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STT3998N-VB Product details
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Product Introduction: STT3998N-VB
**Model**: STT3998N-VB
**Package type**: SOT23-6
**Configuration**: Dual-N+N-Channel
**Operating voltage (VDS)**: 20V
**Maximum gate-source voltage (VGS)**: ±12V
**Threshold voltage (Vth)**: 0.5V ~ 1.5V
**On-resistance (RDS(ON))**:
- 22mΩ @ VGS = 4.5V
- 28mΩ @ VGS = 2.5V
**Maximum leakage current (ID)**: 6A
**Technology type**: Trench technology
STT3998N-VB is a dual N-channel MOSFET in SOT23-6 package. Its maximum drain-source voltage (VDS) is 20V, which is suitable for low-voltage switching applications. This product uses Trench technology and has a low on-resistance (RDS(ON)), which can reach 22mΩ at VGS = 4.5V, suitable for applications with high current efficiency requirements. Its lower threshold voltage (Vth) ranges from 0.5V to 1.5V, which is suitable for low-voltage operating conditions and can provide efficient switching characteristics. This MOSFET supports a maximum leakage current of 6A and is suitable for a variety of low-voltage power supplies, load control and power management systems.
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**Model**: STT3998N-VB
**Package type**: SOT23-6
**Configuration**: Dual-N+N-Channel
**Operating voltage (VDS)**: 20V
**Maximum gate-source voltage (VGS)**: ±12V
**Threshold voltage (Vth)**: 0.5V ~ 1.5V
**On-resistance (RDS(ON))**:
- 22mΩ @ VGS = 4.5V
- 28mΩ @ VGS = 2.5V
**Maximum leakage current (ID)**: 6A
**Technology type**: Trench technology
STT3998N-VB is a dual N-channel MOSFET in SOT23-6 package. Its maximum drain-source voltage (VDS) is 20V, which is suitable for low-voltage switching applications. This product uses Trench technology and has a low on-resistance (RDS(ON)), which can reach 22mΩ at VGS = 4.5V, suitable for applications with high current efficiency requirements. Its lower threshold voltage (Vth) ranges from 0.5V to 1.5V, which is suitable for low-voltage operating conditions and can provide efficient switching characteristics. This MOSFET supports a maximum leakage current of 6A and is suitable for a variety of low-voltage power supplies, load control and power management systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | 28mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N |
Detailed parameter description:
1. **VDS (drain-source voltage)**: 20V
- The maximum drain-source voltage of STT3998N-VB is 20V, which means it is suitable for applications with an operating voltage of up to 20V and is widely used in low-voltage systems such as battery-powered devices, low-voltage power converters, etc.
2. **VGS (gate-source voltage)**: ±12V
- The maximum gate-source voltage of this MOSFET is ±12V, which is compatible with most logic level drive circuits and suitable for various low-voltage digital control systems.
3. **Vth (threshold voltage)**: 0.5V ~ 1.5V
- With a threshold voltage of 0.5V to 1.5V, STT3998N-VB can operate at a lower gate voltage, provide fast response and reduce conduction loss, and is especially suitable for low-voltage logic circuits.
4. **RDS(ON) (On-resistance)**:
- **22mΩ @ VGS = 4.5V**
- **28mΩ @ VGS = 2.5V**
- At a gate voltage of 4.5V, the on-resistance is 22mΩ, indicating that this MOSFET has very low conduction losses, which makes it very useful in efficient current control and power transmission.
5. **ID (Drain Current)**: 6A
- The maximum drain current of STT3998N-VB is 6A, which is suitable for applications requiring medium current transmission. It can work stably under a current load of 6A, and is suitable for applications such as battery management and load switching.
6. **Technology**: Trench technology
- The STT3998N-VB with Trench technology can provide higher switching efficiency and lower on-resistance, making this MOSFET perform well in low power and high-efficiency applications.
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1. **VDS (drain-source voltage)**: 20V
- The maximum drain-source voltage of STT3998N-VB is 20V, which means it is suitable for applications with an operating voltage of up to 20V and is widely used in low-voltage systems such as battery-powered devices, low-voltage power converters, etc.
2. **VGS (gate-source voltage)**: ±12V
- The maximum gate-source voltage of this MOSFET is ±12V, which is compatible with most logic level drive circuits and suitable for various low-voltage digital control systems.
3. **Vth (threshold voltage)**: 0.5V ~ 1.5V
- With a threshold voltage of 0.5V to 1.5V, STT3998N-VB can operate at a lower gate voltage, provide fast response and reduce conduction loss, and is especially suitable for low-voltage logic circuits.
