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STT3962NE-VB Product details
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1. **STT3962NE-VB Product Introduction**
**STT3962NE-VB** is a **dual N-type MOSFET** in **SOT23-6 package**, with **60V drain-source voltage (VDS)** and **4.2A maximum drain current (ID)**. The device adopts **Trench technology** to optimize the on-resistance and switching performance, ensuring low power loss and high efficiency. Its **gate-source voltage (VGS)** supports **±20V**, adapting to a wide range of driving voltages, and **threshold voltage (Vth)** is **1.7V**, suitable for low-voltage driving applications. The MOSFET's low on-resistance (RDS(ON)) of 60mΩ (VGS=4.5V) and 48mΩ (VGS=10V) provides high efficiency at medium current loads and is suitable for a variety of power conversion and switching applications such as power management, battery drives, and small power tools.
**STT3962NE-VB** is a **dual N-type MOSFET** in **SOT23-6 package**, with **60V drain-source voltage (VDS)** and **4.2A maximum drain current (ID)**. The device adopts **Trench technology** to optimize the on-resistance and switching performance, ensuring low power loss and high efficiency. Its **gate-source voltage (VGS)** supports **±20V**, adapting to a wide range of driving voltages, and **threshold voltage (Vth)** is **1.7V**, suitable for low-voltage driving applications. The MOSFET's low on-resistance (RDS(ON)) of 60mΩ (VGS=4.5V) and 48mΩ (VGS=10V) provides high efficiency at medium current loads and is suitable for a variety of power conversion and switching applications such as power management, battery drives, and small power tools.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 60V | 1.7V | 4.2A | 48mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 60V | 1.7V | 4.2A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 60V | 1.7V | 4.2A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N |
2. **Detailed parameter description**
- **Model**: STT3962NE-VB
- **Package type**: **SOT23-6** — Small package, suitable for high-density circuit board design, especially for applications with limited space.
- **Configuration**: **Dual-N+N-Channel** — Dual N-type MOSFET, suitable for symmetrical or complementary switch control in a variety of circuits.
- **Drain-source voltage (VDS)**: **60V** — The maximum drain-source voltage that can be tolerated is 60V, suitable for low to medium voltage applications.
- **Gate-source voltage (VGS)**: **±20V** — The maximum supported gate voltage is ±20V, adapting to different driving voltage requirements.
- **Threshold voltage (Vth)**: **1.7V** — The MOSFET starts to conduct when the gate-source voltage reaches 1.7V, suitable for low-voltage driving circuits.
- **On-resistance (RDS(ON))**:
- **60mΩ @ VGS=4.5V** — Lower on-resistance at lower gate voltage, suitable for low current applications.
- **48mΩ @ VGS=10V** — Lower on-resistance at higher gate voltage, reducing energy loss.
- **Maximum drain current (ID)**: **4.2A** — Suitable for medium current load, providing stable current output.
- **Technology type**: **Trench technology** — Optimizes conduction performance and switching characteristics, reduces switching losses, and is suitable for high-efficiency power supply applications.
- **Model**: STT3962NE-VB
- **Package type**: **SOT23-6** — Small package, suitable for high-density circuit board design, especially for applications with limited space.
- **Configuration**: **Dual-N+N-Channel** — Dual N-type MOSFET, suitable for symmetrical or complementary switch control in a variety of circuits.
- **Drain-source voltage (VDS)**: **60V** — The maximum drain-source voltage that can be tolerated is 60V, suitable for low to medium voltage applications.
- **Gate-source voltage (VGS)**: **±20V** — The maximum supported gate voltage is ±20V, adapting to different driving voltage requirements.
- **Threshold voltage (Vth)**: **1.7V** — The MOSFET starts to conduct when the gate-source voltage reaches 1.7V, suitable for low-voltage driving circuits.
- **On-resistance (RDS(ON))**:
- **60mΩ @ VGS=4.5V** — Lower on-resistance at lower gate voltage, suitable for low current applications.
- **48mΩ @ VGS=10V** — Lower on-resistance at higher gate voltage, reducing energy loss.
- **Maximum drain current (ID)**: **4.2A** — Suitable for medium current load, providing stable current output.
- **Technology type**: **Trench technology** — Optimizes conduction performance and switching characteristics, reduces switching losses, and is suitable for high-efficiency power supply applications.
Domain and module applications：
3. **Application fields and modules**
**STT3962NE-VB** has the characteristics of low on-resistance, efficient switching and medium current capacity, making it suitable for many fields, especially in medium voltage applications requiring high efficiency and low power consumption. The following are typical application fields of this MOSFET:
# a) **Power management and DC-DC converters**
This MOSFET is suitable for **switching power supplies**, especially in **DC-DC converters**, which can provide efficient power conversion and stable current control. It is very suitable for **low to medium voltage** power supply applications, supporting voltage level conversion such as **12V/24V**, and reducing losses by reducing on-resistance, providing more efficient energy conversion.
# b) **Battery Management System (BMS)**
**STT3962NE-VB** is suitable for **Battery Management System (BMS)**, especially in **Li-ion battery management** and **Charging control** applications. It can efficiently control the charging and discharging process of the battery at medium voltage (such as 5V to 24V battery system). Low on-resistance helps reduce power losses and improve overall energy efficiency.
