (ID) of 15A, it is capable of handling higher power application loads. The MOSFET has a low on-resistance of 114mΩ at a gate voltage of 10V, reducing energy loss and heat accumulation, thereby improving overall system efficiency. Using Trench technology, the STU06L01-VB excels in performance and power optimization, and is suitable for a variety of power switching and power control applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | 114mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description:
1. **VDS (drain-source voltage)**: 100V
- The maximum drain-source voltage of STU06L01-VB is 100V, which is suitable for power management systems operating at higher voltages, such as high-voltage DC-DC converters, inverters, etc., and can safely withstand voltage fluctuations of up to 100V.
2. **VGS (gate-source voltage)**: ±20V
- The maximum gate-source voltage of this MOSFET is ±20V, making it compatible with a variety of control circuits, especially suitable for power management systems driven by logic control signals, and supports most logic level controls.
3. **Vth (threshold voltage)**: 1.8V
- The threshold voltage is 1.8V, which means that STU06L01-VB can start working at a lower gate voltage. This enables it to effectively respond to low-voltage control signals and is suitable for use under low voltage conditions.
4. **RDS(ON)**: 114mΩ @ VGS = 10V
- At VGS = 10V, the on-resistance is 114mΩ. Low on-resistance means less power loss and heat accumulation, which improves efficiency and is suitable for high-current and high-efficiency applications, especially in switching power supplies and load control.
5. **ID(leakage current)**: 15A
- The maximum leakage current of STU06L01-VB is 15A, which is suitable for high-power load applications such as power modules, motor drives, etc. The high current carrying capacity makes it an ideal choice for industrial applications.
6. **Technology**: Trench technology
- Trench technology enables STU06L01-VB to have high switching efficiency and low power consumption while maintaining low on-resistance, which is suitable for scenarios requiring fast switching and low energy consumption.
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1. **VDS (drain-source voltage)**: 100V
- The maximum drain-source voltage of STU06L01-VB is 100V, which is suitable for power management systems operating at higher voltages, such as high-voltage DC-DC converters, inverters, etc., and can safely withstand voltage fluctuations of up to 100V.
2. **VGS (gate-source voltage)**: ±20V
- The maximum gate-source voltage of this MOSFET is ±20V, making it compatible with a variety of control circuits, especially suitable for power management systems driven by logic control signals, and supports most logic level controls.
3. **Vth (threshold voltage)**: 1.8V
- The threshold voltage is 1.8V, which means that STU06L01-VB can start working at a lower gate voltage. This enables it to effectively respond to low-voltage control signals and is suitable for use under low voltage conditions.
4. **RDS(ON)**: 114mΩ @ VGS = 10V
- At VGS = 10V, the on-resistance is 114mΩ. Low on-resistance means less power loss and heat accumulation, which improves efficiency and is suitable for high-current and high-efficiency applications, especially in switching power supplies and load control.
5. **ID(leakage current)**: 15A
- The maximum leakage current of STU06L01-VB is 15A, which is suitable for high-power load applications such as power modules, motor drives, etc. The high current carrying capacity makes it an ideal choice for industrial applications.
6. **Technology**: Trench technology
- Trench technology enables STU06L01-VB to have high switching efficiency and low power consumption while maintaining low on-resistance, which is suitable for scenarios requiring fast switching and low energy consumption.
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Domain and module applications：
Application fields and module examples:
1. **Power management system**:
STU06L01-VB is very suitable for efficient power management systems such as DC-DC converters, AC-DC power adapters, etc. Its high leakage current and low on-resistance enable it to provide low power loss and high efficiency during the conversion process, and is widely used in battery-powered systems, portable devices and smart grids.
2. **Motor drive and control system**:
In motor drive modules, STU06L01-VB can handle higher currents and voltages and provide efficient switching control. It is suitable for various motor drive systems, especially in applications that require high current load drive, such as power tools, electric vehicle drive systems and robot control systems.
3. **Inverter and power conversion system**:
Due to its high current carrying capacity and low RDS(ON), STU06L01-VB is suitable for inverters and other power conversion modules, which can efficiently convert DC to AC, or regulate the flow of voltage and current. It can be widely used in solar inverters, power adapters and power electronic devices.
4. **Power Control and Load Switch**:
STU06L01-VB can provide precise switching control in various load switches and power control modules, especially for applications requiring fast response and low power consumption, such as communication equipment, smart home power management systems, etc.
5. **LED Driver**:
In LED driver power systems, STU06L01-VB is suitable for efficiently driving LED lighting systems and providing precise current control. The low on-resistance and high current carrying capacity of MOSFET make it play an important role in improving LED brightness and extending LED life.
6. **Smart Battery Charging System**:
The high current handling capability of STU06L01-VB makes it an ideal choice for smart battery charging systems, especially for charging modules of portable electronic products. During the battery charging process, MOSFET can effectively regulate the current flow, avoid overcharging, and protect the battery safety.
With its low on-resistance and high current carrying capability, STU06L01-VB excels in power-intensive applications and is particularly suitable for various power management, motor drive, inverter and LED drive fields.
1. **Power management system**:
STU06L01-VB is very suitable for efficient power management systems such as DC-DC converters, AC-DC power adapters, etc. Its high leakage current and low on-resistance enable it to provide low power loss and high efficiency during the conversion process, and is widely used in battery-powered systems, portable devices and smart grids.
2. **Motor drive and control system**:
In motor drive modules, STU06L01-VB can handle higher currents and voltages and provide efficient switching control. It is suitable for various motor drive systems, especially in applications that require high current load drive, such as power tools, electric vehicle drive systems and robot control systems.
3. **Inverter and power conversion system**:
Due to its high current carrying capacity and low RDS(ON), STU06L01-VB is suitable for inverters and other power conversion modules, which can efficiently convert DC to AC, or regulate the flow of voltage and current. It can be widely used in solar inverters, power adapters and power electronic devices.
4. **Power Control and Load Switch**:
STU06L01-VB can provide precise switching control in various load switches and power control modules, especially for applications requiring fast response and low power consumption, such as communication equipment, smart home power management systems, etc.
5. **LED Driver**:
In LED driver power systems, STU06L01-VB is suitable for efficiently driving LED lighting systems and providing precise current control. The low on-resistance and high current carrying capacity of MOSFET make it play an important role in improving LED brightness and extending LED life.
6. **Smart Battery Charging System**:
The high current handling capability of STU06L01-VB makes it an ideal choice for smart battery charging systems, especially for charging modules of portable electronic products. During the battery charging process, MOSFET can effectively regulate the current flow, avoid overcharging, and protect the battery safety.
With its low on-resistance and high current carrying capability, STU06L01-VB excels in power-intensive applications and is particularly suitable for various power management, motor drive, inverter and LED drive fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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