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STT3PF20V-VB Product details
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**Product Introduction: STT3PF20V-VB**
STT3PF20V-VB is a single P-type MOSFET in SOT23-6 package, designed for low voltage, high-efficiency power management and switching applications. Its maximum drain-source voltage (VDS) is -30V, suitable for negative power supply voltage control systems, and can start working at a lower gate-source voltage. The gate-source threshold voltage (Vth) of this MOSFET is -1.7V, and it can start conducting at a lower voltage of VGS, and is compatible with low-voltage logic control signals. The on-resistance (RDS(ON)) of STT3PF20V-VB is 54mΩ at VGS=4.5V and 49mΩ at VGS=10V, with low conduction loss, which can improve power conversion efficiency. Its maximum drain current (ID) is -4.8A, suitable for switching control of medium power loads. Trench technology is used to optimize the on-resistance and thermal management performance, suitable for low-power power systems.
STT3PF20V-VB is a single P-type MOSFET in SOT23-6 package, designed for low voltage, high-efficiency power management and switching applications. Its maximum drain-source voltage (VDS) is -30V, suitable for negative power supply voltage control systems, and can start working at a lower gate-source voltage. The gate-source threshold voltage (Vth) of this MOSFET is -1.7V, and it can start conducting at a lower voltage of VGS, and is compatible with low-voltage logic control signals. The on-resistance (RDS(ON)) of STT3PF20V-VB is 54mΩ at VGS=4.5V and 49mΩ at VGS=10V, with low conduction loss, which can improve power conversion efficiency. Its maximum drain current (ID) is -4.8A, suitable for switching control of medium power loads. Trench technology is used to optimize the on-resistance and thermal management performance, suitable for low-power power systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | 49mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P |
**Detailed parameter description: **
- **Model**: STT3PF20V-VB
- **Package type**: SOT23-6
- **Configuration**: Single P-type MOSFET
- **Maximum drain-source voltage (VDS)**: -30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate-source threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- RDS(ON) @ VGS=4.5V: 54mΩ
- RDS(ON) @ VGS=10V: 49mΩ
- **Maximum leakage current (ID)**: -4.8A
- **Technology type**: Trench (deep trench technology)
- **Operating temperature range**: -55°C to +150°C
- **Application Type**: Load switch, power management, power conversion, low power switch, etc.
- **Model**: STT3PF20V-VB
- **Package type**: SOT23-6
- **Configuration**: Single P-type MOSFET
- **Maximum drain-source voltage (VDS)**: -30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate-source threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- RDS(ON) @ VGS=4.5V: 54mΩ
- RDS(ON) @ VGS=10V: 49mΩ
- **Maximum leakage current (ID)**: -4.8A
- **Technology type**: Trench (deep trench technology)
- **Operating temperature range**: -55°C to +150°C
- **Application Type**: Load switch, power management, power conversion, low power switch, etc.
Domain and module applications：
**Application fields and module examples:**
1. **Low-power power management**:
STT3PF20V-VB is suitable for low-power power management systems, especially in applications that require negative power supply voltage. Due to its low on-resistance (RDS(ON)=49mΩ @ VGS=10V), this MOSFET can reduce energy loss and improve the overall efficiency of the power system. It is very suitable for portable devices, battery-powered systems, low-power embedded devices, etc.
2. **Load switch control**:
STT3PF20V-VB can be used for load switch control, especially to control the direction of current flow in positive and negative power supply systems. Its small package (SOT23-6) enables it to provide efficient load switching functions in space-constrained designs. It is suitable for home appliances, industrial control equipment, power tools and other electronic products that require precise load control.
3. **Power conversion applications**:
Due to its low on-resistance, the STT3PF20V-VB is also very suitable for use as a switching element in DC-DC converters. By reducing switching losses, the STT3PF20V-VB can effectively improve power conversion efficiency and play an important role in power conversion applications such as battery chargers, LED drivers, and power adapters.
4. **Battery Management System (BMS)**:
In the battery management system, the STT3PF20V-VB, as a switching element in the negative power path, can efficiently manage the battery charging and discharging process. Its low on-resistance and high current carrying capacity make it suitable for battery protection circuits to ensure the safety and long-term stable operation of the system.
5. **Automotive electronics and mobile power**:
The STT3PF20V-VB can also be widely used in automotive electronics and mobile power modules, especially in power systems that require negative voltage power supply. It can control battery charging and discharging, drive load switches or protection circuits, help improve power efficiency and extend battery life.
1. **Low-power power management**:
STT3PF20V-VB is suitable for low-power power management systems, especially in applications that require negative power supply voltage. Due to its low on-resistance (RDS(ON)=49mΩ @ VGS=10V), this MOSFET can reduce energy loss and improve the overall efficiency of the power system. It is very suitable for portable devices, battery-powered systems, low-power embedded devices, etc.
2. **Load switch control**:
STT3PF20V-VB can be used for load switch control, especially to control the direction of current flow in positive and negative power supply systems. Its small package (SOT23-6) enables it to provide efficient load switching functions in space-constrained designs. It is suitable for home appliances, industrial control equipment, power tools and other electronic products that require precise load control.
3. **Power conversion applications**:
Due to its low on-resistance, the STT3PF20V-VB is also very suitable for use as a switching element in DC-DC converters. By reducing switching losses, the STT3PF20V-VB can effectively improve power conversion efficiency and play an important role in power conversion applications such as battery chargers, LED drivers, and power adapters.
4. **Battery Management System (BMS)**:
In the battery management system, the STT3PF20V-VB, as a switching element in the negative power path, can efficiently manage the battery charging and discharging process. Its low on-resistance and high current carrying capacity make it suitable for battery protection circuits to ensure the safety and long-term stable operation of the system.
5. **Automotive electronics and mobile power**:
The STT3PF20V-VB can also be widely used in automotive electronics and mobile power modules, especially in power systems that require negative voltage power supply. It can control battery charging and discharging, drive load switches or protection circuits, help improve power efficiency and extend battery life.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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