# c) **Portable Power Tools**
The **STT3962NE-VB** is an ideal choice for applications that require high efficiency and have space constraints, such as **power tools**. The low on-resistance and moderate maximum drain current of this MOSFET enable efficient switching performance in **battery-powered power tools**, extending battery life and reducing device size.
# d) **Consumer Electronics**
This MOSFET is suitable for a variety of **consumer electronic products**, especially power management modules for devices such as **smartphones, laptops, tablets** and **LED driver circuits**. Its small **SOT23-6 package** is ideal for use on space-constrained circuit boards while providing high efficiency and reliability.
# e) **LED drive circuit**
In **LED drive circuit**, **STT3962NE-VB** can effectively drive and regulate the current of LED through its low on-resistance and high switching efficiency, ensuring stable brightness and efficient power management. This makes it very practical in **lighting equipment** and **backlight** applications.
# f) **Low power applications and power factor correction**
**STT3962NE-VB** is also very suitable for **low power applications** and **power factor correction** (PFC) circuits. It can provide efficient switching performance in **power electronic equipment**, especially in converters and power factor correctors, reducing power losses and improving the energy efficiency of the overall system.
# g) **Automotive electronics and electric vehicles**
**STT3962NE-VB** is also widely used in **battery management**, **drive circuit** and **power control module** of **automotive electronics** or **electric vehicles (EV)**. This MOSFET can withstand high voltage and has efficient switching characteristics to ensure efficient battery charging and discharging and power management, suitable for automotive power systems.
Summary
**STT3962NE-VB** is a **dual N-type MOSFET** with **60V drain-source voltage** and **4.2A maximum drain current**. It adopts **Trench technology** to provide low on-resistance and efficient switching characteristics. This MOSFET is suitable for a variety of low to medium voltage power applications, such as **DC-DC converters, battery management systems, consumer electronics, LED drivers, automotive electronics** and other fields. Its small **SOT23-6 package** makes it ideal for space-constrained circuits while providing high efficiency and reliable performance to meet the energy efficiency and reliability needs of modern electronic devices.
**STT3962NE-VB** has the characteristics of low on-resistance, efficient switching and medium current capacity, making it suitable for many fields, especially in medium voltage applications requiring high efficiency and low power consumption. The following are typical application fields of this MOSFET:
# a) **Power management and DC-DC converters**
This MOSFET is suitable for **switching power supplies**, especially in **DC-DC converters**, which can provide efficient power conversion and stable current control. It is very suitable for **low to medium voltage** power supply applications, supporting voltage level conversion such as **12V/24V**, and reducing losses by reducing on-resistance, providing more efficient energy conversion.
# b) **Battery Management System (BMS)**
**STT3962NE-VB** is suitable for **Battery Management System (BMS)**, especially in **Li-ion battery management** and **Charging control** applications. It can efficiently control the charging and discharging process of the battery at medium voltage (such as 5V to 24V battery system). Low on-resistance helps reduce power losses and improve overall energy efficiency.
# c) **Portable Power Tools**
The **STT3962NE-VB** is an ideal choice for applications that require high efficiency and have space constraints, such as **power tools**. The low on-resistance and moderate maximum drain current of this MOSFET enable efficient switching performance in **battery-powered power tools**, extending battery life and reducing device size.
# d) **Consumer Electronics**
This MOSFET is suitable for a variety of **consumer electronic products**, especially power management modules for devices such as **smartphones, laptops, tablets** and **LED driver circuits**. Its small **SOT23-6 package** is ideal for use on space-constrained circuit boards while providing high efficiency and reliability.
# e) **LED drive circuit**
In **LED drive circuit**, **STT3962NE-VB** can effectively drive and regulate the current of LED through its low on-resistance and high switching efficiency, ensuring stable brightness and efficient power management. This makes it very practical in **lighting equipment** and **backlight** applications.
# f) **Low power applications and power factor correction**
**STT3962NE-VB** is also very suitable for **low power applications** and **power factor correction** (PFC) circuits. It can provide efficient switching performance in **power electronic equipment**, especially in converters and power factor correctors, reducing power losses and improving the energy efficiency of the overall system.
# g) **Automotive electronics and electric vehicles**
**STT3962NE-VB** is also widely used in **battery management**, **drive circuit** and **power control module** of **automotive electronics** or **electric vehicles (EV)**. This MOSFET can withstand high voltage and has efficient switching characteristics to ensure efficient battery charging and discharging and power management, suitable for automotive power systems.
Summary
**STT3962NE-VB** is a **dual N-type MOSFET** with **60V drain-source voltage** and **4.2A maximum drain current**. It adopts **Trench technology** to provide low on-resistance and efficient switching characteristics. This MOSFET is suitable for a variety of low to medium voltage power applications, such as **DC-DC converters, battery management systems, consumer electronics, LED drivers, automotive electronics** and other fields. Its small **SOT23-6 package** makes it ideal for space-constrained circuits while providing high efficiency and reliable performance to meet the energy efficiency and reliability needs of modern electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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