4. **RDS(ON) (On-resistance)**:
- **22mΩ @ VGS = 4.5V**
- **28mΩ @ VGS = 2.5V**
- At a gate voltage of 4.5V, the on-resistance is 22mΩ, indicating that this MOSFET has very low conduction losses, which makes it very useful in efficient current control and power transmission.
5. **ID (Drain Current)**: 6A
- The maximum drain current of STT3998N-VB is 6A, which is suitable for applications requiring medium current transmission. It can work stably under a current load of 6A, and is suitable for applications such as battery management and load switching.
6. **Technology**: Trench technology
- The STT3998N-VB with Trench technology can provide higher switching efficiency and lower on-resistance, making this MOSFET perform well in low power and high-efficiency applications.
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Domain and module applications：
Applicable fields and module examples:
1. **Battery-powered system**:
STT3998N-VB is very suitable for battery-powered applications, especially in low-voltage environments, such as battery management systems (BMS). Its low on-resistance and low threshold voltage enable it to work stably at lower voltages and reduce battery loss, extending battery life.
2. **Low-voltage power converter**:
In DC-DC converters, STT3998N-VB can be used as an efficient switching element, especially for power conversion modules with low voltage input (such as 5V or 12V) and output. Its low on-resistance and efficient switching characteristics help improve conversion efficiency and reduce system power loss.
3. **Load switch**:
STT3998N-VB is suitable for load switch applications, which can effectively control the on and off of the load, especially for low-power devices such as LED lights, portable electronic devices, etc. The low RDS(ON) of MOSFET enables low power consumption and high efficiency when controlling load switches.
4. **Power management and power management systems**:
STT3998N-VB is widely used in various power management and power management systems, such as power switches, battery protection circuits, mobile device power supplies, etc. Its high switching speed and low conduction loss make it an ideal choice in power management modules, helping to optimize overall system efficiency.
5. **Automation equipment and sensor networks**:
In automation control and sensor networks, STT3998N-VB can be used as a power switch or load control element to help these devices operate efficiently at low voltages, especially in the Internet of Things (IoT) and smart sensor devices. This MOSFET can effectively reduce system power consumption and extend the working time of the equipment.
6. **LED driver power supply**:
STT3998N-VB is suitable for LED driver power supply systems, especially in efficient LED lighting equipment. The low on-resistance and high switching efficiency of the MOSFET ensure the stability and efficiency of the LED driver, reduce heat generation and improve the performance of the lighting system.
Through its low voltage and high efficiency switching characteristics, the STT3998N-VB provides an ideal solution in a variety of low power applications, especially for battery-driven systems, low voltage power conversion, power management and current control of smart devices.
1. **Battery-powered system**:
STT3998N-VB is very suitable for battery-powered applications, especially in low-voltage environments, such as battery management systems (BMS). Its low on-resistance and low threshold voltage enable it to work stably at lower voltages and reduce battery loss, extending battery life.
2. **Low-voltage power converter**:
In DC-DC converters, STT3998N-VB can be used as an efficient switching element, especially for power conversion modules with low voltage input (such as 5V or 12V) and output. Its low on-resistance and efficient switching characteristics help improve conversion efficiency and reduce system power loss.
3. **Load switch**:
STT3998N-VB is suitable for load switch applications, which can effectively control the on and off of the load, especially for low-power devices such as LED lights, portable electronic devices, etc. The low RDS(ON) of MOSFET enables low power consumption and high efficiency when controlling load switches.
4. **Power management and power management systems**:
STT3998N-VB is widely used in various power management and power management systems, such as power switches, battery protection circuits, mobile device power supplies, etc. Its high switching speed and low conduction loss make it an ideal choice in power management modules, helping to optimize overall system efficiency.
5. **Automation equipment and sensor networks**:
In automation control and sensor networks, STT3998N-VB can be used as a power switch or load control element to help these devices operate efficiently at low voltages, especially in the Internet of Things (IoT) and smart sensor devices. This MOSFET can effectively reduce system power consumption and extend the working time of the equipment.
6. **LED driver power supply**:
STT3998N-VB is suitable for LED driver power supply systems, especially in efficient LED lighting equipment. The low on-resistance and high switching efficiency of the MOSFET ensure the stability and efficiency of the LED driver, reduce heat generation and improve the performance of the lighting system.
Through its low voltage and high efficiency switching characteristics, the STT3998N-VB provides an ideal solution in a variety of low power applications, especially for battery-driven systems, low voltage power conversion, power management and current control of smart devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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